Alpha & Omega Semiconductor Inc. AO4407A
- Part Number:
- AO4407A
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Ventron No:
- 2478065-AO4407A
- Description:
- MOSFET P-CH 30V 12A 8SOIC
- Datasheet:
- AO4407A
Alpha & Omega Semiconductor Inc. AO4407A technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AO4407A.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2013
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Pin Count8
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max3.1W Ta
- Operating ModeENHANCEMENT MODE
- Power Dissipation3.1W
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs11m Ω @ 12A, 20V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2600pF @ 15V
- Current - Continuous Drain (Id) @ 25°C12A Ta
- Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)6V 20V
- Vgs (Max)±25V
- Continuous Drain Current (ID)12A
- Gate to Source Voltage (Vgs)25V
- DS Breakdown Voltage-Min30V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
AO4407A Overview
The maximum input capacitance of this device is 2600pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 12A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 30V.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (6V 20V), this device helps reduce its power consumption.
AO4407A Features
a continuous drain current (ID) of 12A
a 30V drain to source voltage (Vdss)
AO4407A Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AO4407A applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 2600pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 12A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 30V.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (6V 20V), this device helps reduce its power consumption.
AO4407A Features
a continuous drain current (ID) of 12A
a 30V drain to source voltage (Vdss)
AO4407A Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AO4407A applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
AO4407A More Descriptions
MOSFET P-CH 30V 12A 8SOIC / Trans MOSFET P-CH 30V 12A 8-Pin SOIC
30V 12A 3.1W 11m¦¸@20V,12A 3V@250¦ÌA P Channel SOIC-8_150mil MOSFETs ROHS
Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
30V P-Channel MOSFET, SO-8, RoHSAlpha & Omega Semiconductor SCT
IC 12-BIT ASYNC BIN CNTR16-TSSOP
SMD TRANS.FDS6675 PMOS 30V 11A SO8 LF
30V 12A 3.1W 11m¦¸@20V,12A 3V@250¦ÌA P Channel SOIC-8_150mil MOSFETs ROHS
Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
30V P-Channel MOSFET, SO-8, RoHSAlpha & Omega Semiconductor SCT
IC 12-BIT ASYNC BIN CNTR16-TSSOP
SMD TRANS.FDS6675 PMOS 30V 11A SO8 LF
The three parts on the right have similar specifications to AO4407A.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryTechnologyTerminal PositionTerminal FormPin CountNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)DS Breakdown Voltage-MinRadiation HardeningRoHS StatusLead FreeVgs(th) (Max) @ Id:Vgs (Max):Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drive Voltage (Max Rds On, Min Rds On):Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:Reach Compliance CodeView Compare
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AO4407ASurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8SILICON-55°C~150°C TJTape & Reel (TR)2013Not For New Designs1 (Unlimited)8EAR99Other TransistorsMOSFET (Metal Oxide)DUALGULL WING81SINGLE WITH BUILT-IN DIODE3.1W TaENHANCEMENT MODE3.1WP-ChannelSWITCHING11m Ω @ 12A, 20V3V @ 250μA2600pF @ 15V12A Ta39nC @ 10V30V6V 20V±25V12A25V30VNoROHS3 CompliantLead Free--------------------
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--------------------------------------3V @ 250µA±20VMOSFET (Metal Oxide)8-SO-22 mOhm @ 8.2A, 10V3.1W (Ta)Tape & Reel (TR)8-SOIC (0.154", 3.90mm Width)-55°C ~ 150°C (TJ)Surface Mount2300pF @ 30V30nC @ 4.5VN-Channel-4.5V, 10V60V8.2A (Ta)-
-
-Surface Mount8-SOIC (0.154, 3.90mm Width)---55°C~150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-----2.5W Ta--N-Channel-55m Ω @ 5A, 10V3V @ 250μA540pF @ 30V5A Ta5.5nC @ 4.5V60V4.5V 10V±20V-------------------------
-
-Surface Mount8-SOIC (0.154, 3.90mm Width)---55°C~150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-----3.1W Ta--N-Channel-130m Ω @ 3.1A, 10V3V @ 250μA350pF @ 37.5V3.1A Ta3.5nC @ 4.5V75V4.5V 10V±25V------------------------compliant
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