NXP USA Inc. AFT18H357-24SR6
- Part Number:
- AFT18H357-24SR6
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2477465-AFT18H357-24SR6
- Description:
- FET RF 2CH 65V 1.81GHZ NI1230-4
- Datasheet:
- AFT18H357-24SR6
NXP USA Inc. AFT18H357-24SR6 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. AFT18H357-24SR6.
- Factory Lead Time10 Weeks
- Package / CaseNI-1230-4LS2L
- PackagingTape & Reel (TR)
- Published2013
- Part StatusActive
- Moisture Sensitivity Level (MSL)Not Applicable
- ECCN CodeEAR99
- Voltage - Rated65V
- HTS Code8541.29.00.75
- Peak Reflow Temperature (Cel)260
- Frequency1.81GHz
- Time@Peak Reflow Temperature-Max (s)40
- Current - Test800mA
- Transistor TypeLDMOS (Dual)
- Gain17.3dB
- Power - Output63W
- Voltage - Test28V
- RoHS StatusROHS3 Compliant
AFT18H357-24SR6 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet AFT18H357-24SR6 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of AFT18H357-24SR6. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet AFT18H357-24SR6 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of AFT18H357-24SR6. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
AFT18H357-24SR6 More Descriptions
AIRFAST RF POWER LDMOS TRANSISTOR, 1805-1995 MHz, 63 W AVG., 28 V
RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET
RF Power Transistor,1805 to 1995 MHz, 220 W, Typ Gain in dB is 17.3 @ 1805 MHz, 28 V, LDMOS, SOT1800
Trans MOSFET N-CH 65V 6-Pin NI-1230S T/R
RF MOSFET LDMOS DL 28V NI1230-4
FET RF 2CH 65V 1.81GHZ NI1230-4
RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET
RF Power Transistor,1805 to 1995 MHz, 220 W, Typ Gain in dB is 17.3 @ 1805 MHz, 28 V, LDMOS, SOT1800
Trans MOSFET N-CH 65V 6-Pin NI-1230S T/R
RF MOSFET LDMOS DL 28V NI1230-4
FET RF 2CH 65V 1.81GHZ NI1230-4
The three parts on the right have similar specifications to AFT18H357-24SR6.
-
ImagePart NumberManufacturerFactory Lead TimePackage / CasePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeVoltage - RatedHTS CodePeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Current - TestTransistor TypeGainPower - OutputVoltage - TestRoHS StatusSubcategoryOperating Temperature (Max)ConfigurationPolarity/Channel TypeFET TechnologyView Compare
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AFT18H357-24SR610 WeeksNI-1230-4LS2LTape & Reel (TR)2013ActiveNot ApplicableEAR9965V8541.29.00.752601.81GHz40800mALDMOS (Dual)17.3dB63W28VROHS3 Compliant------
-
10 WeeksNI-1230STape & Reel (TR)2013ObsoleteNot ApplicableEAR9965V8541.29.00.40-1.88GHz-1.1ALDMOS (Dual)15.2dB63W28VROHS3 Compliant-----
-
10 WeeksNI-780S-2L2LATape & Reel (TR)2006Not For New DesignsNot ApplicableEAR9965V8541.29.00.752601.88GHz401.8ALDMOS19.6dB50W28VROHS3 Compliant-----
-
10 WeeksNI-780S-6Tape & Reel (TR)2006Active3 (168 Hours)EAR9965V8541.29.00.752601.88GHz401.8ALDMOS19dB50W28VROHS3 CompliantFET General Purpose Power150°CSingleN-CHANNELMETAL-OXIDE SEMICONDUCTOR
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