Alpha & Omega Semiconductor Inc. AOD4130
- Part Number:
- AOD4130
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Ventron No:
- 2478118-AOD4130
- Description:
- MOSFET N-CH 60V 30A TO252
- Datasheet:
- AOD4130
Alpha & Omega Semiconductor Inc. AOD4130 technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AOD4130.
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Published2011
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- ConfigurationSingle
- Power Dissipation-Max2.5W Ta 52W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation52W
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs24m Ω @ 20A, 10V
- Vgs(th) (Max) @ Id2.8V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1900pF @ 30V
- Current - Continuous Drain (Id) @ 25°C6.5A Ta 30A Tc
- Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)30A
- Gate to Source Voltage (Vgs)20V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
AOD4130 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1900pF @ 30V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 30A. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
AOD4130 Features
a continuous drain current (ID) of 30A
a 60V drain to source voltage (Vdss)
AOD4130 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AOD4130 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1900pF @ 30V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 30A. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
AOD4130 Features
a continuous drain current (ID) of 30A
a 60V drain to source voltage (Vdss)
AOD4130 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AOD4130 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
AOD4130 More Descriptions
Trans MOSFET N-CH 60V 30A 3-Pin(2 Tab) DPAK T/R
60V N-Channel MOSFET, TO-252-3, RoHSAlpha & Omega Semiconductor SCT
MOSFET N-CH 60V 6.5A/30A TO252
60V N-Channel MOSFET, TO-252-3, RoHSAlpha & Omega Semiconductor SCT
MOSFET N-CH 60V 6.5A/30A TO252
The three parts on the right have similar specifications to AOD4130.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)SubcategoryTechnologyNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)Radiation HardeningRoHS StatusSupplier Device PackageSeriesMax Operating TemperatureMin Operating TemperatureInput CapacitanceRds On MaxView Compare
-
AOD413018 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633-55°C~175°C TJTape & Reel (TR)2011Active1 (Unlimited)FET General Purpose PowerMOSFET (Metal Oxide)1Single2.5W Ta 52W TcENHANCEMENT MODE52WN-Channel24m Ω @ 20A, 10V2.8V @ 250μA1900pF @ 30V6.5A Ta 30A Tc34nC @ 10V60V4.5V 10V±20V30A20VNoROHS3 Compliant-------
-
-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJBulk2011Obsolete1 (Unlimited)-MOSFET (Metal Oxide)--2.3W Ta 50W Tc--N-Channel8mOhm @ 20A, 10V2.4V @ 250μA1430pF @ 15V13A Ta 55A Tc28nC @ 10V30V4.5V 10V±20V55A--RoHS CompliantTO-252, (D-Pak)SDMOS™175°C-55°C1.43nF8 mΩ
-
-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTape & Reel (TR)2010Obsolete1 (Unlimited)-MOSFET (Metal Oxide)1-3.1W Ta 150W Tc-150WN-Channel14m Ω @ 20A, 10V4V @ 250μA2410pF @ 40V10A Ta 54A Tc38nC @ 10V80V7V 10V±25V13.5A25V-RoHS Compliant-SDMOS™----
-
-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTape & Reel (TR)2008Obsolete1 (Unlimited)-MOSFET (Metal Oxide)--2W Ta 50W Tc--N-Channel9.8m Ω @ 20A, 10V3V @ 250μA1920pF @ 20V50A Tc22nC @ 10V40V4.5V 10V±20V50A--RoHS Compliant------
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