Diodes Incorporated ZXTP2009ZTA
- Part Number:
- ZXTP2009ZTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3585184-ZXTP2009ZTA
- Description:
- TRANS PNP 40V 5.5A SOT89
- Datasheet:
- ZXTP2009ZTA
Diodes Incorporated ZXTP2009ZTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXTP2009ZTA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins4
- Weight51.993025mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Voltage - Rated DC-40V
- Max Power Dissipation3W
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating-5.5A
- Frequency152MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZXTP2009
- Pin Count4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation3W
- Case ConnectionCOLLECTOR
- Power - Max2.1W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product152MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current5.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 500mA 2V
- Current - Collector Cutoff (Max)20nA
- Vce Saturation (Max) @ Ib, Ic185mV @ 550mA, 5.5A
- Collector Emitter Breakdown Voltage40V
- Transition Frequency152MHz
- Collector Emitter Saturation Voltage-185mV
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)7.5V
- hFE Min100
- Continuous Collector Current-5.5A
- Height1.6mm
- Length4.6mm
- Width2.6mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXTP2009ZTA Overview
This device has a DC current gain of 200 @ 500mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -185mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -5.5A is necessary for high efficiency.The base voltage of the emitter can be kept at 7.5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -5.5A.In this part, there is a transition frequency of 152MHz.As a result, it can handle voltages as low as 40V volts.The maximum collector current is 5.5A volts.
ZXTP2009ZTA Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -185mV
the vce saturation(Max) is 185mV @ 550mA, 5.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is -5.5A
a transition frequency of 152MHz
ZXTP2009ZTA Applications
There are a lot of Diodes Incorporated
ZXTP2009ZTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 200 @ 500mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -185mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -5.5A is necessary for high efficiency.The base voltage of the emitter can be kept at 7.5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -5.5A.In this part, there is a transition frequency of 152MHz.As a result, it can handle voltages as low as 40V volts.The maximum collector current is 5.5A volts.
ZXTP2009ZTA Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -185mV
the vce saturation(Max) is 185mV @ 550mA, 5.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is -5.5A
a transition frequency of 152MHz
ZXTP2009ZTA Applications
There are a lot of Diodes Incorporated
ZXTP2009ZTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZXTP2009ZTA More Descriptions
ZXTP2009Z Series PNP 40 V 5.5 A Medium Power Transistor SMT - SOT-89-3
Trans GP BJT PNP 40V 5.5A 3000mW 4-Pin(3 Tab) SOT-89 T/R
Trans, Pnp, 40V, 5.5A, 150Deg C, 2.1W Rohs Compliant: Yes |Diodes Inc. ZXTP2009ZTA
Trans GP BJT PNP 40V 5.5A 3000mW 4-Pin(3 Tab) SOT-89 T/R
Trans, Pnp, 40V, 5.5A, 150Deg C, 2.1W Rohs Compliant: Yes |Diodes Inc. ZXTP2009ZTA
The three parts on the right have similar specifications to ZXTP2009ZTA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSubcategoryREACH SVHCView Compare
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ZXTP2009ZTA15 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)-40V3WDUALFLAT260-5.5A152MHz40ZXTP200941Single3WCOLLECTOR2.1WSWITCHING152MHzPNPPNP40V5.5A200 @ 500mA 2V20nA185mV @ 550mA, 5.5A40V152MHz-185mV40V50V7.5V100-5.5A1.6mm4.6mm2.6mmNoROHS3 CompliantLead Free---
-
15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mg--55°C~150°C TJTape & Reel (TR)2008e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)-1.25WDUALGULL WING260--40-4-Single--1.25W-105MHzPNPPNP275mV2A100 @ 1A 5V50nA ICBO275mV @ 400mA, 2A200V--37mV200V-220V-7V-----NoROHS3 Compliant-Other TransistorsNo SVHC
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15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)-30V3WDUALGULL WING260-5.5A110MHz40ZXTP200841Single3WCOLLECTOR-SWITCHING110MHzPNPPNP30V5.5A100 @ 1A 1V20nA ICBO210mV @ 500mA, 5.5A30V110MHz-210mV30V50V7V100-5.5A1.65mm6.7mm3.7mmNoROHS3 CompliantLead Free--
-
15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed-330mWDUALGULL WING260-100MHz40ZXTP540131Single330mW--AMPLIFIER100MHzPNPPNP150V600mA60 @ 10mA 5V50nA ICBO500mV @ 5mA, 50mA150V100MHz-500mV150V160V5V--1.02mm3.04mm1.4mmNoROHS3 CompliantLead FreeOther TransistorsNo SVHC
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