Macronix MX30LF4GE8AB-TI
- Part Number:
- MX30LF4GE8AB-TI
- Manufacturer:
- Macronix
- Ventron No:
- 7372481-MX30LF4GE8AB-TI
- Description:
- Memory IC 18.4mm mm
- Datasheet:
- MX30LF4GE8AB-TI
Macronix MX30LF4GE8AB-TI technical specifications, attributes, parameters and parts with similar specifications to Macronix MX30LF4GE8AB-TI.
- Factory Lead Time8 Weeks
- Surface MountYES
- PackagingTray
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- Terminal FinishMATTE TIN
- TechnologyCMOS
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.5mm
- Time@Peak Reflow Temperature-Max (s)40
- JESD-30 CodeR-PDSO-G48
- Operating Temperature (Max)85°C
- Operating Temperature (Min)-40°C
- Supply Voltage-Max (Vsup)3.6V
- Temperature GradeINDUSTRIAL
- Supply Voltage-Min (Vsup)2.7V
- Operating ModeASYNCHRONOUS
- Organization512MX8
- Memory Width8
- Memory Density4294967296 bit
- Parallel/SerialPARALLEL
- Memory IC TypeFLASH
- Programming Voltage2.7V
- Length18.4mm
- Height Seated (Max)1.2mm
- Width12mm
- RoHS StatusRoHS Compliant
MX30LF4GE8AB-TI Overview
It comes in a Tray. 48 terminations are planted on the chip. This part supports as many as 1 functions for the comprehensive working procedure. This ic memory chip is designed to be supplied with 3V. To alter the state of certain nonvolatile memory arrays, 2.7V programming voltage is required. The memory IC type of this chip is FLASH. It should only be used at temperatures greater than 85°C. The part is used to operate at a temperature of -40°C. This device is what we generally refer to as a NAND TYPE.
MX30LF4GE8AB-TI Features
MX30LF4GE8AB-TI Applications
There are a lot of Macronix
MX30LF4GE8AB-TI Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
It comes in a Tray. 48 terminations are planted on the chip. This part supports as many as 1 functions for the comprehensive working procedure. This ic memory chip is designed to be supplied with 3V. To alter the state of certain nonvolatile memory arrays, 2.7V programming voltage is required. The memory IC type of this chip is FLASH. It should only be used at temperatures greater than 85°C. The part is used to operate at a temperature of -40°C. This device is what we generally refer to as a NAND TYPE.
MX30LF4GE8AB-TI Features
MX30LF4GE8AB-TI Applications
There are a lot of Macronix
MX30LF4GE8AB-TI Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
MX30LF4GE8AB-TI More Descriptions
MX30LF4GE8 Series 4 Gb (512 M x 8) 3.6 V Surface Mount NAND Memory Flash-TSOP-48
IC FLASH 4GBIT PARALLEL 48TSOP
TSOP-48 NAND FLASH ROHS
OEMs, CMs ONLY (NO BROKERS)
IC FLASH 4GBIT PARALLEL 48TSOP
TSOP-48 NAND FLASH ROHS
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to MX30LF4GE8AB-TI.
-
ImagePart NumberManufacturerFactory Lead TimeSurface MountPackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeOperating Temperature (Max)Operating Temperature (Min)Supply Voltage-Max (Vsup)Temperature GradeSupply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityParallel/SerialMemory IC TypeProgramming VoltageLengthHeight Seated (Max)WidthRoHS StatusPublishedECCN CodeHTS CodeLead FreeView Compare
-
MX30LF4GE8AB-TI8 WeeksYESTraye3Active3 (168 Hours)48MATTE TINCMOSDUALGULL WING26013V0.5mm40R-PDSO-G4885°C-40°C3.6VINDUSTRIAL2.7VASYNCHRONOUS512MX884294967296 bitPARALLELFLASH2.7V18.4mm1.2mm12mmRoHS Compliant-----
-
8 WeeksYESTray-Active-48-CMOSDUALGULL WING-13.3V0.5mm-R-PDSO-G4885°C-40°C3.6VINDUSTRIAL2.7VASYNCHRONOUS256MX882147483648 bitPARALLELFLASH3V18.4mm1.2mm12mm-----
-
-YESTraye1Not For New Designs-63Tin/Silver/Copper (Sn/Ag/Cu)CMOSBOTTOMBALL26011.8V0.8mm40R-PBGA-B6385°C-40°C1.95VINDUSTRIAL1.7VASYNCHRONOUS512MX884294967296 bitPARALLELFLASH1.8V11mm1mm9mmNon-RoHS Compliant20143A991.B.1.A8542.32.00.51Lead Free
-
-YESTraye3Not For New Designs3 (168 Hours)48Matte Tin (Sn)CMOSDUALGULL WING26011.8V0.5mm40R-PDSO-G4885°C-40°C1.95VINDUSTRIAL1.7VASYNCHRONOUS512MX884294967296 bitPARALLELFLASH1.8V18.4mm1.2mm12mmRoHS Compliant-3A991.B.1.A8542.32.00.51-
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