ZXTP2009ZTA

Diodes Incorporated ZXTP2009ZTA

Part Number:
ZXTP2009ZTA
Manufacturer:
Diodes Incorporated
Ventron No:
3585184-ZXTP2009ZTA
Description:
TRANS PNP 40V 5.5A SOT89
ECAD Model:
Datasheet:
ZXTP2009ZTA

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Comments
Specifications
Diodes Incorporated ZXTP2009ZTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXTP2009ZTA.
  • Factory Lead Time
    15 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-243AA
  • Number of Pins
    4
  • Weight
    51.993025mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Voltage - Rated DC
    -40V
  • Max Power Dissipation
    3W
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -5.5A
  • Frequency
    152MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    ZXTP2009
  • Pin Count
    4
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    3W
  • Case Connection
    COLLECTOR
  • Power - Max
    2.1W
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    152MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    40V
  • Max Collector Current
    5.5A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 500mA 2V
  • Current - Collector Cutoff (Max)
    20nA
  • Vce Saturation (Max) @ Ib, Ic
    185mV @ 550mA, 5.5A
  • Collector Emitter Breakdown Voltage
    40V
  • Transition Frequency
    152MHz
  • Collector Emitter Saturation Voltage
    -185mV
  • Max Breakdown Voltage
    40V
  • Collector Base Voltage (VCBO)
    50V
  • Emitter Base Voltage (VEBO)
    7.5V
  • hFE Min
    100
  • Continuous Collector Current
    -5.5A
  • Height
    1.6mm
  • Length
    4.6mm
  • Width
    2.6mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZXTP2009ZTA Overview
This device has a DC current gain of 200 @ 500mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -185mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -5.5A is necessary for high efficiency.The base voltage of the emitter can be kept at 7.5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -5.5A.In this part, there is a transition frequency of 152MHz.As a result, it can handle voltages as low as 40V volts.The maximum collector current is 5.5A volts.

ZXTP2009ZTA Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -185mV
the vce saturation(Max) is 185mV @ 550mA, 5.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is -5.5A
a transition frequency of 152MHz


ZXTP2009ZTA Applications
There are a lot of Diodes Incorporated
ZXTP2009ZTA applications of single BJT transistors.


Inverter
Interface
Driver
Muting
ZXTP2009ZTA More Descriptions
ZXTP2009Z Series PNP 40 V 5.5 A Medium Power Transistor SMT - SOT-89-3
Trans GP BJT PNP 40V 5.5A 3000mW 4-Pin(3 Tab) SOT-89 T/R
Trans, Pnp, 40V, 5.5A, 150Deg C, 2.1W Rohs Compliant: Yes |Diodes Inc. ZXTP2009ZTA
Product Comparison
The three parts on the right have similar specifications to ZXTP2009ZTA.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Power - Max
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Continuous Collector Current
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Subcategory
    REACH SVHC
    View Compare
  • ZXTP2009ZTA
    ZXTP2009ZTA
    15 Weeks
    Surface Mount
    Surface Mount
    TO-243AA
    4
    51.993025mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    no
    Active
    1 (Unlimited)
    4
    EAR99
    Matte Tin (Sn)
    -40V
    3W
    DUAL
    FLAT
    260
    -5.5A
    152MHz
    40
    ZXTP2009
    4
    1
    Single
    3W
    COLLECTOR
    2.1W
    SWITCHING
    152MHz
    PNP
    PNP
    40V
    5.5A
    200 @ 500mA 2V
    20nA
    185mV @ 550mA, 5.5A
    40V
    152MHz
    -185mV
    40V
    50V
    7.5V
    100
    -5.5A
    1.6mm
    4.6mm
    2.6mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
  • ZXTP03200BGTA
    15 Weeks
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    7.994566mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e3
    no
    Active
    1 (Unlimited)
    4
    EAR99
    Matte Tin (Sn)
    -
    1.25W
    DUAL
    GULL WING
    260
    -
    -
    40
    -
    4
    -
    Single
    -
    -
    1.25W
    -
    105MHz
    PNP
    PNP
    275mV
    2A
    100 @ 1A 5V
    50nA ICBO
    275mV @ 400mA, 2A
    200V
    -
    -37mV
    200V
    -220V
    -7V
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    Other Transistors
    No SVHC
  • ZXTP2008GTA
    15 Weeks
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    no
    Active
    1 (Unlimited)
    4
    EAR99
    Matte Tin (Sn)
    -30V
    3W
    DUAL
    GULL WING
    260
    -5.5A
    110MHz
    40
    ZXTP2008
    4
    1
    Single
    3W
    COLLECTOR
    -
    SWITCHING
    110MHz
    PNP
    PNP
    30V
    5.5A
    100 @ 1A 1V
    20nA ICBO
    210mV @ 500mA, 5.5A
    30V
    110MHz
    -210mV
    30V
    50V
    7V
    100
    -5.5A
    1.65mm
    6.7mm
    3.7mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
  • ZXTP5401FLTA
    15 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn) - annealed
    -
    330mW
    DUAL
    GULL WING
    260
    -
    100MHz
    40
    ZXTP5401
    3
    1
    Single
    330mW
    -
    -
    AMPLIFIER
    100MHz
    PNP
    PNP
    150V
    600mA
    60 @ 10mA 5V
    50nA ICBO
    500mV @ 5mA, 50mA
    150V
    100MHz
    -500mV
    150V
    160V
    5V
    -
    -
    1.02mm
    3.04mm
    1.4mm
    No
    ROHS3 Compliant
    Lead Free
    Other Transistors
    No SVHC
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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