Diodes Incorporated 2DC4617Q-7-F
- Part Number:
- 2DC4617Q-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2464605-2DC4617Q-7-F
- Description:
- TRANS NPN 50V 0.15A SOT523
- ECAD Model:
-
- Datasheet:
- 2DC4617Q-7-F
Diodes Incorporated 2DC4617Q-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated 2DC4617Q-7-F.
- Factory Lead Time19 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-523
- Number of Pins3
- Weight2.012816mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC50V
- Max Power Dissipation150mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating150mA
- Frequency180MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2DC4617
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation150mW
- Gain Bandwidth Product180MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current150mA
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA 6V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency180MHz
- Collector Emitter Saturation Voltage400mV
- Max Breakdown Voltage50V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)7V
- Height750μm
- Length1.6mm
- Width800μm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2DC4617Q-7-F Overview
This device has a DC current gain of 120 @ 1mA 6V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 400mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 150mA.In this part, there is a transition frequency of 180MHz.As a result, it can handle voltages as low as 50V volts.The maximum collector current is 150mA volts.
2DC4617Q-7-F Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 180MHz
2DC4617Q-7-F Applications
There are a lot of Diodes Incorporated
2DC4617Q-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 120 @ 1mA 6V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 400mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 150mA.In this part, there is a transition frequency of 180MHz.As a result, it can handle voltages as low as 50V volts.The maximum collector current is 150mA volts.
2DC4617Q-7-F Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 180MHz
2DC4617Q-7-F Applications
There are a lot of Diodes Incorporated
2DC4617Q-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2DC4617Q-7-F More Descriptions
2DC4617Q Series SOT-523 50V 0.15A BJT NPN Surface Mount Bipolar Transistor
Trans GP BJT NPN 50V 0.15A 150mW Automotive 3-Pin SOT-523 T/R
Transistor Polarity:NPN; Collector Emitter Voltage Max:50V; Continuous Collector Current:150mA; Power Dissipation:150mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:180MHz; Product Range:-; MSL:- RoHS Compliant: Yes
Trans GP BJT NPN 50V 0.15A 150mW Automotive 3-Pin SOT-523 T/R
Transistor Polarity:NPN; Collector Emitter Voltage Max:50V; Continuous Collector Current:150mA; Power Dissipation:150mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:180MHz; Product Range:-; MSL:- RoHS Compliant: Yes
The three parts on the right have similar specifications to 2DC4617Q-7-F.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreehFE MinContinuous Collector CurrentMax Operating TemperatureMin Operating TemperatureReach Compliance CodeQualification StatusPolarityDC Current Gain-Min (hFE)View Compare
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2DC4617Q-7-F19 WeeksSurface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors50V150mWDUALGULL WING260150mA180MHz402DC461731Single150mW180MHzNPNNPN50V150mA120 @ 1mA 6V100nA ICBO400mV @ 5mA, 50mA50V180MHz400mV50V60V7V750μm1.6mm800μmNo SVHCNoROHS3 CompliantLead Free--------- -
19 WeeksSurface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors50V150mWDUALGULL WING260150mA180MHz402DC461731Single150mW180MHzNPNNPN50V150mA180 @ 1mA 6V100nA ICBO400mV @ 5mA, 50mA50V180MHz400mV50V60V7V750μm1.6mm800μmNo SVHCNoROHS3 CompliantLead Free180150mA------
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19 WeeksSurface MountSurface Mount3-UFDFN3---55°C~150°C TJTape & Reel (TR)2015e4-Active1 (Unlimited)-EAR99Nickel/Palladium/Gold (Ni/Pd/Au)--250mW--260--302DC4617--Single-100MHz-NPN50V100mA120 @ 1mA 6V100nA ICBO200mV @ 5mA, 50mA50V-200mV50V50V5V---No SVHCNoROHS3 CompliantLead Free-100mA------
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-Surface Mount-SOT-52332.012816mg--Tape & Reel (TR)2007e0-Discontinued1 (Unlimited)3EAR99Tin/Lead (Sn85Pb15)Other Transistors50V150mWDUALGULL WING235150mA-10-31Single-180MHz--400mV150mA---50V180MHz-50V60V7V750μm1.6mm800μmNo SVHC-ROHS3 CompliantContains Lead270-150°C-55°Cnot_compliantNot QualifiedNPN270
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