STMicroelectronics TIP41CN
- Part Number:
- TIP41CN
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2467079-TIP41CN
- Description:
- TRANS NPN 100V 6A TO-220
- Datasheet:
- TIP4(1,2)CN
STMicroelectronics TIP41CN technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics TIP41CN.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN
- SubcategoryOther Transistors
- Voltage - Rated DC100V
- Max Power Dissipation65W
- Current Rating6A
- Base Part NumberTIP41
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current6A
- DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 3A 4V
- Current - Collector Cutoff (Max)700μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1.5V @ 600mA, 6A
- Collector Emitter Breakdown Voltage100V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- hFE Min15
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TIP41CN Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 3A 4V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 600mA, 6A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 6A.Collector current can be as low as 6A volts at its maximum.
TIP41CN Features
the DC current gain for this device is 15 @ 3A 4V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
TIP41CN Applications
There are a lot of STMicroelectronics
TIP41CN applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 3A 4V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 600mA, 6A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 6A.Collector current can be as low as 6A volts at its maximum.
TIP41CN Features
the DC current gain for this device is 15 @ 3A 4V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
TIP41CN Applications
There are a lot of STMicroelectronics
TIP41CN applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP41CN More Descriptions
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 100V 6A 3-Pin(3 Tab) TO-220 T/R
Bipolar Transistors - BJT NPN 100 Volt 6 Amp
Trans GP BJT NPN 100V 6A 3-Pin(3 Tab) TO-220 T/R
Bipolar Transistors - BJT NPN 100 Volt 6 Amp
The three parts on the right have similar specifications to TIP41CN.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberPin CountNumber of ElementsElement ConfigurationTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionSurface MountNumber of TerminalsHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOperating Temperature (Max)ConfigurationCase ConnectionTransition FrequencyPower Dissipation-Max (Abs)Collector Current-Max (IC)DC Current Gain-Min (hFE)Collector-Emitter Voltage-MaxVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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TIP41CNThrough HoleThrough HoleTO-220-33SILICON150°C TJTubee3yesObsolete1 (Unlimited)3EAR99TINOther Transistors100V65W6ATIP4131SingleSWITCHINGNPNNPN100V6A15 @ 3A 4V700μATO-220AB1.5V @ 600mA, 6A100V100V5V15NoROHS3 CompliantLead Free--------------------------------------
-
-Through HoleTO-220-3--150°C TJTube--Obsolete1 (Unlimited)-------TIP49-----NPN--30 @ 300mA 10V1mA-1V @ 200mA, 1A-------TO-220-32W350V1A10MHz--------------------------------
-
----SILICON--e0icon-pbfree no---EAR99Tin/Lead (Sn/Pb)Other Transistors----31-SWITCHINGNPN-----TO-220AB------Non-RoHS Compliant------NO38541.29.00.95SINGLETHROUGH-HOLENOT SPECIFIEDcompliantNOT SPECIFIEDR-PSFM-T3Not Qualified150°CSINGLECOLLECTOR3MHz65W6A1540V--------------
-
-------------------------------------------------------------100V1.5V @ 600mA, 6APNPTO-220AB-65WTubeTO-220-3150°C (TJ)Through Hole-15 @ 3A, 4V700µA6A
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