Microsemi Corporation 2N6766
- Part Number:
- 2N6766
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3586798-2N6766
- Description:
- MOSFET N-CH 200V TO-204AE TO-3
- ECAD Model:
-
- Datasheet:
- 2N6766
Microsemi Corporation 2N6766 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N6766.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-204AE
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published1997
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTIN LEAD OVER NICKEL
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count2
- JESD-30 CodeO-MBFM-P2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max4W Ta 150W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs90m Ω @ 30A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Current - Continuous Drain (Id) @ 25°C30A Tc
- Gate Charge (Qg) (Max) @ Vgs115nC @ 10V
- Rise Time190ns
- Drain to Source Voltage (Vdss)200V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)30A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.065Ohm
- DS Breakdown Voltage-Min200V
- RoHS StatusNon-RoHS Compliant
2N6766 Overview
The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 30A. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
2N6766 Features
a continuous drain current (ID) of 30A
a 200V drain to source voltage (Vdss)
2N6766 Applications
There are a lot of Microsemi Corporation
2N6766 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 30A. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
2N6766 Features
a continuous drain current (ID) of 30A
a 200V drain to source voltage (Vdss)
2N6766 Applications
There are a lot of Microsemi Corporation
2N6766 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
2N6766 More Descriptions
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
N CH MOSFET, 200V, 30A, TO-204AE; Transi; N CH MOSFET, 200V, 30A, TO-204AE; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:200V; On Resistance Rds(on):85mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V
200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
N CH MOSFET, 200V, 30A, TO-204AE; Transi; N CH MOSFET, 200V, 30A, TO-204AE; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:200V; On Resistance Rds(on):85mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V
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