NXP USA Inc. A2T26H165-24SR3
- Part Number:
- A2T26H165-24SR3
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2477315-A2T26H165-24SR3
- Description:
- IC TRANS RF LDMOS
- ECAD Model:
-
- Datasheet:
- A2T26H165-24SR3
NXP USA Inc. A2T26H165-24SR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. A2T26H165-24SR3.
- Factory Lead Time10 Weeks
- Package / CaseNI-780S-4L2L
- PackagingTape & Reel (TR)
- Published2014
- Part StatusActive
- Moisture Sensitivity Level (MSL)Not Applicable
- Voltage - Rated65V
- Frequency2.5GHz
- Current - Test400mA
- Transistor TypeLDMOS (Dual)
- Gain14.7dB
- Power - Output32W
- Voltage - Test28V
- RoHS StatusROHS3 Compliant
A2T26H165-24SR3 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet A2T26H165-24SR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of A2T26H165-24SR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet A2T26H165-24SR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of A2T26H165-24SR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
A2T26H165-24SR3 More Descriptions
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 32 W Avg., 28 V
RF Power Transistor,2496 to 2690 MHz, 141 W, Typ Gain in dB is 14.7 @ 2496 MHz, 28 V, LDMOS, SOT1799
Transistor RF FET N-CH 65V 2496MHz to 2690MHz 4-Pin NI-780S T/R
RF Power Transistor,2496 to 2690 MHz, 141 W, Typ Gain in dB is 14.7 @ 2496 MHz, 28 V, LDMOS, SOT1799
Transistor RF FET N-CH 65V 2496MHz to 2690MHz 4-Pin NI-780S T/R
The three parts on the right have similar specifications to A2T26H165-24SR3.
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ImagePart NumberManufacturerFactory Lead TimePackage / CasePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Voltage - RatedFrequencyCurrent - TestTransistor TypeGainPower - OutputVoltage - TestRoHS StatusECCN CodeHTS CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)View Compare
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A2T26H165-24SR310 WeeksNI-780S-4L2LTape & Reel (TR)2014ActiveNot Applicable65V2.5GHz400mALDMOS (Dual)14.7dB32W28VROHS3 Compliant----- -
10 WeeksNI-780-2S2LTape & Reel (TR)2006ActiveNot Applicable65V2.17GHz600mALDMOS18.4dB38W28VROHS3 CompliantEAR998541.29.00.75NOT SPECIFIEDNOT SPECIFIED
-
10 WeeksNI-780S-4L2LTape & Reel (TR)2014ActiveNot Applicable65V2.58GHz350mALDMOS (Dual)15.5dB28W28VROHS3 CompliantEAR998541.29.00.75--
-
10 Weeks-Tape & Reel (TR)2006ActiveNot Applicable---N-Channel---ROHS3 CompliantEAR998541.29.00.75--
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