ON Semiconductor 3LN01S-TL-E
- Part Number:
- 3LN01S-TL-E
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2491277-3LN01S-TL-E
- Description:
- MOSFET N-CH 30V 150MA SMCP
- Datasheet:
- 3LN01S
ON Semiconductor 3LN01S-TL-E technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 3LN01S-TL-E.
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee6
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Pin Count3
- Power Dissipation-Max150mW Ta
- Element ConfigurationSingle
- Power Dissipation150mW
- Turn On Delay Time19 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs3.7 Ω @ 80mA, 4V
- Input Capacitance (Ciss) (Max) @ Vds7pF @ 10V
- Current - Continuous Drain (Id) @ 25°C150mA Ta
- Gate Charge (Qg) (Max) @ Vgs1.58nC @ 10V
- Rise Time65ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)1.5V 4V
- Vgs (Max)±10V
- Fall Time (Typ)120 ns
- Turn-Off Delay Time155 ns
- Continuous Drain Current (ID)150mA
- Gate to Source Voltage (Vgs)10V
- Drain Current-Max (Abs) (ID)0.15A
- Height750μm
- Length1.6mm
- Width800μm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
3LN01S-TL-E Overview
A device's maximum input capacitance is 7pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 150mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 0.15A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 155 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 19 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (1.5V 4V) to reduce its overall power consumption.
3LN01S-TL-E Features
a continuous drain current (ID) of 150mA
the turn-off delay time is 155 ns
a 30V drain to source voltage (Vdss)
3LN01S-TL-E Applications
There are a lot of ON Semiconductor
3LN01S-TL-E applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 7pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 150mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 0.15A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 155 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 19 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (1.5V 4V) to reduce its overall power consumption.
3LN01S-TL-E Features
a continuous drain current (ID) of 150mA
the turn-off delay time is 155 ns
a 30V drain to source voltage (Vdss)
3LN01S-TL-E Applications
There are a lot of ON Semiconductor
3LN01S-TL-E applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
3LN01S-TL-E More Descriptions
Small Signal MOSFET 30V 150mA 3.7 Ohm Single N-Channel SMCP
3LN01S-TL-E N-channel MOSFET Transistor, 0.15 A, 30 V, 3-Pin SMCP | ON Semiconductor 3LN01S-TL-E
Trans MOSFET N-CH Si 30V 0.15A 3-Pin SMCP T/R / MOSFET N-CH 30V 150MA SMCP
MOSFET, N CH 30V 0.15A SOT89; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:30V; Cont Current Id:0.15A; On State Resistance:3.7ohm; Voltage Vgs Rds on Measurement:4V; Typ Voltage Vgs th:1.3V; Case Style:SMCP; Termination Type:SMD; Power Dissipation:0.15W; Transistor Case Style:SMCP
3LN01S-TL-E N-channel MOSFET Transistor, 0.15 A, 30 V, 3-Pin SMCP | ON Semiconductor 3LN01S-TL-E
Trans MOSFET N-CH Si 30V 0.15A 3-Pin SMCP T/R / MOSFET N-CH 30V 150MA SMCP
MOSFET, N CH 30V 0.15A SOT89; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:30V; Cont Current Id:0.15A; On State Resistance:3.7ohm; Voltage Vgs Rds on Measurement:4V; Typ Voltage Vgs th:1.3V; Case Style:SMCP; Termination Type:SMD; Power Dissipation:0.15W; Transistor Case Style:SMCP
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