Alpha & Omega Semiconductor Inc. AO4459
- Part Number:
- AO4459
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Ventron No:
- 4538897-AO4459
- Description:
- MOSFET P-CH 30V 6.5A 8SOIC
- Datasheet:
- AO4459
Alpha & Omega Semiconductor Inc. AO4459 technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AO4459.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max3.1W Ta
- Power Dissipation3.1W
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs46m Ω @ 6.5A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds830pF @ 15V
- Current - Continuous Drain (Id) @ 25°C6.5A Ta
- Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)6.5A
- Gate to Source Voltage (Vgs)20V
- RoHS StatusROHS3 Compliant
AO4459 Overview
A device's maximum input capacitance is 830pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 6.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
AO4459 Features
a continuous drain current (ID) of 6.5A
a 30V drain to source voltage (Vdss)
AO4459 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AO4459 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 830pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 6.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
AO4459 Features
a continuous drain current (ID) of 6.5A
a 30V drain to source voltage (Vdss)
AO4459 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AO4459 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
AO4459 More Descriptions
Trans MOSFET P-CH 30V 6.5A 8-Pin SOIC
30V P-Channel MOSFET, SO-8, RoHSAlpha & Omega Semiconductor SCT
French Electronic Distributor since 1988
30V P-Channel MOSFET, SO-8, RoHSAlpha & Omega Semiconductor SCT
French Electronic Distributor since 1988
The three parts on the right have similar specifications to AO4459.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyNumber of ElementsPower Dissipation-MaxPower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)RoHS StatusFactory Lead TimeTransistor Element MaterialSeriesNumber of TerminationsECCN CodeTerminal PositionTerminal FormPin CountJESD-30 CodeQualification StatusConfigurationOperating ModeTransistor ApplicationDrain-source On Resistance-MaxDS Breakdown Voltage-MinFeedback Cap-Max (Crss)SubcategoryDrain Current-Max (Abs) (ID)View Compare
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AO4459Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-55°C~150°C TJTape & Reel (TR)2011Not For New Designs1 (Unlimited)MOSFET (Metal Oxide)13.1W Ta3.1WP-Channel46m Ω @ 6.5A, 10V2.5V @ 250μA830pF @ 15V6.5A Ta16nC @ 10V30V4.5V 10V±20V6.5A20VROHS3 Compliant-------------------
-
Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-55°C~150°C TJTape & Reel (TR)2011Obsolete1 (Unlimited)MOSFET (Metal Oxide)13.1W Ta3.1WN-Channel130m Ω @ 3.1A, 10V3V @ 250μA350pF @ 37.5V3.1A Ta6.5nC @ 10V75V4.5V 10V±25V3.1A25VRoHS Compliant16 Weeks-----------------
-
Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)2010Obsolete1 (Unlimited)MOSFET (Metal Oxide)13.1W Ta-N-Channel36m Ω @ 6.5A, 10V4V @ 250μA1450pF @ 50V6.5A Ta23nC @ 10V100V7V 10V±25V6.5A-RoHS Compliant-SILICONSDMOS™8EAR99DUALGULL WING8R-PDSO-G8Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING0.036Ohm100V50 pF--
-
Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-55°C~150°C TJTape & Reel (TR)2011Not For New Designs1 (Unlimited)MOSFET (Metal Oxide)13.1W Ta-P-Channel34m Ω @ 7A, 10V2.4V @ 250μA910pF @ 15V7A Ta16nC @ 10V30V4.5V 10V±20V7A-ROHS3 Compliant16 WeeksSILICON-8EAR99DUALGULL WING8-Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING0.034Ohm30V135 pFOther Transistors7A
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