Macronix MX30LF2GE8AB-TI
- Part Number:
- MX30LF2GE8AB-TI
- Manufacturer:
- Macronix
- Ventron No:
- 7372415-MX30LF2GE8AB-TI
- Description:
- Memory IC 18.4mm mm
- Datasheet:
- MX30LF2GE8AB-TI
Macronix MX30LF2GE8AB-TI technical specifications, attributes, parameters and parts with similar specifications to Macronix MX30LF2GE8AB-TI.
- Factory Lead Time8 Weeks
- Surface MountYES
- PackagingTray
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- Terminal FinishMATTE TIN
- TechnologyCMOS
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.5mm
- Time@Peak Reflow Temperature-Max (s)40
- JESD-30 CodeR-PDSO-G48
- Operating Temperature (Max)85°C
- Operating Temperature (Min)-40°C
- Supply Voltage-Max (Vsup)3.6V
- Temperature GradeINDUSTRIAL
- Supply Voltage-Min (Vsup)2.7V
- Operating ModeASYNCHRONOUS
- Organization256MX8
- Memory Width8
- Memory Density2147483648 bit
- Parallel/SerialPARALLEL
- Memory IC TypeFLASH
- Programming Voltage2.7V
- Length18.4mm
- Height Seated (Max)1.2mm
- Width12mm
- RoHS StatusNon-RoHS Compliant
MX30LF2GE8AB-TI Overview
The case comes in Tray size. On the chip, there are 48 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 3V is required for the operation of this memory device. A programming voltage of 2.7V is required to alter the state of certain nonvolatile memory arrays. FLASH is the type of memory IC in this chip. Using ic memory chip above 85°C is recommended. Ic memory chip is designed to operate at a temperature of -40°C, otherwise the part will malfunctionWe generally refer to this device as a NAND TYPE device because that is what we call it in the industry.
MX30LF2GE8AB-TI Features
MX30LF2GE8AB-TI Applications
There are a lot of Macronix
MX30LF2GE8AB-TI Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
The case comes in Tray size. On the chip, there are 48 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 3V is required for the operation of this memory device. A programming voltage of 2.7V is required to alter the state of certain nonvolatile memory arrays. FLASH is the type of memory IC in this chip. Using ic memory chip above 85°C is recommended. Ic memory chip is designed to operate at a temperature of -40°C, otherwise the part will malfunctionWe generally refer to this device as a NAND TYPE device because that is what we call it in the industry.
MX30LF2GE8AB-TI Features
MX30LF2GE8AB-TI Applications
There are a lot of Macronix
MX30LF2GE8AB-TI Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
MX30LF2GE8AB-TI More Descriptions
SLC NAND Flash Parallel 3.3V 2Gbit 256M x 8bit 25ns 48-Pin TSOP
IC FLASH 2GBIT PARALLEL 48TSOP
Product Description Demo for Development.
IC FLASH 2GBIT PARALLEL 48TSOP
Product Description Demo for Development.
The three parts on the right have similar specifications to MX30LF2GE8AB-TI.
-
ImagePart NumberManufacturerFactory Lead TimeSurface MountPackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeOperating Temperature (Max)Operating Temperature (Min)Supply Voltage-Max (Vsup)Temperature GradeSupply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityParallel/SerialMemory IC TypeProgramming VoltageLengthHeight Seated (Max)WidthRoHS StatusPublishedECCN CodeHTS CodeLead FreeView Compare
-
MX30LF2GE8AB-TI8 WeeksYESTraye3Active3 (168 Hours)48MATTE TINCMOSDUALGULL WING26013V0.5mm40R-PDSO-G4885°C-40°C3.6VINDUSTRIAL2.7VASYNCHRONOUS256MX882147483648 bitPARALLELFLASH2.7V18.4mm1.2mm12mmNon-RoHS Compliant-----
-
8 WeeksYESTray-Active-48-CMOSBOTTOMBALL26011.8V0.8mm40R-PBGA-B4885°C-40°C1.95VINDUSTRIAL1.7VASYNCHRONOUS128MX16162147483648 bitPARALLELFLASH1.8V8mm1mm6mmRoHS Compliant----
-
-YESTraye1Not For New Designs-63Tin/Silver/Copper (Sn/Ag/Cu)CMOSBOTTOMBALL26011.8V0.8mm40R-PBGA-B6385°C-40°C1.95VINDUSTRIAL1.7VASYNCHRONOUS512MX884294967296 bitPARALLELFLASH1.8V11mm1mm9mmNon-RoHS Compliant20143A991.B.1.A8542.32.00.51Lead Free
-
8 WeeksYESTraye3Active3 (168 Hours)48MATTE TINCMOSDUALGULL WING26013V0.5mm40R-PDSO-G4885°C-40°C3.6VINDUSTRIAL2.7VASYNCHRONOUS512MX884294967296 bitPARALLELFLASH2.7V18.4mm1.2mm12mmRoHS Compliant----
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