NXP USA Inc. AFT18S290-13SR3
- Part Number:
- AFT18S290-13SR3
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2477478-AFT18S290-13SR3
- Description:
- FET RF 65V 1.96GHZ NI-880X-2L4S
- ECAD Model:
-
- Datasheet:
- AFT18S290-13SR3
NXP USA Inc. AFT18S290-13SR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. AFT18S290-13SR3.
- Factory Lead Time10 Weeks
- Package / CaseNI-880XS-2L4S
- PackagingTape & Reel (TR)
- Published2006
- Part StatusActive
- Moisture Sensitivity Level (MSL)Not Applicable
- ECCN CodeEAR99
- Voltage - Rated65V
- HTS Code8541.29.00.40
- Frequency1.96GHz
- Current - Test2A
- Transistor TypeLDMOS
- Gain18.2dB
- Power - Output63W
- Voltage - Test28V
- RoHS StatusROHS3 Compliant
AFT18S290-13SR3 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet AFT18S290-13SR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of AFT18S290-13SR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet AFT18S290-13SR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of AFT18S290-13SR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
AFT18S290-13SR3 More Descriptions
Airfast RF Power LDMOS Transistor, 1805-1995 MHz 63 W Avg., 28 V
RF Power Transistor,1805 to 1995 MHz, 263 W, Typ Gain in dB is 18.2 @ 1960 MHz, 28 V, LDMOS, SOT1801
Transistor RF FET N-CH 65V 1805MHz to 1995MHz 6-Pin NI−880XS T/R
RF MOSFET Transistors AF1 1.8GHZ NI-880X-2L4S
FET RF 65V 1.96GHZ NI-880X-2L4S
RF Power Transistor,1805 to 1995 MHz, 263 W, Typ Gain in dB is 18.2 @ 1960 MHz, 28 V, LDMOS, SOT1801
Transistor RF FET N-CH 65V 1805MHz to 1995MHz 6-Pin NI−880XS T/R
RF MOSFET Transistors AF1 1.8GHZ NI-880X-2L4S
FET RF 65V 1.96GHZ NI-880X-2L4S
The three parts on the right have similar specifications to AFT18S290-13SR3.
-
ImagePart NumberManufacturerFactory Lead TimePackage / CasePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeVoltage - RatedHTS CodeFrequencyCurrent - TestTransistor TypeGainPower - OutputVoltage - TestRoHS StatusSubcategoryPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Operating Temperature (Max)ConfigurationPolarity/Channel TypeFET TechnologyView Compare
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AFT18S290-13SR310 WeeksNI-880XS-2L4STape & Reel (TR)2006ActiveNot ApplicableEAR9965V8541.29.00.401.96GHz2ALDMOS18.2dB63W28VROHS3 Compliant-------- -
10 WeeksNI-1230-4LS2LTape & Reel (TR)2006ActiveNot ApplicableEAR9965V-1.81GHz1ALDMOS (Dual)16.1dB63W28VROHS3 CompliantFET General Purpose Power26040150°CSingleN-CHANNELMETAL-OXIDE SEMICONDUCTOR
-
10 WeeksNI-780GS-2L2LATape & Reel (TR)2006Not For New DesignsNot ApplicableEAR9965V8541.29.00.751.88GHz1.8ALDMOS19.6dB50W28VROHS3 Compliant-26040----
-
10 WeeksNI-780S-6Tape & Reel (TR)2006Active3 (168 Hours)EAR9965V8541.29.00.751.88GHz1.8ALDMOS19dB50W28VROHS3 CompliantFET General Purpose Power26040150°CSingleN-CHANNELMETAL-OXIDE SEMICONDUCTOR
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