NXP USA Inc. AFT18HW355SR6

Name: AFT18HW355SR6
Brand: NXP USA Inc.
SKU: 3069919-AFT18HW355SR6
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: AFT18HW355SR6

Manufacturer:: NXP USA Inc.

Ventron No:: 3069919-AFT18HW355SR6

Description:: FET RF 2CH 65V 1.88GHZ NI1230S-4

ECAD Model:

Datasheet:: AFT18HW355SR6

Specifications

NXP USA Inc. AFT18HW355SR6 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. AFT18HW355SR6.

Factory Lead Time
10 Weeks
Package / Case
NI-1230S
Packaging
Tape & Reel (TR)
Published
2013
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN Code
EAR99
Voltage - Rated
65V
HTS Code
8541.29.00.40
Frequency
1.88GHz
Current - Test
1.1A
Transistor Type
LDMOS (Dual)
Gain
15.2dB
Power - Output
63W
Voltage - Test
28V
RoHS Status
ROHS3 Compliant

Description

AFT18HW355SR6 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet AFT18HW355SR6 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of AFT18HW355SR6. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

AFT18HW355SR6 More Descriptions

Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 63 W Avg., 28 V
RF Power Transistor,1805 to 1880 MHz, 350 W, Typ Gain in dB is 15.2 @ 1880 MHz, 28 V, LDMOS, SOT1829
Trans RF MOSFET N-CH 65V 5-Pin NI-1230S T/R
RF MOSFET Transistors HV9 1.8GHz 350W NI230S-4
FET RF 2CH 65V 1.88GHZ NI1230S-4

Product Comparison

The three parts on the right have similar specifications to AFT18HW355SR6.

Image

Part Number

Manufacturer

Factory Lead Time

Package / Case

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Voltage - Rated

HTS Code

Frequency

Current - Test

Transistor Type

Gain

Power - Output

Voltage - Test

RoHS Status

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Subcategory

Operating Temperature (Max)

Configuration

Polarity/Channel Type

FET Technology

View Compare
AFT18HW355SR6

NXP USA Inc.

10 Weeks

NI-1230S

Tape & Reel (TR)

2013

Obsolete

Not Applicable

EAR99

65V

8541.29.00.40

1.88GHz

1.1A

LDMOS (Dual)

15.2dB

63W

28V

ROHS3 Compliant

-

-

-

-

-

-

-

-
AFT18HW355SR5

NXP USA Inc.

10 Weeks

NI-1230S

Tape & Reel (TR)

2013

Obsolete

Not Applicable

EAR99

65V

8541.29.00.40

1.88GHz

1.1A

LDMOS (Dual)

15.2dB

63W

28V

ROHS3 Compliant

-

-

-

-

-

-

-

AFT18HW355SR6 vs AFT18HW355SR5
AFT18S260W31GSR3

NXP USA Inc.

10 Weeks

NI-780GS-2L2LA

Tape & Reel (TR)

2006

Not For New Designs

Not Applicable

EAR99

65V

8541.29.00.75

1.88GHz

1.8A

LDMOS

19.6dB

50W

28V

ROHS3 Compliant

260

40

-

-

-

-

-

AFT18HW355SR6 vs AFT18S260W31GSR3
AFT18S230SR5

NXP USA Inc.

10 Weeks

NI-780S-6

Tape & Reel (TR)

2006

Active

3 (168 Hours)

EAR99

65V

8541.29.00.75

1.88GHz

1.8A

LDMOS

19dB

50W

28V

ROHS3 Compliant

260

40

FET General Purpose Power

150°C

Single

N-CHANNEL

METAL-OXIDE SEMICONDUCTOR

AFT18HW355SR6 vs AFT18S230SR5