EDB4432BBBJ-1D-F-R

Micron Technology Inc. EDB4432BBBJ-1D-F-R

Part Number:
EDB4432BBBJ-1D-F-R
Manufacturer:
Micron Technology Inc.
Ventron No:
7374617-EDB4432BBBJ-1D-F-R
Description:
Memory IC 11.5mm mm
ECAD Model:
Datasheet:
EDB4432BBBJ-1D-F-R

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Specifications
Micron Technology Inc. EDB4432BBBJ-1D-F-R technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. EDB4432BBBJ-1D-F-R.
  • Factory Lead Time
    8 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    134-WFBGA
  • Surface Mount
    YES
  • Operating Temperature
    -30°C~85°C TC
  • Packaging
    Tape & Reel (TR)
  • JESD-609 Code
    e1
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    134
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Additional Feature
    AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
  • HTS Code
    8542.32.00.36
  • Technology
    SDRAM - Mobile LPDDR2
  • Voltage - Supply
    1.14V~1.95V
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    260
  • Number of Functions
    1
  • Supply Voltage
    1.2V
  • Terminal Pitch
    0.65mm
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PBGA-B134
  • Supply Voltage-Max (Vsup)
    1.3V
  • Supply Voltage-Min (Vsup)
    1.14V
  • Memory Size
    4Gb 128M x 32
  • Number of Ports
    1
  • Memory Type
    Volatile
  • Operating Mode
    SYNCHRONOUS
  • Clock Frequency
    533MHz
  • Memory Format
    DRAM
  • Memory Interface
    Parallel
  • Organization
    128MX32
  • Memory Width
    32
  • Memory Density
    4294967296 bit
  • Access Mode
    MULTI BANK PAGE BURST
  • Length
    11.5mm
  • Height Seated (Max)
    0.75mm
  • Width
    10mm
  • RoHS Status
    ROHS3 Compliant
Description
EDB4432BBBJ-1D-F-R Overview
In this case, the memory type of the device can be classified as Volatile. Case Tape & Reel (TR) is available. An embedded 134-WFBGA case surrounds memory ics. It is estimated that the memory size on the chip is 4Gb 128M x 32. As with most mainstream devices, this one uses DRAM-format memory. Due to its wide temperature range of -30°C~85°C TC, this device is well suited to a wide range of applications that require high performance. With 1.14V~1.95V as the supply voltage, it is capable of handling memory ics. It is recommended to mount it in the Surface Mount mounting type. It is planted on the chip with 134 terminations. It supports up to 1 functions for comprehensive operation. There is a requirement for 1.2V to be supplied to this ic memory chip in order to operate. In order to operate effectively, the memory rotates at a clock frequency within a range of 533MHz. This chip is not only loaded with advantages, but it also comes with AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM, which boosts the performance of your system. Several ports on this chip are used to access one memory address for reading and writing.

EDB4432BBBJ-1D-F-R Features
Package / Case: 134-WFBGA
Additional Feature:AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM


EDB4432BBBJ-1D-F-R Applications
There are a lot of Micron Technology Inc.
EDB4432BBBJ-1D-F-R Memory applications.


networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
EDB4432BBBJ-1D-F-R More Descriptions
DRAM Chip Mobile LPDDR2 SDRAM 4Gbit 128Mx32 1.2V/1.8V 134-Pin FBGA T/R
IC DRAM 4GBIT PARALLEL 134FBGA
Dram, 128M X 32Bit, -30 To 85Deg C; Dram Type:Lpddr2; Memory Configuration:128M X 32Bit; Clock Frequency Max:533Mhz; Ic Case/Package:Wfbga; No. Of Pins:134Pins; Supply Voltage Nom:1.2V; Ic Mounting:Surface Mount; Product Range:- Rohs Compliant: Yes |Micron EDB4432BBBJ-1D-F-R
Product Comparison
The three parts on the right have similar specifications to EDB4432BBBJ-1D-F-R.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Operating Temperature
    Packaging
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    HTS Code
    Technology
    Voltage - Supply
    Terminal Position
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Memory Size
    Number of Ports
    Memory Type
    Operating Mode
    Clock Frequency
    Memory Format
    Memory Interface
    Organization
    Memory Width
    Memory Density
    Access Mode
    Length
    Height Seated (Max)
    Width
    RoHS Status
    View Compare
  • EDB4432BBBJ-1D-F-R
    EDB4432BBBJ-1D-F-R
    8 Weeks
    Surface Mount
    134-WFBGA
    YES
    -30°C~85°C TC
    Tape & Reel (TR)
    e1
    Active
    3 (168 Hours)
    134
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
    8542.32.00.36
    SDRAM - Mobile LPDDR2
    1.14V~1.95V
    BOTTOM
    260
    1
    1.2V
    0.65mm
    30
    R-PBGA-B134
    1.3V
    1.14V
    4Gb 128M x 32
    1
    Volatile
    SYNCHRONOUS
    533MHz
    DRAM
    Parallel
    128MX32
    32
    4294967296 bit
    MULTI BANK PAGE BURST
    11.5mm
    0.75mm
    10mm
    ROHS3 Compliant
    -
  • EDB4432BBBJ-1DAUT-F-D
    8 Weeks
    Surface Mount
    134-WFBGA
    YES
    -40°C~125°C TC
    Tray
    e1
    Active
    3 (168 Hours)
    134
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
    -
    SDRAM - Mobile LPDDR2
    1.14V~1.95V
    BOTTOM
    260
    1
    1.2V
    0.65mm
    30
    R-PBGA-B134
    1.95V
    1.14V
    4Gb 128M x 32
    1
    Volatile
    SYNCHRONOUS
    533MHz
    DRAM
    Parallel
    128MX32
    32
    4294967296 bit
    SINGLE BANK PAGE BURST
    11.5mm
    0.75mm
    10mm
    ROHS3 Compliant
  • EDB4432BBBJ-1DAAT-F-D
    8 Weeks
    Surface Mount
    134-WFBGA
    YES
    -40°C~105°C TC
    Tray
    e1
    Active
    3 (168 Hours)
    134
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
    -
    SDRAM - Mobile LPDDR2
    1.14V~1.95V
    BOTTOM
    260
    1
    1.2V
    0.65mm
    30
    R-PBGA-B134
    1.95V
    1.14V
    4Gb 128M x 32
    1
    Volatile
    SYNCHRONOUS
    533MHz
    DRAM
    Parallel
    128MX32
    32
    4294967296 bit
    SINGLE BANK PAGE BURST
    11.5mm
    0.75mm
    10mm
    ROHS3 Compliant
  • EDB4064B4PB-1DIT-F-D TR
    -
    Surface Mount
    216-WFBGA
    -
    -40°C~85°C TC
    Tape & Reel (TR)
    -
    Last Time Buy
    3 (168 Hours)
    -
    -
    -
    -
    -
    SDRAM - Mobile LPDDR2
    1.14V~1.95V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    4Gb 64M x 64
    -
    Volatile
    -
    533MHz
    DRAM
    Parallel
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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