ISSI, Integrated Silicon Solution Inc IS43DR82560C-3DBLI-TR
- Part Number:
- IS43DR82560C-3DBLI-TR
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 7373069-IS43DR82560C-3DBLI-TR
- Description:
- Memory IC
- Datasheet:
- IS43DR82560C-3DBLI-TR
ISSI, Integrated Silicon Solution Inc IS43DR82560C-3DBLI-TR technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS43DR82560C-3DBLI-TR.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case60-TFBGA
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySDRAM - DDR2
- Voltage - Supply1.7V~1.9V
- Memory Size2Gb 256M x 8
- Memory TypeVolatile
- Clock Frequency333MHz
- Access Time450ps
- Memory FormatDRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page15ns
- RoHS StatusROHS3 Compliant
IS43DR82560C-3DBLI-TR Overview
There is a memory type Volatile for this type of device. The case comes in the Tape & Reel (TR) style. The file is embedded in a 60-TFBGA case. This chip has an 2Gb 256M x 8 size of memory on it, so a lot of data can be stored on it. Memory data is stored in DRAM-format, which is common in mainstream devices. -40°C~85°C TA is an extended operating temperature range, making this device ideal for demanding applications. A supply voltage of 1.7V~1.9V can be applied to it. There is a recommended mounting type of Surface Mount for it. During the rotation of the clock, the ic memory chip is set as 333MHz.
IS43DR82560C-3DBLI-TR Features
Package / Case: 60-TFBGA
IS43DR82560C-3DBLI-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43DR82560C-3DBLI-TR Memory applications.
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
There is a memory type Volatile for this type of device. The case comes in the Tape & Reel (TR) style. The file is embedded in a 60-TFBGA case. This chip has an 2Gb 256M x 8 size of memory on it, so a lot of data can be stored on it. Memory data is stored in DRAM-format, which is common in mainstream devices. -40°C~85°C TA is an extended operating temperature range, making this device ideal for demanding applications. A supply voltage of 1.7V~1.9V can be applied to it. There is a recommended mounting type of Surface Mount for it. During the rotation of the clock, the ic memory chip is set as 333MHz.
IS43DR82560C-3DBLI-TR Features
Package / Case: 60-TFBGA
IS43DR82560C-3DBLI-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43DR82560C-3DBLI-TR Memory applications.
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
IS43DR82560C-3DBLI-TR More Descriptions
DRAM Chip DDR2 SDRAM 2G-Bit 256Mx8 1.8V 60-Pin TWBGA T/R
DDR2 DRAM, 64MX16, 0.4ns, CMOS, PBGA84
IC DRAM 2GBIT PARALLEL 60TWBGA
DRAM 2G 256Mx8 333MHz DDR2 1.8V
2G, 1.8V, Ddr2, 256Mx8, 333Mhz @ Cl5, 60 Ball Bga (8Mm X 10.5Mm) Rohs, It, T&r |Integrated Silicon Solution (Issi) IS43DR82560C-3DBLI-TR
DDR2 DRAM, 64MX16, 0.4ns, CMOS, PBGA84
IC DRAM 2GBIT PARALLEL 60TWBGA
DRAM 2G 256Mx8 333MHz DDR2 1.8V
2G, 1.8V, Ddr2, 256Mx8, 333Mhz @ Cl5, 60 Ball Bga (8Mm X 10.5Mm) Rohs, It, T&r |Integrated Silicon Solution (Issi) IS43DR82560C-3DBLI-TR
The three parts on the right have similar specifications to IS43DR82560C-3DBLI-TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusMountNumber of PinsNumber of TerminationsECCN CodeAdditional FeatureHTS CodeTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchPin CountOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Number of PortsNominal Supply CurrentData Bus WidthOrganizationOutput CharacteristicsMemory WidthAddress Bus WidthDensityStandby Current-MaxI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthLengthHeight Seated (Max)Radiation HardeningLead FreeSurface MountPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeOperating ModeMemory DensityWidthView Compare
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IS43DR82560C-3DBLI-TR8 WeeksSurface Mount60-TFBGA-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)SDRAM - DDR21.7V~1.9V2Gb 256M x 8Volatile333MHz450psDRAMParallel15nsROHS3 Compliant---------------------------------------
-
8 WeeksSurface Mount66-TSSOP (0.400, 10.16mm Width)-40°C~85°C TATrayActive3 (168 Hours)SDRAM - DDR2.3V~2.7V256Mb 16M x 16Volatile200MHz700psDRAMParallel15nsROHS3 CompliantSurface Mount6666EAR99AUTO/SELF REFRESH8542.32.00.24DUAL12.5V0.65mm662.5V2.7V2.3V1330mA16b16MX163-STATE1615b256 Mb0.004ACOMMON819224824822.22mm1.2mmNoLead Free-------
-
8 WeeksSurface Mount84-TFBGA-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)SDRAM - DDR21.7V~1.9V2Gb 128M x 16Volatile400MHz400nsDRAMParallel15nsROHS3 Compliant--------------------------------------
-
8 WeeksSurface Mount60-TFBGA-40°C~85°C TATrayActive3 (168 Hours)SDRAM - DDR2.3V~2.7V512Mb 32M x 16Volatile200MHz700psDRAMParallel15nsROHS3 Compliant--60EAR99PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH-BOTTOM12.5V1mm--2.7V2.3V1--32MX16-16-------13mm1.2mm--YESNOT SPECIFIEDNOT SPECIFIEDR-PBGA-B60SYNCHRONOUS536870912 bit8mm
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