Alpha & Omega Semiconductor Inc. AO4486
- Part Number:
- AO4486
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Ventron No:
- 2481717-AO4486
- Description:
- MOSFET N-CH 100V 4.2A 8SOIC
- Datasheet:
- AO4486
Alpha & Omega Semiconductor Inc. AO4486 technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AO4486.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2010
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- ConfigurationSingle
- Power Dissipation-Max3.1W Ta
- Operating ModeENHANCEMENT MODE
- Power Dissipation3.1W
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs79m Ω @ 3A, 10V
- Vgs(th) (Max) @ Id2.7V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds942pF @ 50V
- Current - Continuous Drain (Id) @ 25°C4.2A Ta
- Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)4.2A
- Gate to Source Voltage (Vgs)20V
- RoHS StatusROHS3 Compliant
AO4486 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 942pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 4.2A. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
AO4486 Features
a continuous drain current (ID) of 4.2A
a 100V drain to source voltage (Vdss)
AO4486 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AO4486 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 942pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 4.2A. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
AO4486 Features
a continuous drain current (ID) of 4.2A
a 100V drain to source voltage (Vdss)
AO4486 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AO4486 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
AO4486 More Descriptions
Trans MOSFET N-CH 100V 4.2A 8-Pin SOIC T/R
MOSFET N-CH 100V 4.2A 8SOIC
100V N-Channel MOSFET, SO-8, RoHSAlpha & Omega Semiconductor SCT
OEMs, CMs ONLY (NO BROKERS)
MOSFET N-CH 100V 4.2A 8SOIC
100V N-Channel MOSFET, SO-8, RoHSAlpha & Omega Semiconductor SCT
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to AO4486.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)SubcategoryTechnologyNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)RoHS StatusVgs(th) (Max) @ Id:Vgs (Max):Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drive Voltage (Max Rds On, Min Rds On):Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:Reach Compliance CodeView Compare
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AO448616 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-55°C~150°C TJTape & Reel (TR)2010Not For New Designs1 (Unlimited)FET General Purpose PowerMOSFET (Metal Oxide)1Single3.1W TaENHANCEMENT MODE3.1WN-Channel79m Ω @ 3A, 10V2.7V @ 250μA942pF @ 50V4.2A Ta20nC @ 10V100V4.5V 10V±20V4.2A20VROHS3 Compliant--------------------
-
-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)2002Obsolete1 (Unlimited)-MOSFET (Metal Oxide)--3.1W Ta--N-Channel30m Ω @ 7A, 10V3V @ 250μA516pF @ 20V7A Ta13nC @ 10V40V4.5V 10V±20V7A-RoHS Compliant-------------------
-
-----------------------------3V @ 250µA±20VMOSFET (Metal Oxide)8-SO-22 mOhm @ 8.2A, 10V3.1W (Ta)Tape & Reel (TR)8-SOIC (0.154", 3.90mm Width)-55°C ~ 150°C (TJ)Surface Mount2300pF @ 30V30nC @ 4.5VN-Channel-4.5V, 10V60V8.2A (Ta)-
-
--Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)-MOSFET (Metal Oxide)--3.1W Ta--N-Channel130m Ω @ 3.1A, 10V3V @ 250μA350pF @ 37.5V3.1A Ta3.5nC @ 4.5V75V4.5V 10V±25V---------------------compliant
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