Macronix MX30LF1GE8AB-TI
- Part Number:
- MX30LF1GE8AB-TI
- Manufacturer:
- Macronix
- Ventron No:
- 7372029-MX30LF1GE8AB-TI
- Description:
- Memory IC 18.4mm mm
- Datasheet:
- MX30LF1GE8AB-TI
Macronix MX30LF1GE8AB-TI technical specifications, attributes, parameters and parts with similar specifications to Macronix MX30LF1GE8AB-TI.
- Factory Lead Time8 Weeks
- Surface MountYES
- PackagingTray
- Published2015
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- Terminal FinishMatte Tin (Sn)
- TechnologyCMOS
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.5mm
- Time@Peak Reflow Temperature-Max (s)40
- JESD-30 CodeR-PDSO-G48
- Operating Temperature (Max)85°C
- Operating Temperature (Min)-40°C
- Supply Voltage-Max (Vsup)3.6V
- Temperature GradeINDUSTRIAL
- Supply Voltage-Min (Vsup)2.7V
- Operating ModeASYNCHRONOUS
- Organization128MX8
- Memory Width8
- Memory Density1073741824 bit
- Parallel/SerialPARALLEL
- Memory IC TypeFLASH
- Programming Voltage2.7V
- Length18.4mm
- Height Seated (Max)1.2mm
- Width12mm
- RoHS StatusNon-RoHS Compliant
MX30LF1GE8AB-TI Overview
Case Tray is available. It is planted on the chip with 48 terminations. It supports up to 1 functions for comprehensive operation. There is a requirement for 3V to be supplied to this ic memory chip in order to operate. Nonvolatile memory arrays require 2.7V programming voltages to change their states. A FLASH-type memory IC is used in this chip. Temperatures above 85°C are the only conditions for its use. This part is required to be operated at a temperature at -40°C, otherwise it won't work. Generally speaking, a NAND TYPE device is what we refer to as a wireless communication device.
MX30LF1GE8AB-TI Features
MX30LF1GE8AB-TI Applications
There are a lot of Macronix
MX30LF1GE8AB-TI Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
Case Tray is available. It is planted on the chip with 48 terminations. It supports up to 1 functions for comprehensive operation. There is a requirement for 3V to be supplied to this ic memory chip in order to operate. Nonvolatile memory arrays require 2.7V programming voltages to change their states. A FLASH-type memory IC is used in this chip. Temperatures above 85°C are the only conditions for its use. This part is required to be operated at a temperature at -40°C, otherwise it won't work. Generally speaking, a NAND TYPE device is what we refer to as a wireless communication device.
MX30LF1GE8AB-TI Features
MX30LF1GE8AB-TI Applications
There are a lot of Macronix
MX30LF1GE8AB-TI Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
MX30LF1GE8AB-TI More Descriptions
1Gb (128M x 8) Parallel 20 ns FLASH NAND Memory IC - TSOP-48
SLC NAND Flash Parallel 3.3V 1Gbit 128M x 8bit 48-Pin TSOP-I
R-PDSO-G48 INDUSTRIAL Tray 128MX8 ic memory 12mm 1073741824bit 2.7V 85C
SLC NAND Flash Parallel 3.3V 1Gbit 128M x 8bit 48-Pin TSOP-I
R-PDSO-G48 INDUSTRIAL Tray 128MX8 ic memory 12mm 1073741824bit 2.7V 85C
The three parts on the right have similar specifications to MX30LF1GE8AB-TI.
-
ImagePart NumberManufacturerFactory Lead TimeSurface MountPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeOperating Temperature (Max)Operating Temperature (Min)Supply Voltage-Max (Vsup)Temperature GradeSupply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityParallel/SerialMemory IC TypeProgramming VoltageLengthHeight Seated (Max)WidthRoHS StatusMounting TypePackage / CaseOperating TemperatureSeriesVoltage - SupplyMemory SizeMemory TypeAccess TimeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageView Compare
-
MX30LF1GE8AB-TI8 WeeksYESTray2015e3Active3 (168 Hours)48Matte Tin (Sn)CMOSDUALGULL WING26013V0.5mm40R-PDSO-G4885°C-40°C3.6VINDUSTRIAL2.7VASYNCHRONOUS128MX881073741824 bitPARALLELFLASH2.7V18.4mm1.2mm12mmNon-RoHS Compliant------------
-
8 Weeks-Tray--Active---------------------------------------
-
8 WeeksYESTray-e3Active3 (168 Hours)48Matte Tin (Sn)CMOSDUALGULL WING26011.8V0.5mm40R-PDSO-G4885°C-40°C1.95VINDUSTRIAL1.7VASYNCHRONOUS256MX882147483648 bitPARALLELFLASH1.8V18.4mm1.2mm12mmRoHS Compliant-----------
-
8 WeeksYESTape & Reel (TR)--Active3 (168 Hours)63-FLASH - NAND (SLC)BOTTOM--11.8V0.8mm-R-PBGA-B63--1.95V-1.7VASYNCHRONOUS256MX16164294967296 bit--1.8V11mm1mm9mmROHS3 CompliantSurface Mount63-VFBGA-40°C~85°C TAMXSMIO™1.7V~1.95V4Gb 256M x 16Non-Volatile25nsFLASHParallel600μs, 25ns
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