NXP USA Inc. AFT26H250W03SR6
- Part Number:
- AFT26H250W03SR6
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2477372-AFT26H250W03SR6
- Description:
- FET RF 2CH 65V 2.5GHZ NI1230S-4
- ECAD Model:
-
- Datasheet:
- AFT26H250xxzSR6
NXP USA Inc. AFT26H250W03SR6 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. AFT26H250W03SR6.
- Factory Lead Time10 Weeks
- Package / CaseNI-1230-4S
- PackagingTape & Reel (TR)
- Published2006
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- ECCN CodeEAR99
- Voltage - Rated65V
- HTS Code8541.29.00.40
- Frequency2.5GHz
- Current - Test700mA
- Transistor TypeLDMOS
- Gain14.1dB
- Power - Output50W
- Voltage - Test28V
- RoHS StatusROHS3 Compliant
AFT26H250W03SR6 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet AFT26H250W03SR6 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of AFT26H250W03SR6. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet AFT26H250W03SR6 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of AFT26H250W03SR6. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
AFT26H250W03SR6 More Descriptions
Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 50 W Avg., 28 V
RF Mosfet LDMOS (Dual) 28 V 700 mA 2.496GHz ~ 2.69GHz 14.1dB 50W NI-1230-4S
RF Power Transistor,2496 to 2690 MHz, 230 W, Typ Gain in dB is 14.1 @ 2496 MHz, 28 V, LDMOS, SOT1829
Trans MOSFET N-CH 65V 0.7A 5-Pin NI-1230S T/R
RF MOSFET Transistors Airfast RF Pwr LDMOS Trx, 2.49-.69GHz
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
RF POWER FIELD EFFECT TRANSISTOR
FET RF NCH 65V 2690MHZ NI12304S
FET RF 2CH 65V 2.5GHZ NI1230S-4
RF Mosfet LDMOS (Dual) 28 V 700 mA 2.496GHz ~ 2.69GHz 14.1dB 50W NI-1230-4S
RF Power Transistor,2496 to 2690 MHz, 230 W, Typ Gain in dB is 14.1 @ 2496 MHz, 28 V, LDMOS, SOT1829
Trans MOSFET N-CH 65V 0.7A 5-Pin NI-1230S T/R
RF MOSFET Transistors Airfast RF Pwr LDMOS Trx, 2.49-.69GHz
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
RF POWER FIELD EFFECT TRANSISTOR
FET RF NCH 65V 2690MHZ NI12304S
FET RF 2CH 65V 2.5GHZ NI1230S-4
The three parts on the right have similar specifications to AFT26H250W03SR6.
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ImagePart NumberManufacturerFactory Lead TimePackage / CasePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeVoltage - RatedHTS CodeFrequencyCurrent - TestTransistor TypeGainPower - OutputVoltage - TestRoHS StatusSubcategoryPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Operating Temperature (Max)ConfigurationPolarity/Channel TypeFET TechnologyView Compare
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AFT26H250W03SR610 WeeksNI-1230-4STape & Reel (TR)2006Obsolete3 (168 Hours)EAR9965V8541.29.00.402.5GHz700mALDMOS14.1dB50W28VROHS3 Compliant-------- -
10 WeeksNI-780STape & Reel (TR)2013Not For New DesignsNot ApplicableEAR9965V8541.29.00.402.4GHz1.1ALDMOS17.9dB45W28VROHS3 CompliantFET General Purpose Power26040125°CSingleN-CHANNELMETAL-OXIDE SEMICONDUCTOR
-
10 WeeksNI-1230-4LS2LTape & Reel (TR)2006ActiveNot ApplicableEAR9965V8541.29.00.402.5GHz700mALDMOS14.1dB50W28VROHS3 CompliantFET General Purpose Power26040225°CSingleN-CHANNELMETAL-OXIDE SEMICONDUCTOR
-
10 WeeksNI-1230STape & Reel (TR)2006Not For New DesignsNot ApplicableEAR9965V8541.29.00.402.11GHz750mALDMOS16.4dB63W28VROHS3 CompliantFET General Purpose Power26040125°CSingleN-CHANNELMETAL-OXIDE SEMICONDUCTOR
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