Micron Technology Inc. EDB4432BBBJ-1DAUT-F-D
- Part Number:
- EDB4432BBBJ-1DAUT-F-D
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7373099-EDB4432BBBJ-1DAUT-F-D
- Description:
- Memory IC 11.5mm mm
- Datasheet:
- EDB4432BBBJ-1DAUT-F-D
Micron Technology Inc. EDB4432BBBJ-1DAUT-F-D technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. EDB4432BBBJ-1DAUT-F-D.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case134-WFBGA
- Surface MountYES
- Operating Temperature-40°C~125°C TC
- PackagingTray
- JESD-609 Codee1
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations134
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
- TechnologySDRAM - Mobile LPDDR2
- Voltage - Supply1.14V~1.95V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage1.2V
- Terminal Pitch0.65mm
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PBGA-B134
- Supply Voltage-Max (Vsup)1.95V
- Supply Voltage-Min (Vsup)1.14V
- Memory Size4Gb 128M x 32
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency533MHz
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization128MX32
- Memory Width32
- Memory Density4294967296 bit
- Access ModeSINGLE BANK PAGE BURST
- Length11.5mm
- Height Seated (Max)0.75mm
- Width10mm
- RoHS StatusROHS3 Compliant
EDB4432BBBJ-1DAUT-F-D Overview
Its memory type can be classified as Volatile. It comes in a Tray. It is available in 134-WFBGA case. The memory size of the chip is 4Gb 128M x 32 Mb. This device utilizes a DRAM format memory which is of mainstream design. With an extended designed operating temperature of -40°C~125°C TC, this device is capable of lots of demanding applications. It is supplied votage within 1.14V~1.95V. Its recommended mounting type is Surface Mount. 134 terminations are planted on the chip. This part supports as many as 1 functions for the comprehensive working procedure. This ic memory chip is designed to be supplied with 1.2V. The memory has a clock frequency rotation within 533MHz. In spite of all the merits this chip has, it also features AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM to level up system performance. There are 1 ports used in this chip to give read and/or write access to one memory address.
EDB4432BBBJ-1DAUT-F-D Features
Package / Case: 134-WFBGA
Additional Feature:AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
EDB4432BBBJ-1DAUT-F-D Applications
There are a lot of Micron Technology Inc.
EDB4432BBBJ-1DAUT-F-D Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
Its memory type can be classified as Volatile. It comes in a Tray. It is available in 134-WFBGA case. The memory size of the chip is 4Gb 128M x 32 Mb. This device utilizes a DRAM format memory which is of mainstream design. With an extended designed operating temperature of -40°C~125°C TC, this device is capable of lots of demanding applications. It is supplied votage within 1.14V~1.95V. Its recommended mounting type is Surface Mount. 134 terminations are planted on the chip. This part supports as many as 1 functions for the comprehensive working procedure. This ic memory chip is designed to be supplied with 1.2V. The memory has a clock frequency rotation within 533MHz. In spite of all the merits this chip has, it also features AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM to level up system performance. There are 1 ports used in this chip to give read and/or write access to one memory address.
EDB4432BBBJ-1DAUT-F-D Features
Package / Case: 134-WFBGA
Additional Feature:AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
EDB4432BBBJ-1DAUT-F-D Applications
There are a lot of Micron Technology Inc.
EDB4432BBBJ-1DAUT-F-D Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
EDB4432BBBJ-1DAUT-F-D More Descriptions
DRAM Chip Mobile LPDDR2 SDRAM 4G-Bit 128Mx32 1.2V 134-Pin WFBGA Tray
IC DRAM 4GBIT PARALLEL 134FBGA
Dram, 128M X 32Bit, -40 To 125Deg C; Dram Type:Lpddr2; Dram Density:4Gbit; Dram Memory Configuration:128M X 32Bit; Clock Frequency:533Mhz; Memory Case Style:Wfbga; No. Of Pins:134Pins; Supply Voltage Nom:1.2V; Access Time:1.875Ns Rohs Compliant: Yes |Micron EDB4432BBBJ-1DAUT-F-D
IC DRAM 4GBIT PARALLEL 134FBGA
Dram, 128M X 32Bit, -40 To 125Deg C; Dram Type:Lpddr2; Dram Density:4Gbit; Dram Memory Configuration:128M X 32Bit; Clock Frequency:533Mhz; Memory Case Style:Wfbga; No. Of Pins:134Pins; Supply Voltage Nom:1.2V; Access Time:1.875Ns Rohs Compliant: Yes |Micron EDB4432BBBJ-1DAUT-F-D
The three parts on the right have similar specifications to EDB4432BBBJ-1DAUT-F-D.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencyMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityAccess ModeLengthHeight Seated (Max)WidthRoHS StatusView Compare
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EDB4432BBBJ-1DAUT-F-D8 WeeksSurface Mount134-WFBGAYES-40°C~125°C TCTraye1Active3 (168 Hours)134EAR99Tin/Silver/Copper (Sn/Ag/Cu)AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMSDRAM - Mobile LPDDR21.14V~1.95VBOTTOM26011.2V0.65mm30R-PBGA-B1341.95V1.14V4Gb 128M x 321VolatileSYNCHRONOUS533MHzDRAMParallel128MX32324294967296 bitSINGLE BANK PAGE BURST11.5mm0.75mm10mmROHS3 Compliant-
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9 WeeksSurface Mount216-WFBGA--40°C~85°C TCTray-Last Time Buy3 (168 Hours)----SDRAM - Mobile LPDDR21.14V~1.95V---------4Gb 64M x 64-Volatile-533MHzDRAMParallel-------ROHS3 Compliant
-
8 WeeksSurface Mount134-WFBGAYES-40°C~105°C TCTraye1Active3 (168 Hours)134EAR99Tin/Silver/Copper (Sn/Ag/Cu)AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMSDRAM - Mobile LPDDR21.14V~1.95VBOTTOM26011.2V0.65mm30R-PBGA-B1341.95V1.14V4Gb 128M x 321VolatileSYNCHRONOUS533MHzDRAMParallel128MX32324294967296 bitSINGLE BANK PAGE BURST11.5mm0.75mm10mmROHS3 Compliant
-
-Surface Mount134-WFBGA--40°C~125°C TCTape & Reel (TR)-Active3 (168 Hours)----SDRAM - Mobile LPDDR21.14V~1.95V---------4Gb 128M x 32-Volatile-533MHzDRAMParallel-------ROHS3 Compliant
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