Diodes Incorporated ZX5T955GTA
- Part Number:
- ZX5T955GTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3585267-ZX5T955GTA
- Description:
- TRANS PNP 140V 4A SOT-223
- Datasheet:
- ZX5T955GTA
Diodes Incorporated ZX5T955GTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZX5T955GTA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-140V
- Max Power Dissipation3W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-4A
- Frequency120MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZX5T955
- Pin Count4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation3W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product120MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)140V
- Max Collector Current4A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A 5V
- Current - Collector Cutoff (Max)20nA ICBO
- Vce Saturation (Max) @ Ib, Ic360mV @ 300mA, 3A
- Collector Emitter Breakdown Voltage140V
- Transition Frequency120MHz
- Collector Emitter Saturation Voltage-360mV
- Max Breakdown Voltage140V
- Collector Base Voltage (VCBO)180V
- Emitter Base Voltage (VEBO)-7V
- Continuous Collector Current-4A
- Height1.7mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZX5T955GTA Overview
DC current gain in this device equals 100 @ 1A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -360mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 360mV @ 300mA, 3A.Single BJT transistor is essential to maintain the continuous collector voltage at -4A to achieve high efficiency.An emitter's base voltage can be kept at -7V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -4A current rating.As a result, the part has a transition frequency of 120MHz.Breakdown input voltage is 140V volts.In extreme cases, the collector current can be as low as 4A volts.
ZX5T955GTA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of -360mV
the vce saturation(Max) is 360mV @ 300mA, 3A
the emitter base voltage is kept at -7V
the current rating of this device is -4A
a transition frequency of 120MHz
ZX5T955GTA Applications
There are a lot of Diodes Incorporated
ZX5T955GTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 100 @ 1A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -360mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 360mV @ 300mA, 3A.Single BJT transistor is essential to maintain the continuous collector voltage at -4A to achieve high efficiency.An emitter's base voltage can be kept at -7V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -4A current rating.As a result, the part has a transition frequency of 120MHz.Breakdown input voltage is 140V volts.In extreme cases, the collector current can be as low as 4A volts.
ZX5T955GTA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of -360mV
the vce saturation(Max) is 360mV @ 300mA, 3A
the emitter base voltage is kept at -7V
the current rating of this device is -4A
a transition frequency of 120MHz
ZX5T955GTA Applications
There are a lot of Diodes Incorporated
ZX5T955GTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZX5T955GTA More Descriptions
Trans GP BJT PNP 140V 4A 3000mW 4-Pin(3 Tab) SOT-223 T/R / TRANS PNP 140V 4A SOT-223
140V 3W 100@1A,5V 4A PNP SOT-223 Bipolar Transistors - BJT ROHS
ZX5T955G Series 4 A 140 V SMT PNP Silicon Medium Power Transistor - SOT-223
Trans GP BJT PNP 140V 4A 4Pin SOT223 | Diodes Inc ZX5T955GTA
Power Bipolar Transistor, 4A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin
Bipolar Transistors - BJT PNP 140V
140V 3W 100@1A,5V 4A PNP SOT-223 Bipolar Transistors - BJT ROHS
ZX5T955G Series 4 A 140 V SMT PNP Silicon Medium Power Transistor - SOT-223
Trans GP BJT PNP 140V 4A 4Pin SOT223 | Diodes Inc ZX5T955GTA
Power Bipolar Transistor, 4A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin
Bipolar Transistors - BJT PNP 140V
The three parts on the right have similar specifications to ZX5T955GTA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeReach Compliance CodeJESD-30 CodeQualification StatusConfigurationFrequency - TransitionAdditional FeaturePower - MaxhFE MinView Compare
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ZX5T955GTA15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)Other Transistors-140V3WDUALGULL WING260-4A120MHz40ZX5T95541Single3WCOLLECTORSWITCHING120MHzPNPPNP140V4A100 @ 1A 5V20nA ICBO360mV @ 300mA, 3A140V120MHz-360mV140V180V-7V-4A1.7mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free---------
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-Surface MountSurface MountTO-243AA--SILICON-55°C~150°C TJTape & Reel (TR)2006e3-Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)-100V2.1WDUALFLAT2604.5A-30ZX5T85331--COLLECTORSWITCHING-NPNNPN195mV4.5A100 @ 2A 2V20nA ICBO195mV @ 500mA, 5A100V130MHz-100V--------ROHS3 CompliantLead Freenot_compliantR-PDSO-F3Not QualifiedSINGLE130MHz---
-
15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)-100V3WDUALGULL WING2606A130MHz40ZX5T85341Single3WCOLLECTORSWITCHING130MHzNPNNPN100V6A100 @ 2A 2V20nA ICBO220mV @ 500mA, 5A100V130MHz180mV100V200V7V6A1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free--------
-
15 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJTape & Reel (TR)2004e3-Active1 (Unlimited)3EAR99Matte Tin (Sn)--3W-FLAT260-152MHz30ZX5T3-1Single3WCOLLECTORSWITCHING152MHzPNPPNP40V5.5A200 @ 500mA 2V20nA185mV @ 550mA, 5.5A40V152MHz--50V7.5V-1.6mm4.6mm2.6mm-NoROHS3 Compliant--R-PSSO-F3---HIGH RELIABILITY2.1W200
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