Fairchild/ON Semiconductor 2N5458
- Part Number:
- 2N5458
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3072113-2N5458
- Description:
- JFET N-CH 25V 625MW TO92
- Datasheet:
- 2N5458
Fairchild/ON Semiconductor 2N5458 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N5458.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Weight201mg
- Transistor Element MaterialSILICON
- Operating Temperature135°C TJ
- PackagingBulk
- Published2006
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureLOW NOISE
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Voltage - Rated DC25V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating10mA
- Time@Peak Reflow Temperature-Max (s)30
- Base Part Number2N5458
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Operating ModeDEPLETION MODE
- Power Dissipation625mW
- Power - Max310mW
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Input Capacitance (Ciss) (Max) @ Vds7pF @ 15V
- Breakdown Voltage25V
- Continuous Drain Current (ID)9mA
- Gate to Source Voltage (Vgs)3.5V
- Drain to Source Breakdown Voltage25V
- FET TechnologyJUNCTION
- Current - Drain (Idss) @ Vds (Vgs=0)2mA @ 15V
- Voltage - Cutoff (VGS off) @ Id1V @ 10nA
- REACH SVHCNo SVHC
- RoHS StatusNon-RoHS Compliant
- Lead FreeLead Free
2N5458 Description
N?Channel Junction Field Effect Transistors, depletion-mode
(Type A) designed for audio and switching applications.
2N5458 Features N?Channel for Higher Gain Drain and Source Interchangeable High AC Input Impedance High DC Input Resistance Low Transfer and Input Capacitance Low Cross?Modulation and Intermodulation Distortion Plastic Encapsulated Package Pb?Free Packages are Available*
2N5458 Features N?Channel for Higher Gain Drain and Source Interchangeable High AC Input Impedance High DC Input Resistance Low Transfer and Input Capacitance Low Cross?Modulation and Intermodulation Distortion Plastic Encapsulated Package Pb?Free Packages are Available*
2N5458 More Descriptions
Small Signal Field-Effect Transistor, 25V, 1-Element, N-Channel, Silicon, Junction FET, TO-92
This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55.
TRANSISTOR, JFET, N, TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:25V; Zero Gate Voltage Drain Current Idss:2mA to 9mA; Gate-Source Cutoff Voltage Vgs(off) Max:7V; Power Dissipation Pd:625mW; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Idss Max:9mA; Current Idss Min:2mA; Package / Case:TO-92; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Termination Type:Through Hole; Transistor Polarity:N Channel
RF JFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:9mA; Power Dissipation, Pd:0.625W; Package/Case:TO-92; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Breakdown Voltage, V(br)gss:-25V ;RoHS Compliant: Yes
This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55.
TRANSISTOR, JFET, N, TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:25V; Zero Gate Voltage Drain Current Idss:2mA to 9mA; Gate-Source Cutoff Voltage Vgs(off) Max:7V; Power Dissipation Pd:625mW; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Idss Max:9mA; Current Idss Min:2mA; Package / Case:TO-92; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Termination Type:Through Hole; Transistor Polarity:N Channel
RF JFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:9mA; Power Dissipation, Pd:0.625W; Package/Case:TO-92; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Breakdown Voltage, V(br)gss:-25V ;RoHS Compliant: Yes
The three parts on the right have similar specifications to 2N5458.
-
ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsElement ConfigurationOperating ModePower DissipationPower - MaxFET TypeTransistor ApplicationInput Capacitance (Ciss) (Max) @ VdsBreakdown VoltageContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET TechnologyCurrent - Drain (Idss) @ Vds (Vgs=0)Voltage - Cutoff (VGS off) @ IdREACH SVHCRoHS StatusLead FreeVoltage - Cutoff (VGS off) @ Id:Voltage - Breakdown (V(BR)GSS):Supplier Device Package:Series:Resistance - RDS(On):Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:FET Type:Drain to Source Voltage (Vdss):Current - Drain (Idss) @ Vds (Vgs=0):View Compare
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2N5458LAST SHIPMENTS (Last Updated: 1 week ago)Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3201mgSILICON135°C TJBulk2006e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)LOW NOISE8541.21.00.95Other Transistors25V625mWBOTTOM240not_compliant10mA302N54583Not Qualified1SingleDEPLETION MODE625mW310mWN-ChannelSWITCHING7pF @ 15V25V9mA3.5V25VJUNCTION2mA @ 15V1V @ 10nANo SVHCNon-RoHS CompliantLead Free---------------
-
------------------------------------------------1V @ 1µA40VTO-92-3--350mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole7pF @ 15VP-Channel-2mA @ 15V
-
------------------------------------------------500mV @ 10nA25VTO-92-3--625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole7pF @ 15VN-Channel-1mA @ 15V
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------------------------------------------------1.8V @ 1µA40VTO-92-3--350mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole7pF @ 15VP-Channel-4mA @ 15V
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