ISSI, Integrated Silicon Solution Inc IS43DR16160A-3DBL-TR
- Part Number:
- IS43DR16160A-3DBL-TR
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 7375779-IS43DR16160A-3DBL-TR
- Description:
- 1.8V V Memory IC 12.5mm mm
- Datasheet:
- IS43/46DR83200A, 16160A
ISSI, Integrated Silicon Solution Inc IS43DR16160A-3DBL-TR technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS43DR16160A-3DBL-TR.
- Mounting TypeSurface Mount
- Package / Case84-TFBGA
- Surface MountYES
- Number of Pins84
- Operating Temperature0°C~70°C TA
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations84
- Additional FeatureAUTO/SELF REFRESH
- TechnologySDRAM - DDR2
- Voltage - Supply1.7V~1.9V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.8mm
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)1.9V
- Power Supplies1.8V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size256Mb 16M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency333MHz
- Supply Current-Max0.33mA
- Access Time450ps
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width16b
- Organization16MX16
- Output Characteristics3-STATE
- Memory Width16
- Write Cycle Time - Word, Page15ns
- Standby Current-Max0.005A
- I/O TypeCOMMON
- Refresh Cycles8192
- Sequential Burst Length48
- Interleaved Burst Length48
- Length12.5mm
- Height Seated (Max)1.2mm
- RoHS StatusRoHS Compliant
IS43DR16160A-3DBL-TR Overview
In terms of its memory type, it can be classified as Volatile. The case comes in Tape & Reel (TR) size. The case is embedded in 84-TFBGA. Memory size on the chip is 256Mb 16M x 16. This device uses takes advantage of the DRAM format. The device's extended operating temperature range of 0°C~70°C TA makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 1.7V~1.9V. The recommended mounting type for this device is Surface Mount. On the chip, there are 84 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 1.8V is required for the operation of this memory device. There is a clock frequency rotation of the memory within a 333MHz range. An 84-pin package is used to package this memory device. It also features AUTO/SELF REFRESH to boost system performance despite all its merits. In this chip, there are 1 ports providing read and/or write access to one memory address. This memory chip requires only 1.8V of power. A memory mapped I/O port address of COMMON bits is used in this device. With a maximum supply current of 0.33mA , it is able to operate from a variety of supplies.
IS43DR16160A-3DBL-TR Features
Package / Case: 84-TFBGA
84 Pins
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
IS43DR16160A-3DBL-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43DR16160A-3DBL-TR Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
In terms of its memory type, it can be classified as Volatile. The case comes in Tape & Reel (TR) size. The case is embedded in 84-TFBGA. Memory size on the chip is 256Mb 16M x 16. This device uses takes advantage of the DRAM format. The device's extended operating temperature range of 0°C~70°C TA makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 1.7V~1.9V. The recommended mounting type for this device is Surface Mount. On the chip, there are 84 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 1.8V is required for the operation of this memory device. There is a clock frequency rotation of the memory within a 333MHz range. An 84-pin package is used to package this memory device. It also features AUTO/SELF REFRESH to boost system performance despite all its merits. In this chip, there are 1 ports providing read and/or write access to one memory address. This memory chip requires only 1.8V of power. A memory mapped I/O port address of COMMON bits is used in this device. With a maximum supply current of 0.33mA , it is able to operate from a variety of supplies.
IS43DR16160A-3DBL-TR Features
Package / Case: 84-TFBGA
84 Pins
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
IS43DR16160A-3DBL-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43DR16160A-3DBL-TR Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
IS43DR16160A-3DBL-TR More Descriptions
256M, 1.8V, DDR2, 16MX16, 333MHZ @ CL5, 84 BALL BGA (8MMX12.
IC DDR2 256M 333MHZ 84BGA
IC DRAM 256MBIT PARALLEL 84TWBGA
IC DDR2 256M 333MHZ 84BGA
IC DRAM 256MBIT PARALLEL 84TWBGA
The three parts on the right have similar specifications to IS43DR16160A-3DBL-TR.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthLengthHeight Seated (Max)RoHS StatusFactory Lead TimeECCN CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeMemory DensityWidthView Compare
-
IS43DR16160A-3DBL-TRSurface Mount84-TFBGAYES840°C~70°C TATape & Reel (TR)Obsolete3 (168 Hours)84AUTO/SELF REFRESHSDRAM - DDR21.7V~1.9VBOTTOM11.8V0.8mmNot Qualified1.9V1.8V1.7V256Mb 16M x 161VolatileSYNCHRONOUS333MHz0.33mA450psDRAMParallel16b16MX163-STATE1615ns0.005ACOMMON8192484812.5mm1.2mmRoHS Compliant--------
-
Surface Mount60-TFBGA---40°C~85°C TATape & Reel (TR)Active3 (168 Hours)--SDRAM - DDR21.7V~1.9V--------2Gb 256M x 8-Volatile-400MHz-400psDRAMParallel----15ns-------ROHS3 Compliant8 Weeks------
-
Surface Mount60-TFBGA---40°C~85°C TATape & Reel (TR)Active3 (168 Hours)--SDRAM - DDR21.7V~1.9V--------2Gb 256M x 8-Volatile-333MHz-450psDRAMParallel----15ns-------ROHS3 Compliant8 Weeks------
-
Surface Mount60-TFBGAYES--40°C~85°C TATrayActive3 (168 Hours)60PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM - DDR2.3V~2.7VBOTTOM12.5V1mm-2.7V-2.3V512Mb 32M x 161VolatileSYNCHRONOUS166MHz-700psDRAMParallel-32MX16-1615ns-----13mm1.2mmROHS3 Compliant8 WeeksEAR99NOT SPECIFIEDNOT SPECIFIEDR-PBGA-B60536870912 bit8mm
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