Micron Technology Inc. EDB4432BBBJ-1DAUT-F-R TR

Name: EDB4432BBBJ-1DAUT-F-R TR
Brand: Micron Technology Inc.
SKU: 7096222-EDB4432BBBJ-1DAUT-F-R TR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: EDB4432BBBJ-1DAUT-F-R TR

Manufacturer:: Micron Technology Inc.

Ventron No:: 7096222-EDB4432BBBJ-1DAUT-F-R TR

Description:: Memory IC

ECAD Model:

Datasheet:: EDB4432BBBJ-1DAUT-F-R TR

Specifications

Micron Technology Inc. EDB4432BBBJ-1DAUT-F-R TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. EDB4432BBBJ-1DAUT-F-R TR.

Mounting Type
Surface Mount
Package / Case
134-WFBGA
Operating Temperature
-40°C~125°C TC
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Technology
SDRAM - Mobile LPDDR2
Voltage - Supply
1.14V~1.95V
Memory Size
4Gb 128M x 32
Memory Type
Volatile
Clock Frequency
533MHz
Memory Format
DRAM
Memory Interface
Parallel
RoHS Status
ROHS3 Compliant

Description

EDB4432BBBJ-1DAUT-F-R TR Overview
The product in question is manufactured by Micron Technology Inc., and it belongs to the category of Memory electronic components. The package or case style for this product is 134-WFBGA. Currently, the part status is active. The moisture sensitivity level (MSL) stands at 3 (168 hours). The technology used in this product is SDRAM - Mobile LPDDR2. The voltage supply range for this product is between 1.14V~1.95V. The memory size is 4Gb 128M x 32, with a volatile nature. The clock frequency is set at 533MHz, and the memory format is DRAM. The interface type for this product is Parallel.

EDB4432BBBJ-1DAUT-F-R TR Features
Package / Case: 134-WFBGA

EDB4432BBBJ-1DAUT-F-R TR Applications
There are a lot of Micron Technology Inc.
EDB4432BBBJ-1DAUT-F-R TR Memory applications.

mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer

EDB4432BBBJ-1DAUT-F-R TR More Descriptions

IC DRAM 4GBIT PARALLEL 134FBGA
IC SDRAM 8GBIT 400MHZ 220FBGA
IC DRAM 4G PARALLEL 533MHZ

Product Comparison

The three parts on the right have similar specifications to EDB4432BBBJ-1DAUT-F-R TR.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Technology

Voltage - Supply

Memory Size

Memory Type

Clock Frequency

Memory Format

Memory Interface

RoHS Status

Factory Lead Time

Surface Mount

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Terminal Position

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Terminal Pitch

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Number of Ports

Operating Mode

Organization

Memory Width

Memory Density

Access Mode

Length

Height Seated (Max)

Width

View Compare
EDB4432BBBJ-1DAUT-F-R TR

Micron Technology Inc.

Surface Mount

134-WFBGA

-40°C~125°C TC

Tape & Reel (TR)

Active

3 (168 Hours)

SDRAM - Mobile LPDDR2

1.14V~1.95V

4Gb 128M x 32

Volatile

533MHz

DRAM

Parallel

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
EDB4064B4PB-1DIT-F-D

Micron Technology Inc.

Surface Mount

216-WFBGA

-40°C~85°C TC

Tray

Last Time Buy

3 (168 Hours)

SDRAM - Mobile LPDDR2

1.14V~1.95V

4Gb 64M x 64

Volatile

533MHz

DRAM

Parallel

ROHS3 Compliant

9 Weeks

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

EDB4432BBBJ-1DAUT-F-R TR vs EDB4064B4PB-1DIT-F-D
EDB4064B4PB-1DIT-F-R TR

Micron Technology Inc.

Surface Mount

216-WFBGA

-40°C~85°C TC

Tape & Reel (TR)

Last Time Buy

3 (168 Hours)

SDRAM - Mobile LPDDR2

1.14V~1.95V

4Gb 64M x 64

Volatile

533MHz

DRAM

Parallel

ROHS3 Compliant

9 Weeks

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

EDB4432BBBJ-1DAUT-F-R TR vs EDB4064B4PB-1DIT-F-R TR
EDB4432BBBJ-1DAAT-F-D

Micron Technology Inc.

Surface Mount

134-WFBGA

-40°C~105°C TC

Tray

Active

3 (168 Hours)

SDRAM - Mobile LPDDR2

1.14V~1.95V

4Gb 128M x 32

Volatile

533MHz

DRAM

Parallel

ROHS3 Compliant

8 Weeks

YES

e1

134

EAR99

Tin/Silver/Copper (Sn/Ag/Cu)

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

BOTTOM

260

1

1.2V

0.65mm

30

R-PBGA-B134

1.95V

1.14V

1

SYNCHRONOUS

128MX32

32

4294967296 bit

SINGLE BANK PAGE BURST

11.5mm

0.75mm

10mm

EDB4432BBBJ-1DAUT-F-R TR vs EDB4432BBBJ-1DAAT-F-D