NXP USA Inc. A2T18H450W19SR6

Name: A2T18H450W19SR6
Brand: NXP USA Inc.
SKU: 3813554-A2T18H450W19SR6
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: A2T18H450W19SR6

Manufacturer:: NXP USA Inc.

Ventron No:: 3813554-A2T18H450W19SR6

Description:: IC TRANS RF LDMOS

ECAD Model:

Datasheet:: RF Products Selector Guide

Specifications

NXP USA Inc. A2T18H450W19SR6 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. A2T18H450W19SR6.

Factory Lead Time
10 Weeks
Package / Case
NI-1230S-4S4S
Packaging
Tape & Reel (TR)
Published
2011
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN Code
EAR99
Voltage - Rated
30V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Frequency
1.805GHz~1.88GHz
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Type
LDMOS
Gain
16.5dB
Power - Output
89W
RoHS Status
ROHS3 Compliant

Description

A2T18H450W19SR6 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet A2T18H450W19SR6 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of A2T18H450W19SR6. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

A2T18H450W19SR6 More Descriptions

RF MOSFET Transistors Airfast RF Power LDMOS Transistor 1805-1880 MHz, 89 W Avg., 30 V
RF Power Transistor,1805 to 1880 MHz, 199 W, Typ Gain in dB is 16.5 @ 1880 MHz, 30 V, LDMOS, SOT1795
Trans MOSFET N-CH -0.5V/65V 4-Pin NI-1230S T/R
IC REG DL BUCK/LNR 1MHZ 16TQFN

Product Comparison

The three parts on the right have similar specifications to A2T18H450W19SR6.

Image

Part Number

Manufacturer

Factory Lead Time

Package / Case

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Voltage - Rated

Peak Reflow Temperature (Cel)

Frequency

Time@Peak Reflow Temperature-Max (s)

Transistor Type

Gain

Power - Output

RoHS Status

HTS Code

Current - Test

Voltage - Test

View Compare
A2T18H450W19SR6

NXP USA Inc.

10 Weeks

NI-1230S-4S4S

Tape & Reel (TR)

2011

Not For New Designs

Not Applicable

EAR99

30V

NOT SPECIFIED

1.805GHz~1.88GHz

NOT SPECIFIED

LDMOS

16.5dB

89W

ROHS3 Compliant

-

-

-

-
A2T18S160W31GSR3

NXP USA Inc.

10 Weeks

NI-780GS-2L2LA

Tape & Reel (TR)

2006

Not For New Designs

Not Applicable

EAR99

65V

260

1.88GHz

40

LDMOS

19.9dB

32W

ROHS3 Compliant

8541.29.00.75

1A

28V

A2T18H450W19SR6 vs A2T18S160W31GSR3
A2T18H160-24SR3

NXP USA Inc.

10 Weeks

NI-780S-4L2L

Tape & Reel (TR)

2006

Active

Not Applicable

EAR99

65V

NOT SPECIFIED

1.81GHz

NOT SPECIFIED

LDMOS (Dual)

17.9dB

28W

ROHS3 Compliant

8541.29.00.75

400mA

28V

A2T18H450W19SR6 vs A2T18H160-24SR3
A2T18H100-25SR3

NXP USA Inc.

10 Weeks

NI-780-4S4

Tape & Reel (TR)

2006

Active

Not Applicable

EAR99

65V

NOT SPECIFIED

1.81GHz

NOT SPECIFIED

LDMOS (Dual)

18.1dB

18W

ROHS3 Compliant

8541.29.00.75

230mA

28V

A2T18H450W19SR6 vs A2T18H100-25SR3