Diodes Incorporated ZX5T949GTA

ZX5T949GTA Overview
This device has a DC current gain of 100 @ 1A 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 210mV.A VCE saturation (Max) of 210mV @ 500mA, 5.5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -5.5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.This device has a current rating of -5.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 110MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 5.5A volts is possible.

ZX5T949GTA Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 210mV @ 500mA, 5.5A
the emitter base voltage is kept at 7V
the current rating of this device is -5.5A
a transition frequency of 110MHz


ZX5T949GTA Applications
There are a lot of Diodes Incorporated
ZX5T949GTA applications of single BJT transistors.


Inverter
Interface
Driver
Muting