NXP USA Inc. A2T18S160W31SR3
- Part Number:
- A2T18S160W31SR3
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 3813716-A2T18S160W31SR3
- Description:
- IC TRANS RF LDMOS
- ECAD Model:
-
- Datasheet:
- RF Products Selector Guide
NXP USA Inc. A2T18S160W31SR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. A2T18S160W31SR3.
- Factory Lead Time10 Weeks
- Package / CaseNI-780S-2L2LA
- PackagingTape & Reel (TR)
- Published2006
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)Not Applicable
- ECCN CodeEAR99
- Voltage - Rated65V
- HTS Code8541.29.00.75
- Peak Reflow Temperature (Cel)260
- Frequency1.88GHz
- Time@Peak Reflow Temperature-Max (s)40
- Current - Test1A
- Transistor TypeLDMOS
- Gain19.9dB
- Power - Output32W
- Voltage - Test28V
- RoHS StatusROHS3 Compliant
A2T18S160W31SR3 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet A2T18S160W31SR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of A2T18S160W31SR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet A2T18S160W31SR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of A2T18S160W31SR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
A2T18S160W31SR3 More Descriptions
RF MOSFET Transistors Airfast RF Power LDMOS Transistor 1805-1995 MHz, 32 W Avg., 28 V
RF Power Transistor,1805 to 1995 MHz, 129 W, Typ Gain in dB is 19.9 @ 1880 MHz, 28 V, LDMOS, SOT1785
Trans MOSFET N-CH -0.5V/65V 4-Pin NI-780S Box
IC REG CTRLR MULT TOPOLOGY 8SOIC
RF Power Transistor,1805 to 1995 MHz, 129 W, Typ Gain in dB is 19.9 @ 1880 MHz, 28 V, LDMOS, SOT1785
Trans MOSFET N-CH -0.5V/65V 4-Pin NI-780S Box
IC REG CTRLR MULT TOPOLOGY 8SOIC
The three parts on the right have similar specifications to A2T18S160W31SR3.
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ImagePart NumberManufacturerFactory Lead TimePackage / CasePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeVoltage - RatedHTS CodePeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Current - TestTransistor TypeGainPower - OutputVoltage - TestRoHS StatusView Compare
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A2T18S160W31SR310 WeeksNI-780S-2L2LATape & Reel (TR)2006Not For New DesignsNot ApplicableEAR9965V8541.29.00.752601.88GHz401ALDMOS19.9dB32W28VROHS3 Compliant- -
10 WeeksNI-780S-2L2LATape & Reel (TR)2006Last Time BuyNot ApplicableEAR9965V8541.29.00.75NOT SPECIFIED1.84GHzNOT SPECIFIED1ALDMOS20.1dB32W28VROHS3 Compliant
-
10 WeeksNI-780GS-2L2LATape & Reel (TR)2006Last Time BuyNot ApplicableEAR9965V8541.29.00.75NOT SPECIFIED1.84GHzNOT SPECIFIED1ALDMOS20.1dB32W28VROHS3 Compliant
-
10 WeeksNI-780S-4L2LTape & Reel (TR)2006ActiveNot ApplicableEAR9965V8541.29.00.75NOT SPECIFIED1.81GHzNOT SPECIFIED400mALDMOS (Dual)17.9dB28W28VROHS3 Compliant
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