Diodes Incorporated 2DC4617R-7-F
- Part Number:
- 2DC4617R-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2464628-2DC4617R-7-F
- Description:
- TRANS NPN 50V 0.15A SOT523
- Datasheet:
- 2DC4617R-7-F
Diodes Incorporated 2DC4617R-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated 2DC4617R-7-F.
- Factory Lead Time19 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-523
- Number of Pins3
- Weight2.012816mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC50V
- Max Power Dissipation150mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating150mA
- Frequency180MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2DC4617
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation150mW
- Gain Bandwidth Product180MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current150mA
- DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 1mA 6V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency180MHz
- Collector Emitter Saturation Voltage400mV
- Max Breakdown Voltage50V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)7V
- hFE Min180
- Continuous Collector Current150mA
- Height750μm
- Length1.6mm
- Width800μm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2DC4617R-7-F Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 1mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.Single BJT transistor is recommended to keep the continuous collector voltage at 150mA in order to achieve high efficiency.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 150mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 180MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.
2DC4617R-7-F Features
the DC current gain for this device is 180 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 180MHz
2DC4617R-7-F Applications
There are a lot of Diodes Incorporated
2DC4617R-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 1mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.Single BJT transistor is recommended to keep the continuous collector voltage at 150mA in order to achieve high efficiency.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 150mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 180MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.
2DC4617R-7-F Features
the DC current gain for this device is 180 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 180MHz
2DC4617R-7-F Applications
There are a lot of Diodes Incorporated
2DC4617R-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2DC4617R-7-F More Descriptions
2DC46 Series NPN 150 W 50 V 150 mA SMT Small Signal Transistor - SOT-523
Trans GP BJT NPN 50V 0.15A 150mW Automotive 3-Pin SOT-523 T/R
Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:50V; Dc Collector Current:150Ma; Power Dissipation Pd:150Mw; Transistor Mounting:surface Mount; No. Of Pins:3Pins; Transition Frequency Ft:180Mhz; Dc Current Gain Hfe:180Hferohs Compliant: Yes
Trans GP BJT NPN 50V 0.15A 150mW Automotive 3-Pin SOT-523 T/R
Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:50V; Dc Collector Current:150Ma; Power Dissipation Pd:150Mw; Transistor Mounting:surface Mount; No. Of Pins:3Pins; Transition Frequency Ft:180Mhz; Dc Current Gain Hfe:180Hferohs Compliant: Yes
The three parts on the right have similar specifications to 2DC4617R-7-F.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMax Operating TemperatureMin Operating TemperatureReach Compliance CodeQualification StatusPolarityDC Current Gain-Min (hFE)View Compare
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2DC4617R-7-F19 WeeksSurface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors50V150mWDUALGULL WING260150mA180MHz402DC461731Single150mW180MHzNPNNPN50V150mA180 @ 1mA 6V100nA ICBO400mV @ 5mA, 50mA50V180MHz400mV50V60V7V180150mA750μm1.6mm800μmNo SVHCNoROHS3 CompliantLead Free-------
-
19 WeeksSurface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors50V150mWDUALGULL WING260150mA180MHz402DC461731Single150mW180MHzNPNNPN50V150mA270 @ 1mA 6V100nA ICBO400mV @ 5mA, 50mA50V180MHz400mV50V60V7V--750μm1.6mm800μmNo SVHCNoROHS3 CompliantLead Free------
-
19 WeeksSurface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors50V150mWDUALGULL WING260150mA180MHz402DC461731Single150mW180MHzNPNNPN50V150mA120 @ 1mA 6V100nA ICBO400mV @ 5mA, 50mA50V180MHz400mV50V60V7V--750μm1.6mm800μmNo SVHCNoROHS3 CompliantLead Free------
-
-Surface Mount-SOT-52332.012816mg--Tape & Reel (TR)2007e0-Discontinued1 (Unlimited)3EAR99Tin/Lead (Sn85Pb15)Other Transistors50V150mWDUALGULL WING235150mA-10-31Single-180MHz--400mV150mA---50V180MHz-50V60V7V270-750μm1.6mm800μmNo SVHC-ROHS3 CompliantContains Lead150°C-55°Cnot_compliantNot QualifiedNPN270
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