NXP USA Inc. AFT21S232SR5

Name: AFT21S232SR5
Brand: NXP USA Inc.
SKU: 2477314-AFT21S232SR5
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: AFT21S232SR5

Manufacturer:: NXP USA Inc.

Ventron No:: 2477314-AFT21S232SR5

Description:: FET RF 65V 2.11GHZ NI780S-2

ECAD Model:

Datasheet:: AFT21S232SR5

Specifications

NXP USA Inc. AFT21S232SR5 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. AFT21S232SR5.

Factory Lead Time
10 Weeks
Package / Case
NI-780S
Packaging
Tape & Reel (TR)
Published
2013
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN Code
EAR99
Voltage - Rated
65V
HTS Code
8541.29.00.40
Subcategory
FET General Purpose Power
Peak Reflow Temperature (Cel)
260
Frequency
2.11GHz
Time@Peak Reflow Temperature-Max (s)
40
Operating Temperature (Max)
150°C
Configuration
Single
Current - Test
1.5A
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Gain
16.7dB
Power - Output
50W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)
161W
Voltage - Test
28V
RoHS Status
ROHS3 Compliant

Description

AFT21S232SR5 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet AFT21S232SR5 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of AFT21S232SR5. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

AFT21S232SR5 More Descriptions

Airfast RF Power LDMOS Transistor, 2110-2170 MHz 50 W Avg., 28 V
RF Power Transistor,2110 to 2170 MHz, 182 W, Typ Gain in dB is 16.7 @ 2110 MHz, 28 V, LDMOS, SOT1793
Transistor RF FET N-CH 65V 2110MHz to 2170MHz 2-Pin NI-780S T/R
RF MOSFET Transistors HV9 2.1GHZ 230W NI780S-2

Product Comparison

The three parts on the right have similar specifications to AFT21S232SR5.

Image

Part Number

Manufacturer

Factory Lead Time

Package / Case

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Voltage - Rated

HTS Code

Subcategory

Peak Reflow Temperature (Cel)

Frequency

Time@Peak Reflow Temperature-Max (s)

Operating Temperature (Max)

Configuration

Current - Test

Polarity/Channel Type

Transistor Type

Gain

Power - Output

FET Technology

Power Dissipation-Max (Abs)

Voltage - Test

RoHS Status

View Compare
AFT21S232SR5

NXP USA Inc.

10 Weeks

NI-780S

Tape & Reel (TR)

2013

Not For New Designs

Not Applicable

EAR99

65V

8541.29.00.40

FET General Purpose Power

260

2.11GHz

40

150°C

Single

1.5A

N-CHANNEL

LDMOS

16.7dB

50W

METAL-OXIDE SEMICONDUCTOR

161W

28V

ROHS3 Compliant

-
AFT26P100-4WGSR3

NXP USA Inc.

10 Weeks

-

Tape & Reel (TR)

2006

Not For New Designs

Not Applicable

EAR99

-

8541.29.00.75

-

260

-

40

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

AFT21S232SR5 vs AFT26P100-4WGSR3
AFT23S160W02SR3

NXP USA Inc.

10 Weeks

NI-780S

Tape & Reel (TR)

2013

Not For New Designs

Not Applicable

EAR99

65V

8541.29.00.40

FET General Purpose Power

260

2.4GHz

40

125°C

Single

1.1A

N-CHANNEL

LDMOS

17.9dB

45W

METAL-OXIDE SEMICONDUCTOR

-

28V

ROHS3 Compliant

AFT21S232SR5 vs AFT23S160W02SR3
AFT26H250-24SR6

NXP USA Inc.

10 Weeks

NI-1230-4LS2L

Tape & Reel (TR)

2006

Active

Not Applicable

EAR99

65V

8541.29.00.40

FET General Purpose Power

260

2.5GHz

40

225°C

Single

700mA

N-CHANNEL

LDMOS

14.1dB

50W

METAL-OXIDE SEMICONDUCTOR

-

28V

ROHS3 Compliant

AFT21S232SR5 vs AFT26H250-24SR6