Micron Technology Inc. EDB4064B4PB-1DIT-F-R TR
- Part Number:
- EDB4064B4PB-1DIT-F-R TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7374430-EDB4064B4PB-1DIT-F-R TR
- Description:
- Memory IC
- Datasheet:
- EDB4064B4PB-1DIT-F-R TR
Micron Technology Inc. EDB4064B4PB-1DIT-F-R TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. EDB4064B4PB-1DIT-F-R TR.
- Factory Lead Time9 Weeks
- Mounting TypeSurface Mount
- Package / Case216-WFBGA
- Operating Temperature-40°C~85°C TC
- PackagingTape & Reel (TR)
- Part StatusLast Time Buy
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySDRAM - Mobile LPDDR2
- Voltage - Supply1.14V~1.95V
- Memory Size4Gb 64M x 64
- Memory TypeVolatile
- Clock Frequency533MHz
- Memory FormatDRAM
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
EDB4064B4PB-1DIT-F-R TR Overview
There is a Volatile memory type associated with this device. Tape & Reel (TR)-cases are available. There is a 216-WFBGA case embedded in it. 4Gb 64M x 64 is the chip's memory size. DRAM-format memory is used in this device, which is a mainstream design. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. The supply voltage can be up to 1.14V~1.95V. A Surface Mount mounting type is recommended for this product. In this memory, the clock frequency rotation is within an 533MHz range.
EDB4064B4PB-1DIT-F-R TR Features
Package / Case: 216-WFBGA
EDB4064B4PB-1DIT-F-R TR Applications
There are a lot of Micron Technology Inc.
EDB4064B4PB-1DIT-F-R TR Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
There is a Volatile memory type associated with this device. Tape & Reel (TR)-cases are available. There is a 216-WFBGA case embedded in it. 4Gb 64M x 64 is the chip's memory size. DRAM-format memory is used in this device, which is a mainstream design. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. The supply voltage can be up to 1.14V~1.95V. A Surface Mount mounting type is recommended for this product. In this memory, the clock frequency rotation is within an 533MHz range.
EDB4064B4PB-1DIT-F-R TR Features
Package / Case: 216-WFBGA
EDB4064B4PB-1DIT-F-R TR Applications
There are a lot of Micron Technology Inc.
EDB4064B4PB-1DIT-F-R TR Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
EDB4064B4PB-1DIT-F-R TR More Descriptions
IC FLASH 8M PARALLEL 48TSOP
IC DRAM 4G PARALLEL 216WFBGA
IC DRAM 4G PARALLEL 216WFBGA
The three parts on the right have similar specifications to EDB4064B4PB-1DIT-F-R TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatMemory InterfaceRoHS StatusSurface MountJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Number of PortsOperating ModeOrganizationMemory WidthMemory DensityAccess ModeLengthHeight Seated (Max)WidthView Compare
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EDB4064B4PB-1DIT-F-R TR9 WeeksSurface Mount216-WFBGA-40°C~85°C TCTape & Reel (TR)Last Time Buy3 (168 Hours)SDRAM - Mobile LPDDR21.14V~1.95V4Gb 64M x 64Volatile533MHzDRAMParallelROHS3 Compliant-------------------------
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8 WeeksSurface Mount134-WFBGA-40°C~125°C TCTrayActive3 (168 Hours)SDRAM - Mobile LPDDR21.14V~1.95V4Gb 128M x 32Volatile533MHzDRAMParallelROHS3 CompliantYESe1134EAR99Tin/Silver/Copper (Sn/Ag/Cu)AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMBOTTOM26011.2V0.65mm30R-PBGA-B1341.95V1.14V1SYNCHRONOUS128MX32324294967296 bitSINGLE BANK PAGE BURST11.5mm0.75mm10mm
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8 WeeksSurface Mount134-WFBGA-40°C~105°C TCTrayActive3 (168 Hours)SDRAM - Mobile LPDDR21.14V~1.95V4Gb 128M x 32Volatile533MHzDRAMParallelROHS3 CompliantYESe1134EAR99Tin/Silver/Copper (Sn/Ag/Cu)AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMBOTTOM26011.2V0.65mm30R-PBGA-B1341.95V1.14V1SYNCHRONOUS128MX32324294967296 bitSINGLE BANK PAGE BURST11.5mm0.75mm10mm
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8 WeeksSurface MountFBGA-30°C~85°C TCTrayActive3 (168 Hours)SDRAM - Mobile LPDDR21.14V~1.95V4Gb 128M x 32Volatile533MHzDRAMParallelROHS3 Compliant------------------------
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