Diodes Incorporated ZXTP2008GTA
- Part Number:
- ZXTP2008GTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2845234-ZXTP2008GTA
- Description:
- TRANS PNP 30V 5.5A SOT223
- Datasheet:
- ZXTP2008GTA
Diodes Incorporated ZXTP2008GTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXTP2008GTA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Voltage - Rated DC-30V
- Max Power Dissipation3W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-5.5A
- Frequency110MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZXTP2008
- Pin Count4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation3W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product110MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current5.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A 1V
- Current - Collector Cutoff (Max)20nA ICBO
- Vce Saturation (Max) @ Ib, Ic210mV @ 500mA, 5.5A
- Collector Emitter Breakdown Voltage30V
- Transition Frequency110MHz
- Collector Emitter Saturation Voltage-210mV
- Max Breakdown Voltage30V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)7V
- hFE Min100
- Continuous Collector Current-5.5A
- Height1.65mm
- Length6.7mm
- Width3.7mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXTP2008GTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1A 1V.The collector emitter saturation voltage is -210mV, which allows for maximum design flexibility.When VCE saturation is 210mV @ 500mA, 5.5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -5.5A for high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -5.5A.In the part, the transition frequency is 110MHz.This device can take an input voltage of 30V volts before it breaks down.A maximum collector current of 5.5A volts can be achieved.
ZXTP2008GTA Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -210mV
the vce saturation(Max) is 210mV @ 500mA, 5.5A
the emitter base voltage is kept at 7V
the current rating of this device is -5.5A
a transition frequency of 110MHz
ZXTP2008GTA Applications
There are a lot of Diodes Incorporated
ZXTP2008GTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1A 1V.The collector emitter saturation voltage is -210mV, which allows for maximum design flexibility.When VCE saturation is 210mV @ 500mA, 5.5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -5.5A for high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -5.5A.In the part, the transition frequency is 110MHz.This device can take an input voltage of 30V volts before it breaks down.A maximum collector current of 5.5A volts can be achieved.
ZXTP2008GTA Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -210mV
the vce saturation(Max) is 210mV @ 500mA, 5.5A
the emitter base voltage is kept at 7V
the current rating of this device is -5.5A
a transition frequency of 110MHz
ZXTP2008GTA Applications
There are a lot of Diodes Incorporated
ZXTP2008GTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZXTP2008GTA More Descriptions
Trans GP BJT PNP 30V 5.5A 4-Pin(3 Tab) SOT-223 T/R
ZXTP2008G Series 30 V 5.5 A PNP SMT Silicon Low Saturation Transistor - SOT-223
PNP TRANSISTOR 30V 5,5A SOT223 RoHSconf
Power Bipolar Transistor, 5.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin
Trans, Pnp, 30V, 5.5A, 150Deg C, 3W Rohs Compliant: Yes |Diodes Inc. ZXTP2008GTA
ZXTP2008G Series 30 V 5.5 A PNP SMT Silicon Low Saturation Transistor - SOT-223
PNP TRANSISTOR 30V 5,5A SOT223 RoHSconf
Power Bipolar Transistor, 5.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin
Trans, Pnp, 30V, 5.5A, 150Deg C, 3W Rohs Compliant: Yes |Diodes Inc. ZXTP2008GTA
The three parts on the right have similar specifications to ZXTP2008GTA.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSubcategoryPower - MaxMax FrequencyREACH SVHCView Compare
-
ZXTP2008GTA15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)-30V3WDUALGULL WING260-5.5A110MHz40ZXTP200841Single3WCOLLECTORSWITCHING110MHzPNPPNP30V5.5A100 @ 1A 1V20nA ICBO210mV @ 500mA, 5.5A30V110MHz-210mV30V50V7V100-5.5A1.65mm6.7mm3.7mmNoROHS3 CompliantLead Free-----
-
15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)-5.3WDUALGULL WING260--40ZXTP19020D41Single-COLLECTORSWITCHING176MHzPNPPNP20V8A300 @ 100mA 2V50nA ICBO275mV @ 800mA, 8A20V176MHz275mV20V25V7V300-1.65mm6.7mm3.7mmNoROHS3 CompliantLead FreeOther Transistors3W176MHzNo SVHC
-
15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed-330mWDUALGULL WING260-100MHz40ZXTP540131Single330mW-AMPLIFIER100MHzPNPPNP150V600mA60 @ 10mA 5V50nA ICBO500mV @ 5mA, 50mA150V100MHz-500mV150V160V5V--1.02mm3.04mm1.4mmNoROHS3 CompliantLead FreeOther Transistors--No SVHC
-
15 WeeksSurface MountSurface MountSOT-23-3 Flat Leads3-SILICON-55°C~150°C TJTape & Reel (TR)2017e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)-2WDUALGULL WING260-176MHz40ZXTP19020D31Single2W-SWITCHING176MHzPNPPNP20V5.5A300 @ 100mA 2V50nA ICBO175mV @ 550mA, 5.5A20V176MHz-44mV20V25V7V--1mm3mm1.7mmNoROHS3 CompliantLead FreeOther Transistors1.5W-No SVHC
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
10 January 2024
KSZ8999I: The Leader in High Performance Ethernet Switches
Ⅰ. Overview of KSZ8999IⅡ. What are the features of KSZ8999I?Ⅲ. What are the purpose of KSZ8999I?Ⅳ. Specifications of KSZ8999IⅤ. How to use KSZ8999I?Ⅵ. What problems may occur when... -
10 January 2024
What Is the BTS6143D and How Does It Work?
Ⅰ. Introduction to BTS6143DⅡ. How does BTS6143D work?Ⅲ. Technical parameters of BTS6143DⅣ. Package of BTS6143DⅤ. What are the advantages of BTS6143D?Ⅵ. How is the protection function of BTS6143D... -
11 January 2024
MT3608 Converter Manufacturer, Working Principle and Applications
Ⅰ. MT3608 descriptionⅡ. Who is the manufacturer of MT3608?Ⅲ. Specifications of MT3608Ⅳ. MT3608 symbol, footprint and pin configurationⅤ. What are the advantages and disadvantages of MT3608?Ⅵ. Working principle... -
11 January 2024
78L05 Voltage Regulator Characteristics, Applications, 78L05 vs 7805 and More
Ⅰ. Overview of 78L05Ⅱ. What are the characteristics of 78L05?Ⅲ. Technical parameters of 78L05Ⅳ. Working principle of 78L05Ⅴ. Where is 78L05 used?Ⅵ. Application circuit of 78L05 voltage regulatorⅦ....
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.