Rohm Semiconductor 2SA1514KT146S
- Part Number:
- 2SA1514KT146S
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2845996-2SA1514KT146S
- Description:
- TRANS PNP 120V 0.05A SOT-346
- Datasheet:
- 2SA1579(1514K/1038S)
Rohm Semiconductor 2SA1514KT146S technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SA1514KT146S.
- Factory Lead Time13 Weeks
- Contact PlatingCopper, Silver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2001
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC-120V
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-50mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number2SA1514
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power - Max200mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product140MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 2mA 6V
- Current - Collector Cutoff (Max)500nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 1mA, 10mA
- Collector Emitter Breakdown Voltage120V
- Transition Frequency140MHz
- Collector Emitter Saturation Voltage-500mV
- Max Breakdown Voltage120V
- Collector Base Voltage (VCBO)-120V
- Emitter Base Voltage (VEBO)-5V
- hFE Min180
- Continuous Collector Current-50mA
- VCEsat-Max0.5 V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SA1514KT146S Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 180 @ 2mA 6V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -50mA for high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -50mA.In the part, the transition frequency is 140MHz.This device can take an input voltage of 120V volts before it breaks down.A maximum collector current of 50mA volts can be achieved.
2SA1514KT146S Features
the DC current gain for this device is 180 @ 2mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
the current rating of this device is -50mA
a transition frequency of 140MHz
2SA1514KT146S Applications
There are a lot of ROHM Semiconductor
2SA1514KT146S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 180 @ 2mA 6V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -50mA for high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -50mA.In the part, the transition frequency is 140MHz.This device can take an input voltage of 120V volts before it breaks down.A maximum collector current of 50mA volts can be achieved.
2SA1514KT146S Features
the DC current gain for this device is 180 @ 2mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
the current rating of this device is -50mA
a transition frequency of 140MHz
2SA1514KT146S Applications
There are a lot of ROHM Semiconductor
2SA1514KT146S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SA1514KT146S More Descriptions
2SA1514K Series 120 V 50 mA 0.2 W Surface Mount PNP Transistor - SOT-346 (SC-59)
Trans GP BJT PNP 120V 0.05A 3-Pin SMT T/R
French Electronic Distributor since 1988
Trans GP BJT PNP 120V 0.05A 3-Pin SMT T/R
French Electronic Distributor since 1988
The three parts on the right have similar specifications to 2SA1514KT146S.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentVCEsat-MaxRadiation HardeningRoHS StatusLead FreeSupplier Device PackageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionView Compare
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2SA1514KT146S13 WeeksCopper, Silver, TinSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON150°C TJTape & Reel (TR)2001e1yesActive1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)8541.21.00.75Other Transistors-120V200mWDUALGULL WING260-50mA102SA151431Single200mWAMPLIFIER140MHzPNPPNP500mV50mA180 @ 2mA 6V500nA ICBO500mV @ 1mA, 10mA120V140MHz-500mV120V-120V-5V180-50mA0.5 VNoROHS3 CompliantLead Free-----
-
--Surface MountSurface MountTO-236-3, SC-59, SOT-23-3--150°C TJTape & Reel (TR)2003--Obsolete1 (Unlimited)------55V200mW----50mA-2SA10350---200mW---PNP600mV50mA260 @ 2mA 5V1μA600mV @ 10mA, 100mA55V--55V------RoHS CompliantLead FreeMini3-G155V50mA200MHz
-
--Through HoleThrough Hole3-SSIP--150°C TJTape & Box (TB)2003--Obsolete1 (Unlimited)------50V300mW----100mA-2SA1309---300mW---PNP300mV100mA210 @ 2mA 10V1μA300mV @ 5mA, 50mA50V--50V------RoHS Compliant-NS-B150V100mA80MHz
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12 Weeks-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3--125°C TJTape & Reel (TR)2013--Active1 (Unlimited)------150mW---------150mW-200MHz-PNP250mV500mA120 @ 100mA 1V100nA ICBO250mV @ 10mA, 100mA30V--250mV30V-35V-5V25-500mA--RoHS Compliant-----
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