ON Semiconductor TIP47G
- Part Number:
- TIP47G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465218-TIP47G
- Description:
- TRANS NPN 250V 1A TO220AB
- Datasheet:
- TIP47G
ON Semiconductor TIP47G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor TIP47G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time2 Weeks
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published1993
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC250V
- Max Power Dissipation40W
- Peak Reflow Temperature (Cel)260
- Current Rating1A
- Frequency10MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberTIP47
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation40W
- Case ConnectionCOLLECTOR
- Power - Max2W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product10MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)250V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 300mA 10V
- Current - Collector Cutoff (Max)1mA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 1A
- Collector Emitter Breakdown Voltage250V
- Transition Frequency10MHz
- Collector Emitter Saturation Voltage1V
- Collector Base Voltage (VCBO)350V
- Emitter Base Voltage (VEBO)5V
- hFE Min30
- Height15.75mm
- Length10.28mm
- Width4.82mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TIP47G Overview
This device has a DC current gain of 30 @ 300mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.In this part, there is a transition frequency of 10MHz.The maximum collector current is 1A volts.
TIP47G Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
TIP47G Applications
There are a lot of ON Semiconductor
TIP47G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 30 @ 300mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.In this part, there is a transition frequency of 10MHz.The maximum collector current is 1A volts.
TIP47G Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
TIP47G Applications
There are a lot of ON Semiconductor
TIP47G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP47G More Descriptions
ON Semi NPN High Voltage Bipolar Transistor 1 A 250 V 4-Pin TO-220AB | ON Semiconductor TIP47G
Trans GP BJT NPN 250V 1A 40000mW Automotive 3-Pin(3 Tab) TO-220AB Tube / TRANS NPN 250V 1A TO220AB
250V 2W 1A NPN TO-220(TO-220-3) Bipolar Transistors - BJT ROHS
1.0 A, 250 V NPN Bipolar Power Transistor
TIP Series 250 V 1 A NPN Through Hole Silicon Power Transistor - TO-220AB
Power Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RF TRANSISTOR, NPN, 250V, 10MHZ, TO-220
TRANSISTOR, NPN, 250V, 1A, TO-220AB; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 250V; Transition Frequency ft: 10MHz; Power Dissipation Pd: 40W; DC Collector Current: 1A; DC Current Gain hFE: 30hFE; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Trans GP BJT NPN 250V 1A 40000mW Automotive 3-Pin(3 Tab) TO-220AB Tube / TRANS NPN 250V 1A TO220AB
250V 2W 1A NPN TO-220(TO-220-3) Bipolar Transistors - BJT ROHS
1.0 A, 250 V NPN Bipolar Power Transistor
TIP Series 250 V 1 A NPN Through Hole Silicon Power Transistor - TO-220AB
Power Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RF TRANSISTOR, NPN, 250V, 10MHZ, TO-220
TRANSISTOR, NPN, 250V, 1A, TO-220AB; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 250V; Transition Frequency ft: 10MHz; Power Dissipation Pd: 40W; DC Collector Current: 1A; DC Current Gain hFE: 30hFE; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
The three parts on the right have similar specifications to TIP47G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionTerminal FinishMax Breakdown VoltageMountConfigurationView Compare
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TIP47GACTIVE (Last Updated: 1 day ago)2 WeeksTinThrough HoleTO-220-3NO34.535924gSILICON-65°C~150°C TJTube1993e3yesActive1 (Unlimited)3EAR99Other Transistors250V40W2601A10MHz40TIP4731Single40WCOLLECTOR2WSWITCHING10MHzNPNNPN250V1A30 @ 300mA 10V1mATO-220AB1V @ 200mA, 1A250V10MHz1V350V5V3015.75mm10.28mm4.82mmNo SVHCNoROHS3 CompliantLead Free---------
-
---Through HoleTO-220-3----150°C TJTube---Obsolete1 (Unlimited)---------TIP49-----2W---NPN--30 @ 300mA 10V1mA-1V @ 200mA, 1A-------------TO-220-3350V1A10MHz----
-
ACTIVE (Last Updated: 1 week ago)2 Weeks-Through HoleTO-220-3NO34.535924gSILICON-65°C~150°C TJTube2005e3yesActive1 (Unlimited)3EAR99Other Transistors60V2W2606A3MHz40TIP4131Single2WCOLLECTOR-SWITCHING3MHzNPNNPN60V6A15 @ 3A 4V700μATO-220AB1.5V @ 600mA, 6A60V3MHz1.5V60V5V306.35mm6.35mm25.4mmNo SVHCNoROHS3 CompliantLead Free----Tin (Sn)60V--
-
---Through HoleTO-220-3-3---65°C~150°C TJTube1993--Obsolete1 (Unlimited)-EAR99Other Transistors-2W----TIP42-----2W--PNPPNP1.5V6A15 @ 3A 4V700μA-1.5V @ 600mA, 6A40V--80V------NoROHS3 Compliant-------Through HoleSingle
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