NXP USA Inc. A2T20H330W24SR6
- Part Number:
- A2T20H330W24SR6
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2477437-A2T20H330W24SR6
- Description:
- IC TRANS RF LDMOS
- ECAD Model:
-
- Datasheet:
- RF Products Selector Guide
NXP USA Inc. A2T20H330W24SR6 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. A2T20H330W24SR6.
- Factory Lead Time10 Weeks
- Package / CaseNI-1230-4LS2L
- PackagingTape & Reel (TR)
- Published2006
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Voltage - Rated65V
- HTS Code8541.29.00.75
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Frequency1.88GHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Current - Test700mA
- Transistor TypeLDMOS (Dual)
- Gain16.5dB
- Power - Output58W
- Voltage - Test28V
- RoHS StatusROHS3 Compliant
A2T20H330W24SR6 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet A2T20H330W24SR6 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of A2T20H330W24SR6. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet A2T20H330W24SR6 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of A2T20H330W24SR6. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
A2T20H330W24SR6 More Descriptions
RF MOSFET Transistors Airfast RF Power LDMOS Transistor 1880-2025 MHz, 58 W Avg., 28 V
RF MOSFET Transistors A2T20H330W24S/CFM6F///REEL 13 Q2/T3 *STANDARD MAR
RF Power Transistor,1880 to 2025 MHz, 240 W, Typ Gain in dB is 16.9 @ 1960 MHz, 28 V, LDMOS, SOT1800
Trans MOSFET N-CH 65V 6-Pin NI-1230 T/R
RF MOSFET Transistors A2T20H330W24S/CFM6F///REEL 13 Q2/T3 *STANDARD MAR
RF Power Transistor,1880 to 2025 MHz, 240 W, Typ Gain in dB is 16.9 @ 1960 MHz, 28 V, LDMOS, SOT1800
Trans MOSFET N-CH 65V 6-Pin NI-1230 T/R
The three parts on the right have similar specifications to A2T20H330W24SR6.
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ImagePart NumberManufacturerFactory Lead TimePackage / CasePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeVoltage - RatedHTS CodePeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Current - TestTransistor TypeGainPower - OutputVoltage - TestRoHS StatusView Compare
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A2T20H330W24SR610 WeeksNI-1230-4LS2LTape & Reel (TR)2006Not For New Designs1 (Unlimited)EAR9965V8541.29.00.75NOT SPECIFIED1.88GHzNOT SPECIFIED700mALDMOS (Dual)16.5dB58W28VROHS3 Compliant- -
10 WeeksNI-780-2S2LTape & Reel (TR)2006ActiveNot ApplicableEAR9965V8541.29.00.75NOT SPECIFIED2.17GHzNOT SPECIFIED1.2ALDMOS18.7dB65W28VROHS3 Compliant
-
10 WeeksNI-780S-4L2LTape & Reel (TR)2014ActiveNot ApplicableEAR9965V8541.29.00.75-2.58GHz-350mALDMOS (Dual)15.5dB28W28VROHS3 Compliant
-
10 WeeksNI-780S-4L2LTape & Reel (TR)2014ActiveNot Applicable-65V--2.5GHz-400mALDMOS (Dual)14.7dB32W28VROHS3 Compliant
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