ON Semiconductor TIP147G
- Part Number:
- TIP147G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465511-TIP147G
- Description:
- TRANS PNP DARL 100V 10A TO247
- Datasheet:
- TIP147G
ON Semiconductor TIP147G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor TIP147G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time2 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Surface MountNO
- Number of Pins3
- Weight6.500007g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-100V
- Max Power Dissipation125W
- Peak Reflow Temperature (Cel)260
- Current Rating-10A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberTIP14*
- Pin Count3
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation125W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current10A
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A 4V
- Current - Collector Cutoff (Max)2mA
- Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 10A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency4MHz
- Collector Emitter Saturation Voltage2V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- Height12.2mm
- Length15.2mm
- Width4.9mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TIP147G Overview
In this device, the DC current gain is 1000 @ 5A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 40mA, 10A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -10A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
TIP147G Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 4MHz
TIP147G Applications
There are a lot of ON Semiconductor
TIP147G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 1000 @ 5A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 40mA, 10A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -10A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
TIP147G Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 4MHz
TIP147G Applications
There are a lot of ON Semiconductor
TIP147G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP147G More Descriptions
10 A, 100 V PNP Darlington Bipolar Power Transistor
TIP Series 100 V 10 A PNP Darlington Complementary Silicon Transistor - TO-247
Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-247, Plastic/Epoxy, 3 Pin
Transistor Darlington PNP 100V 10A 3-Pin TO-247 Rail - Rail/Tube
Darlington Transistor 10 A 100 V Hfe:500 4-Pin TO-247 | ON Semiconductor TIP147G
TRANSISTOR, BIPOL, PNP, 100V, TO-247-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -100V; Transition Frequency ft: -; Power Dissipation Pd: 125W; DC Collector Current: -10A; DC Current Gain hFE: 500hFE; Tran
Bipolar Transistor, Pnp, -100V, To-247; Transistor Polarity:Pnp; Collector Emitter Voltage Max:100V; Continuous Collector Current:10A; Power Dissipation:125W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi TIP147G.
TIP Series 100 V 10 A PNP Darlington Complementary Silicon Transistor - TO-247
Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-247, Plastic/Epoxy, 3 Pin
Transistor Darlington PNP 100V 10A 3-Pin TO-247 Rail - Rail/Tube
Darlington Transistor 10 A 100 V Hfe:500 4-Pin TO-247 | ON Semiconductor TIP147G
TRANSISTOR, BIPOL, PNP, 100V, TO-247-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -100V; Transition Frequency ft: -; Power Dissipation Pd: 125W; DC Collector Current: -10A; DC Current Gain hFE: 500hFE; Tran
Bipolar Transistor, Pnp, -100V, To-247; Transistor Polarity:Pnp; Collector Emitter Voltage Max:100V; Continuous Collector Current:10A; Power Dissipation:125W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi TIP147G.
The three parts on the right have similar specifications to TIP147G.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Reach Compliance CodeVoltage - Collector Emitter Breakdown (Max)Frequency - TransitionView Compare
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TIP147GACTIVE (Last Updated: 2 days ago)2 WeeksThrough HoleTO-247-3NO36.500007gSILICON-65°C~150°C TJTube2000e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-100V125W260-10A40TIP14*31PNPSingle125WCOLLECTORSWITCHINGPNP - Darlington100V10A1000 @ 5A 4V2mA3V @ 40mA, 10A100V4MHz2V100V5V12.2mm15.2mm4.9mmNo SVHCNoROHS3 CompliantLead Free------------------
-
--------------------------------------------------100V2.5V @ 8mA, 2APNP - DarlingtonTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole-1000 @ 1A, 4V2mA2A---
-
--------------------------------------------------100V2.5V @ 8mA, 2APNP - DarlingtonTO-220AB-2WTubeTO-220-3150°C (TJ)Through Hole-1000 @ 1A, 4V2mA2A---
-
-14 WeeksThrough HoleTO-220-3-----65°C~150°C TJBulk2017e0-Active1 (Unlimited)--Tin/Lead (Sn/Pb)---NOT SPECIFIED-NOT SPECIFIED--------PNP - Darlington--1000 @ 1A 4V-2.5V @ 8mA, 2A----------Non-RoHS Compliant---------------not_compliant100V25MHz
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