2SK4017(Q)

Toshiba Semiconductor and Storage 2SK4017(Q)

Part Number:
2SK4017(Q)
Manufacturer:
Toshiba Semiconductor and Storage
Ventron No:
2485988-2SK4017(Q)
Description:
MOSFET N-CH 60V 5A PW-MOLD2
ECAD Model:
Datasheet:
Mosfets Prod Guide

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Specifications
Toshiba Semiconductor and Storage 2SK4017(Q) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage 2SK4017(Q).
  • Factory Lead Time
    52 Weeks
  • Contact Plating
    Silver, Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-251-3 Stub Leads, IPak
  • Number of Pins
    3
  • Operating Temperature
    150°C TJ
  • Packaging
    Bulk
  • Series
    U-MOSIII
  • Published
    2009
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Power Dissipation-Max
    20W Tc
  • Element Configuration
    Single
  • Power Dissipation
    20W
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    100m Ω @ 2.5A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    730pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    15nC @ 10V
  • Rise Time
    10ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    4V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    4 ns
  • Continuous Drain Current (ID)
    5A
  • Threshold Voltage
    2.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Nominal Vgs
    2.5 V
  • Height
    5.5mm
  • Length
    6.5mm
  • Width
    2.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
2SK4017(Q) Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 730pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5A continuous drain current (ID).An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2.5V, which means that it will not activate any of its functions when its threshold voltage reaches 2.5V.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (4V 10V), this device contributes to a reduction in overall power consumption.

2SK4017(Q) Features
a continuous drain current (ID) of 5A
a threshold voltage of 2.5V
a 60V drain to source voltage (Vdss)


2SK4017(Q) Applications
There are a lot of Toshiba Semiconductor and Storage
2SK4017(Q) applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
2SK4017(Q) More Descriptions
Mosfet Transistor, N Channel, 5 A, 60 V, 100 Mohm, 10 V, 2.5 V Rohs Compliant: Yes
Trans MOSFET N-CH Si 60V 5A 3-Pin(3 Tab) PW-Mold2
MOSFET, N CH, 5A, 60V, TO251AA,; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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