NXP USA Inc. A2T21S260-12SR3
- Part Number:
- A2T21S260-12SR3
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2477460-A2T21S260-12SR3
- Description:
- IC TRANS RF LDMOS
- ECAD Model:
-
- Datasheet:
- A2T21S260-12SR3
NXP USA Inc. A2T21S260-12SR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. A2T21S260-12SR3.
- Factory Lead Time10 Weeks
- Package / CaseNI-780-2S2L
- PackagingTape & Reel (TR)
- Published2006
- Part StatusActive
- Moisture Sensitivity Level (MSL)Not Applicable
- ECCN CodeEAR99
- Voltage - Rated65V
- HTS Code8541.29.00.75
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Frequency2.17GHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Current - Test1.2A
- Transistor TypeLDMOS
- Gain18.7dB
- Power - Output65W
- Voltage - Test28V
- RoHS StatusROHS3 Compliant
A2T21S260-12SR3 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet A2T21S260-12SR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of A2T21S260-12SR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet A2T21S260-12SR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of A2T21S260-12SR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
A2T21S260-12SR3 More Descriptions
RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 65 W Avg., 28 V
RF Power Transistor,2110 to 2170 MHz, 208 W, Typ Gain in dB is 18.7 @ 2170 MHz, 28 V, LDMOS, SOT1785
Trans MOSFET N-CH 65V 4-Pin NI-780S T/R
IC REG DL BUCK/LNR 1MHZ 16TQFN
RF Power Transistor,2110 to 2170 MHz, 208 W, Typ Gain in dB is 18.7 @ 2170 MHz, 28 V, LDMOS, SOT1785
Trans MOSFET N-CH 65V 4-Pin NI-780S T/R
IC REG DL BUCK/LNR 1MHZ 16TQFN
The three parts on the right have similar specifications to A2T21S260-12SR3.
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ImagePart NumberManufacturerFactory Lead TimePackage / CasePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeVoltage - RatedHTS CodePeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Current - TestTransistor TypeGainPower - OutputVoltage - TestRoHS StatusView Compare
-
A2T21S260-12SR310 WeeksNI-780-2S2LTape & Reel (TR)2006ActiveNot ApplicableEAR9965V8541.29.00.75NOT SPECIFIED2.17GHzNOT SPECIFIED1.2ALDMOS18.7dB65W28VROHS3 Compliant- -
10 WeeksNI-780-2S2LTape & Reel (TR)2006ActiveNot ApplicableEAR9965V8541.29.00.75NOT SPECIFIED2.17GHzNOT SPECIFIED600mALDMOS18.4dB38W28VROHS3 Compliant
-
10 WeeksNI-780S-4L2LTape & Reel (TR)2014ActiveNot ApplicableEAR9965V8541.29.00.75-2.58GHz-350mALDMOS (Dual)15.5dB28W28VROHS3 Compliant
-
10 Weeks-Tape & Reel (TR)2006ActiveNot ApplicableEAR99-8541.29.00.75----N-Channel---ROHS3 Compliant
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