ISSI, Integrated Silicon Solution Inc IS43TR82560D-107MBL
- Part Number:
- IS43TR82560D-107MBL
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 7372731-IS43TR82560D-107MBL
- Description:
- Memory IC 10.5mm mm
- Datasheet:
- IS43TR82560D-107MBL
ISSI, Integrated Silicon Solution Inc IS43TR82560D-107MBL technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS43TR82560D-107MBL.
- Factory Lead Time8 Weeks
- Surface MountYES
- PackagingTray
- JESD-609 Codee1
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations78
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAUTO/SELF REFRESH
- TechnologyCMOS
- Terminal PositionBOTTOM
- Terminal FormBALL
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage1.5V
- Terminal Pitch0.8mm
- Time@Peak Reflow Temperature-Max (s)10
- JESD-30 CodeR-PBGA-B78
- Operating Temperature (Max)95°C
- Supply Voltage-Max (Vsup)1.575V
- Temperature GradeOTHER
- Supply Voltage-Min (Vsup)1.425V
- Number of Ports1
- Operating ModeSYNCHRONOUS
- Organization256MX8
- Memory Width8
- Memory Density2147483648 bit
- Memory IC TypeDDR DRAM
- Access ModeMULTI BANK PAGE BURST
- Length10.5mm
- Height Seated (Max)1.2mm
- Width8mm
- RoHS StatusROHS3 Compliant
IS43TR82560D-107MBL Overview
It is available in a case with a Tray shape. As you can see from the diagram, the chip is planted with 78 terminations. In total, 1 functions are supported by this part. The memory device designed for this application has been designed to be powered by an 1.5V power supply. While this memory chip features many merits, it also offers AUTO/SELF REFRESH for improving system performance. An address can be read and/or written to one memory address using 1 ports on the chip. It has a DDR DRAM memory IC type. If the temperature is greater than 95°C, you should not use it.
IS43TR82560D-107MBL Features
Additional Feature:AUTO/SELF REFRESH
IS43TR82560D-107MBL Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43TR82560D-107MBL Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
It is available in a case with a Tray shape. As you can see from the diagram, the chip is planted with 78 terminations. In total, 1 functions are supported by this part. The memory device designed for this application has been designed to be powered by an 1.5V power supply. While this memory chip features many merits, it also offers AUTO/SELF REFRESH for improving system performance. An address can be read and/or written to one memory address using 1 ports on the chip. It has a DDR DRAM memory IC type. If the temperature is greater than 95°C, you should not use it.
IS43TR82560D-107MBL Features
Additional Feature:AUTO/SELF REFRESH
IS43TR82560D-107MBL Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43TR82560D-107MBL Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
IS43TR82560D-107MBL More Descriptions
Active BALL DDR DRAM BOTTOM ic memory 95C 1.425V 2147483648bit 8mm
DRAM Chip DDR3 SDRAM 2Gbit 256M X 8 1.5V 78-Pin TWBGA
DDR SDRAM, 256Mx8, 1.5V, 8K, BGA-78,RoHSISSI SCT
256Mx8, 128Mx16 2Gb DDR3 SDRAM
2G, 1.5V, Ddr3L, 256Mx8, 1866Mt/S @ 13-13-13, 78 Ball Bga (8Mm X10.5Mm) Rohs, It |Integrated Silicon Solution (Issi) IS43TR82560D-107MBL
DRAM Chip DDR3 SDRAM 2Gbit 256M X 8 1.5V 78-Pin TWBGA
DDR SDRAM, 256Mx8, 1.5V, 8K, BGA-78,RoHSISSI SCT
256Mx8, 128Mx16 2Gb DDR3 SDRAM
2G, 1.5V, Ddr3L, 256Mx8, 1866Mt/S @ 13-13-13, 78 Ball Bga (8Mm X10.5Mm) Rohs, It |Integrated Silicon Solution (Issi) IS43TR82560D-107MBL
The three parts on the right have similar specifications to IS43TR82560D-107MBL.
-
ImagePart NumberManufacturerFactory Lead TimeSurface MountPackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeOperating Temperature (Max)Supply Voltage-Max (Vsup)Temperature GradeSupply Voltage-Min (Vsup)Number of PortsOperating ModeOrganizationMemory WidthMemory DensityMemory IC TypeAccess ModeLengthHeight Seated (Max)WidthRoHS StatusMounting TypePackage / CaseOperating TemperatureVoltage - SupplyMemory SizeMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageECCN CodeView Compare
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IS43TR82560D-107MBL8 WeeksYESTraye1Active3 (168 Hours)78Tin/Silver/Copper (Sn/Ag/Cu)AUTO/SELF REFRESHCMOSBOTTOMBALL26011.5V0.8mm10R-PBGA-B7895°C1.575VOTHER1.425V1SYNCHRONOUS256MX882147483648 bitDDR DRAMMULTI BANK PAGE BURST10.5mm1.2mm8mmROHS3 Compliant-------------
-
8 Weeks-Tape & Reel (TR)-Active3 (168 Hours)---SDRAM - DDR2----------------------ROHS3 CompliantSurface Mount60-TFBGA-40°C~85°C TA1.7V~1.9V2Gb 256M x 8Volatile400MHz400psDRAMParallel15ns-
-
8 Weeks-Tape & Reel (TR)-Active3 (168 Hours)---SDRAM - DDR2----------------------ROHS3 CompliantSurface Mount60-TFBGA-40°C~85°C TA1.7V~1.9V2Gb 256M x 8Volatile333MHz450psDRAMParallel15ns-
-
8 WeeksYESTray-Active3 (168 Hours)60-PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM - DDRBOTTOM-NOT SPECIFIED12.5V1mmNOT SPECIFIEDR-PBGA-B60-2.7V-2.3V1SYNCHRONOUS32MX1616536870912 bit--13mm1.2mm8mmROHS3 CompliantSurface Mount60-TFBGA-40°C~85°C TA2.3V~2.7V512Mb 32M x 16Volatile166MHz700psDRAMParallel15nsEAR99
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