A2T18H100-25SR3

NXP USA Inc. A2T18H100-25SR3

Part Number:
A2T18H100-25SR3
Manufacturer:
NXP USA Inc.
Ventron No:
2476341-A2T18H100-25SR3
Description:
FET RF 2CH 65V 1.81GHZ
ECAD Model:
Datasheet:
A2T18H100-25SR3

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Specifications
NXP USA Inc. A2T18H100-25SR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. A2T18H100-25SR3.
  • Factory Lead Time
    10 Weeks
  • Package / Case
    NI-780-4S4
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    Not Applicable
  • ECCN Code
    EAR99
  • Voltage - Rated
    65V
  • HTS Code
    8541.29.00.75
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Frequency
    1.81GHz
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Current - Test
    230mA
  • Transistor Type
    LDMOS (Dual)
  • Gain
    18.1dB
  • Power - Output
    18W
  • Voltage - Test
    28V
  • RoHS Status
    ROHS3 Compliant
Description
A2T18H100-25SR3 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet A2T18H100-25SR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of A2T18H100-25SR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
A2T18H100-25SR3 More Descriptions
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1995 MHz, 15 W Avg., 28 V
RF Power Transistor,1805 to 1995 MHz, 72 W, Typ Gain in dB is 18.1 @ 1805 MHz, 28 V, LDMOS, SOT1797
Trans MOSFET N-CH -0.5V/65V 8-Pin NI-780S T/R
Product Comparison
The three parts on the right have similar specifications to A2T18H100-25SR3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Package / Case
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Voltage - Rated
    HTS Code
    Peak Reflow Temperature (Cel)
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Current - Test
    Transistor Type
    Gain
    Power - Output
    Voltage - Test
    RoHS Status
    View Compare
  • A2T18H100-25SR3
    A2T18H100-25SR3
    10 Weeks
    NI-780-4S4
    Tape & Reel (TR)
    2006
    Active
    Not Applicable
    EAR99
    65V
    8541.29.00.75
    NOT SPECIFIED
    1.81GHz
    NOT SPECIFIED
    230mA
    LDMOS (Dual)
    18.1dB
    18W
    28V
    ROHS3 Compliant
    -
  • A2T18H450W19SR6
    10 Weeks
    NI-1230S-4S4S
    Tape & Reel (TR)
    2011
    Not For New Designs
    Not Applicable
    EAR99
    30V
    -
    NOT SPECIFIED
    1.805GHz~1.88GHz
    NOT SPECIFIED
    -
    LDMOS
    16.5dB
    89W
    -
    ROHS3 Compliant
  • A2T18S162W31SR3
    10 Weeks
    NI-780S-2L2LA
    Tape & Reel (TR)
    2006
    Last Time Buy
    Not Applicable
    EAR99
    65V
    8541.29.00.75
    NOT SPECIFIED
    1.84GHz
    NOT SPECIFIED
    1A
    LDMOS
    20.1dB
    32W
    28V
    ROHS3 Compliant
  • A2T18S160W31GSR3
    10 Weeks
    NI-780GS-2L2LA
    Tape & Reel (TR)
    2006
    Not For New Designs
    Not Applicable
    EAR99
    65V
    8541.29.00.75
    260
    1.88GHz
    40
    1A
    LDMOS
    19.9dB
    32W
    28V
    ROHS3 Compliant
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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