Micron Technology Inc. EDB4432BBBJ-1DAAT-F-D

Name: EDB4432BBBJ-1DAAT-F-D
Brand: Micron Technology Inc.
SKU: 7372986-EDB4432BBBJ-1DAAT-F-D
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: EDB4432BBBJ-1DAAT-F-D

Manufacturer:: Micron Technology Inc.

Ventron No:: 7372986-EDB4432BBBJ-1DAAT-F-D

Description:: Memory IC 11.5mm mm

ECAD Model:

Datasheet:: EDB4432BBBJ-1DAAT-F-D

Specifications

Micron Technology Inc. EDB4432BBBJ-1DAAT-F-D technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. EDB4432BBBJ-1DAAT-F-D.

Factory Lead Time
8 Weeks
Mounting Type
Surface Mount
Package / Case
134-WFBGA
Surface Mount
YES
Operating Temperature
-40°C~105°C TC
Packaging
Tray
JESD-609 Code
e1
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
134
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature
AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
Technology
SDRAM - Mobile LPDDR2
Voltage - Supply
1.14V~1.95V
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Number of Functions
1
Supply Voltage
1.2V
Terminal Pitch
0.65mm
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PBGA-B134
Supply Voltage-Max (Vsup)
1.95V
Supply Voltage-Min (Vsup)
1.14V
Memory Size
4Gb 128M x 32
Number of Ports
1
Memory Type
Volatile
Operating Mode
SYNCHRONOUS
Clock Frequency
533MHz
Memory Format
DRAM
Memory Interface
Parallel
Organization
128MX32
Memory Width
32
Memory Density
4294967296 bit
Access Mode
SINGLE BANK PAGE BURST
Length
11.5mm
Height Seated (Max)
0.75mm
Width
10mm
RoHS Status
ROHS3 Compliant

Description

EDB4432BBBJ-1DAAT-F-D Overview
Its memory type can be classified as Volatile. It comes in a Tray. It is available in 134-WFBGA case. The memory size of the chip is 4Gb 128M x 32 Mb. This device utilizes a DRAM format memory which is of mainstream design. With an extended designed operating temperature of -40°C~105°C TC, this device is capable of lots of demanding applications. It is supplied votage within 1.14V~1.95V. Its recommended mounting type is Surface Mount. 134 terminations are planted on the chip. This part supports as many as 1 functions for the comprehensive working procedure. This ic memory chip is designed to be supplied with 1.2V. The memory has a clock frequency rotation within 533MHz. In spite of all the merits this chip has, it also features AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM to level up system performance. There are 1 ports used in this chip to give read and/or write access to one memory address.

EDB4432BBBJ-1DAAT-F-D Features
Package / Case: 134-WFBGA
Additional Feature:AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

EDB4432BBBJ-1DAAT-F-D Applications
There are a lot of Micron Technology Inc.
EDB4432BBBJ-1DAAT-F-D Memory applications.

Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications

EDB4432BBBJ-1DAAT-F-D More Descriptions

Active BOTTOM Volatile SYNCHRONOUS ic memory -40C~105C TC 1.14V 4294967296bit 10mm
DRAM Chip Mobile LPDDR2 SDRAM 4Gbit 128Mx32 1.2V/1.8V Automotive WFBGA Dry
Dram, 128M X 32Bit, -40 To 105Deg C; Dram Type:Lpddr2; Memory Configuration:128M X 32Bit; Clock Frequency Max:533Mhz; Ic Case/Package:Wfbga; No. Of Pins:134Pins; Supply Voltage Nom:1.2V; Ic Mounting:Surface Mount; Product Range:- Rohs Compliant: Yes |Micron EDB4432BBBJ-1DAAT-F-D

Product Comparison

The three parts on the right have similar specifications to EDB4432BBBJ-1DAAT-F-D.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Operating Temperature

Packaging

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Technology

Voltage - Supply

Terminal Position

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Terminal Pitch

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Memory Size

Number of Ports

Memory Type

Operating Mode

Clock Frequency

Memory Format

Memory Interface

Organization

Memory Width

Memory Density

Access Mode

Length

Height Seated (Max)

Width

RoHS Status

View Compare
EDB4432BBBJ-1DAAT-F-D

Micron Technology Inc.

8 Weeks

Surface Mount

134-WFBGA

YES

-40°C~105°C TC

Tray

e1

Active

3 (168 Hours)

134

EAR99

Tin/Silver/Copper (Sn/Ag/Cu)

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

SDRAM - Mobile LPDDR2

1.14V~1.95V

BOTTOM

260

1

1.2V

0.65mm

30

R-PBGA-B134

1.95V

1.14V

4Gb 128M x 32

1

Volatile

SYNCHRONOUS

533MHz

DRAM

Parallel

128MX32

32

4294967296 bit

SINGLE BANK PAGE BURST

11.5mm

0.75mm

10mm

ROHS3 Compliant

-
EDB4432BBBJ-1DAUT-F-D

Micron Technology Inc.

8 Weeks

Surface Mount

134-WFBGA

YES

-40°C~125°C TC

Tray

e1

Active

3 (168 Hours)

134

EAR99

Tin/Silver/Copper (Sn/Ag/Cu)

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

SDRAM - Mobile LPDDR2

1.14V~1.95V

BOTTOM

260

1

1.2V

0.65mm

30

R-PBGA-B134

1.95V

1.14V

4Gb 128M x 32

1

Volatile

SYNCHRONOUS

533MHz

DRAM

Parallel

128MX32

32

4294967296 bit

SINGLE BANK PAGE BURST

11.5mm

0.75mm

10mm

ROHS3 Compliant

EDB4432BBBJ-1DAAT-F-D vs EDB4432BBBJ-1DAUT-F-D
EDB4416BBBH-1DIT-F-R

Micron Technology Inc.

-

Surface Mount

134-WFBGA

YES

-40°C~85°C TC

Tape & Reel (TR)

-

Obsolete

3 (168 Hours)

134

EAR99

-

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

SDRAM - Mobile LPDDR2

1.14V~1.95V

BOTTOM

-

1

1.2V

0.65mm

-

R-PBGA-B134

1.3V

1.14V

4Gb 256M x 16

1

Volatile

SYNCHRONOUS

533MHz

DRAM

Parallel

256MX16

16

4294967296 bit

SINGLE BANK PAGE BURST

11.5mm

0.75mm

10mm

ROHS3 Compliant

EDB4432BBBJ-1DAAT-F-D vs EDB4416BBBH-1DIT-F-R
EDB4432BBPE-1D-F-D

Micron Technology Inc.

8 Weeks

Surface Mount

FBGA

-

-30°C~85°C TC

Tray

-

Active

3 (168 Hours)

-

-

-

-

SDRAM - Mobile LPDDR2

1.14V~1.95V

-

-

-

-

-

-

-

-

-

4Gb 128M x 32

-

Volatile

-

533MHz

DRAM

Parallel

-

-

-

-

-

-

-

ROHS3 Compliant

EDB4432BBBJ-1DAAT-F-D vs EDB4432BBPE-1D-F-D