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2N6782

Microsemi Corporation 2N6782

Part Number:
2N6782
Manufacturer:
Microsemi Corporation
Ventron No:
2853216-2N6782
Description:
MOSFET N-CH 100V TO-205AF
ECAD Model:
Datasheet:
2N6782

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Specifications
Microsemi Corporation 2N6782 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N6782.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AF Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2015
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN LEAD
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    800mW Ta 15W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    600m Ω @ 2.25A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C
    3.5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    8.1nC @ 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    3.5A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.61Ohm
  • DS Breakdown Voltage-Min
    100V
  • RoHS Status
    Non-RoHS Compliant
Description
2N6782 Overview
The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3.5A. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 100V in order to maintain normal operation.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

2N6782 Features
a continuous drain current (ID) of 3.5A
a 100V drain to source voltage (Vdss)


2N6782 Applications
There are a lot of Microsemi Corporation
2N6782 applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
2N6782 More Descriptions
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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