Diodes Incorporated 2DC4617S-7-F
- Part Number:
- 2DC4617S-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2464669-2DC4617S-7-F
- Description:
- TRANS NPN 50V 0.15A SOT523
- Datasheet:
- 2DC4617S-7-F
Diodes Incorporated 2DC4617S-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated 2DC4617S-7-F.
- Factory Lead Time19 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-523
- Number of Pins3
- Weight2.012816mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC50V
- Max Power Dissipation150mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating150mA
- Frequency180MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2DC4617
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation150mW
- Gain Bandwidth Product180MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current150mA
- DC Current Gain (hFE) (Min) @ Ic, Vce270 @ 1mA 6V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency180MHz
- Collector Emitter Saturation Voltage400mV
- Max Breakdown Voltage50V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)7V
- Height750μm
- Length1.6mm
- Width800μm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2DC4617S-7-F Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 270 @ 1mA 6V DC current gain.As it features a collector emitter saturation voltage of 400mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 180MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 150mA volts.
2DC4617S-7-F Features
the DC current gain for this device is 270 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 180MHz
2DC4617S-7-F Applications
There are a lot of Diodes Incorporated
2DC4617S-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 270 @ 1mA 6V DC current gain.As it features a collector emitter saturation voltage of 400mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 180MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 150mA volts.
2DC4617S-7-F Features
the DC current gain for this device is 270 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 180MHz
2DC4617S-7-F Applications
There are a lot of Diodes Incorporated
2DC4617S-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2DC4617S-7-F More Descriptions
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2DC4617 Series PNP 60 V 150 mA SMT Small Signal Transistor - SOT-523
Trans, Npn, 50V, 0.15A, 150Deg C, 0.15W Rohs Compliant: Yes |Diodes Inc. 2DC4617S-7-F
Trans GP BJT NPN 50V 0.15A 150mW 3-Pin SOT-523 T/R
2DC4617 Series PNP 60 V 150 mA SMT Small Signal Transistor - SOT-523
Trans, Npn, 50V, 0.15A, 150Deg C, 0.15W Rohs Compliant: Yes |Diodes Inc. 2DC4617S-7-F
Trans GP BJT NPN 50V 0.15A 150mW 3-Pin SOT-523 T/R
The three parts on the right have similar specifications to 2DC4617S-7-F.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreehFE MinContinuous Collector CurrentView Compare
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2DC4617S-7-F19 WeeksSurface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors50V150mWDUALGULL WING260150mA180MHz402DC461731Single150mW180MHzNPNNPN50V150mA270 @ 1mA 6V100nA ICBO400mV @ 5mA, 50mA50V180MHz400mV50V60V7V750μm1.6mm800μmNo SVHCNoROHS3 CompliantLead Free---
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19 WeeksSurface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors50V150mWDUALGULL WING260150mA180MHz402DC461731Single150mW180MHzNPNNPN50V150mA180 @ 1mA 6V100nA ICBO400mV @ 5mA, 50mA50V180MHz400mV50V60V7V750μm1.6mm800μmNo SVHCNoROHS3 CompliantLead Free180150mA
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19 WeeksSurface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors50V150mWDUALGULL WING260150mA180MHz402DC461731Single150mW180MHzNPNNPN50V150mA120 @ 1mA 6V100nA ICBO400mV @ 5mA, 50mA50V180MHz400mV50V60V7V750μm1.6mm800μmNo SVHCNoROHS3 CompliantLead Free--
-
19 WeeksSurface MountSurface Mount3-UFDFN3---55°C~150°C TJTape & Reel (TR)2015e4-Active1 (Unlimited)-EAR99Nickel/Palladium/Gold (Ni/Pd/Au)--250mW--260--302DC4617--Single-100MHz-NPN50V100mA120 @ 1mA 6V100nA ICBO200mV @ 5mA, 50mA50V-200mV50V50V5V---No SVHCNoROHS3 CompliantLead Free-100mA
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