Diodes Incorporated ZXT790AKTC
- Part Number:
- ZXT790AKTC
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2462797-ZXT790AKTC
- Description:
- TRANS PNP 40V 3A D-PAK
- Datasheet:
- ZXT790AKTC
Diodes Incorporated ZXT790AKTC technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXT790AKTC.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Weight260.39037mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Voltage - Rated DC-40V
- Max Power Dissipation3.9W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-3A
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZXT790A
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation3.9W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 10mA 2V
- Current - Collector Cutoff (Max)20nA
- Vce Saturation (Max) @ Ib, Ic450mV @ 300mA, 3A
- Collector Emitter Breakdown Voltage40V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage-260mV
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)5V
- Height2.39mm
- Length6.73mm
- Width6.22mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXT790AKTC Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 10mA 2V DC current gain.As it features a collector emitter saturation voltage of -260mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 3A volts.
ZXT790AKTC Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 450mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 100MHz
ZXT790AKTC Applications
There are a lot of Diodes Incorporated
ZXT790AKTC applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 10mA 2V DC current gain.As it features a collector emitter saturation voltage of -260mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 3A volts.
ZXT790AKTC Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 450mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 100MHz
ZXT790AKTC Applications
There are a lot of Diodes Incorporated
ZXT790AKTC applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZXT790AKTC More Descriptions
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
Trans GP BJT PNP 40V 3A 3900mW 3-Pin(2 Tab) TO-252 T/R
High Gain, PNP Transistor,3A,40V, DPAK | Diodes Inc ZXT790AKTC
Trans, Pnp, 40V, 3A, 150Deg C, 3.9W Rohs Compliant: Yes |Diodes Inc. ZXT790AKTC
ZXT790AK Series PNP 3 A 40 V SMT Medium Power High Gain Transistor - TO-252
Trans GP BJT PNP 40V 3A 3900mW 3-Pin(2 Tab) TO-252 T/R
High Gain, PNP Transistor,3A,40V, DPAK | Diodes Inc ZXT790AKTC
Trans, Pnp, 40V, 3A, 150Deg C, 3.9W Rohs Compliant: Yes |Diodes Inc. ZXT790AKTC
ZXT790AK Series PNP 3 A 40 V SMT Medium Power High Gain Transistor - TO-252
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