Alpha & Omega Semiconductor Inc. AO4419
- Part Number:
- AO4419
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Ventron No:
- 2483439-AO4419
- Description:
- MOSFET P-CH 30V 9.7A 8SOIC
- Datasheet:
- AO4419
Alpha & Omega Semiconductor Inc. AO4419 technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AO4419.
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max3.1W Ta
- Power Dissipation3.1W
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs20m Ω @ 9.7A, 10V
- Vgs(th) (Max) @ Id2.7V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1900pF @ 15V
- Current - Continuous Drain (Id) @ 25°C9.7A Ta
- Gate Charge (Qg) (Max) @ Vgs32nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)9.7A
- Gate to Source Voltage (Vgs)20V
- RoHS StatusROHS3 Compliant
AO4419 Overview
A device's maximal input capacitance is 1900pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 9.7A, which represents the maximum continuous current it can conduct.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
AO4419 Features
a continuous drain current (ID) of 9.7A
a 30V drain to source voltage (Vdss)
AO4419 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AO4419 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 1900pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 9.7A, which represents the maximum continuous current it can conduct.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
AO4419 Features
a continuous drain current (ID) of 9.7A
a 30V drain to source voltage (Vdss)
AO4419 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AO4419 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
AO4419 More Descriptions
Trans MOSFET P-CH 30V 9.7A 8-Pin SOIC / MOSFET P-CH 30V 9.7A 8SOIC
Small Signal Field-Effect Transistor, 15A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
30V 9.7A 3.1W 20mΩ@10V,9.7A P Channel SOP-8 MOSFETs ROHS
30V P-Channel MOSFET, SO-8, RoHSAlpha & Omega Semiconductor SCT
Small Signal Field-Effect Transistor, 15A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
30V 9.7A 3.1W 20mΩ@10V,9.7A P Channel SOP-8 MOSFETs ROHS
30V P-Channel MOSFET, SO-8, RoHSAlpha & Omega Semiconductor SCT
The three parts on the right have similar specifications to AO4419.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyNumber of ElementsPower Dissipation-MaxPower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)RoHS StatusReach Compliance CodeView Compare
-
AO441918 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-55°C~150°C TJTape & Reel (TR)2011Active1 (Unlimited)MOSFET (Metal Oxide)13.1W Ta3.1WP-Channel20m Ω @ 9.7A, 10V2.7V @ 250μA1900pF @ 15V9.7A Ta32nC @ 10V30V4.5V 10V±20V9.7A20VROHS3 Compliant--
-
--Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)MOSFET (Metal Oxide)-2.5W Ta-N-Channel55m Ω @ 5A, 10V3V @ 250μA540pF @ 30V5A Ta5.5nC @ 4.5V60V4.5V 10V±20V----
-
------Tape & Reel (TR)2010Obsolete1 (Unlimited)----------------compliant
-
------Tape & Reel (TR)2016Obsolete1 (Unlimited)-----------------
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