Alpha & Omega Semiconductor Inc. AOTF10N60L_002
- Part Number:
- AOTF10N60L_002
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Ventron No:
- 3586841-AOTF10N60L_002
- Description:
- MOSFET N-CH 600V 10A TO220F
- Datasheet:
- AOTF10N60L_002
Alpha & Omega Semiconductor Inc. AOTF10N60L_002 technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AOTF10N60L_002.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Supplier Device PackageTO-220-3F
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2011
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max50W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs750mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1600pF @ 25V
- Current - Continuous Drain (Id) @ 25°C10A Tc
- Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Continuous Drain Current (ID)10A
- Input Capacitance1.6nF
- Rds On Max750 mΩ
- RoHS StatusRoHS Compliant
AOTF10N60L_002 Overview
The maximum input capacitance of this device is 1600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 10A.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
AOTF10N60L_002 Features
a continuous drain current (ID) of 10A
a 600V drain to source voltage (Vdss)
AOTF10N60L_002 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AOTF10N60L_002 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 1600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 10A.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
AOTF10N60L_002 Features
a continuous drain current (ID) of 10A
a 600V drain to source voltage (Vdss)
AOTF10N60L_002 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AOTF10N60L_002 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
AOTF10N60L_002 More Descriptions
MOSFET N-CH 600V 10A TO220F
The three parts on the right have similar specifications to AOTF10N60L_002.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Input CapacitanceRds On MaxRoHS StatusSubcategoryConfigurationOperating ModeView Compare
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AOTF10N60L_002Through HoleThrough HoleTO-220-3 Full PackTO-220-3F-55°C~150°C TJTube2011Obsolete1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)50W TcN-Channel750mOhm @ 5A, 10V4.5V @ 250μA1600pF @ 25V10A Tc40nC @ 10V600V10V±30V10A1.6nF750 mΩRoHS Compliant----
-
-Through HoleTO-220-3 Full Pack--55°C~150°C TJTube-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)50W TcN-Channel400m Ω @ 5.5A, 10V5V @ 250μA2333pF @ 100V11A Tc50nC @ 10V600V10V±30V-------
-
-Through HoleTO-220-3 Full Pack--55°C~150°C TJTube-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)50W TcN-Channel250m Ω @ 10A, 10V5V @ 250μA3607pF @ 100V20A Tc80nC @ 10V600V10V±30V-------
-
Through HoleThrough HoleTO-220-3 Full Pack--55°C~150°C TJTube2011Obsolete1 (Unlimited)--MOSFET (Metal Oxide)43W TcN-Channel700m Ω @ 5A, 10V5V @ 250μA1346pF @ 100V10A Tc35nC @ 10V600V10V±30V10A--RoHS CompliantFET General Purpose PowerSingleENHANCEMENT MODE
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