ON Semiconductor TF252TH-5-TL-H
- Part Number:
- TF252TH-5-TL-H
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2499185-TF252TH-5-TL-H
- Description:
- JFET N-CH 0.1W 3VTFP
- ECAD Model:
-
- Datasheet:
- TF252TH-5-TL-H
ON Semiconductor TF252TH-5-TL-H technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor TF252TH-5-TL-H.
- Mounting TypeSurface Mount
- Package / Case3-SMD, Flat Lead
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee6
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Bismuth (Sn/Bi)
- HTS Code8541.21.00.95
- Max Power Dissipation100mW
- Terminal PositionDUAL
- Base Part NumberTF252
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Operating ModeDEPLETION MODE
- Power Dissipation100mW
- FET TypeN-Channel
- Transistor ApplicationAMPLIFIER
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds3.1pF @ 2V
- Breakdown Voltage20V
- Drain to Source Voltage (Vdss)2V
- Continuous Drain Current (ID)1mA
- Drain Current-Max (Abs) (ID)0.001A
- FET TechnologyJUNCTION
- Current - Drain (Idss) @ Vds (Vgs=0)210μA @ 2V
- Voltage - Cutoff (VGS off) @ Id1V @ 1μA
- Height340μm
- Length1.4mm
- Width800μm
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
TF252TH-5-TL-H Description
A junction field effect transistor (JFET) is the the simplest type of three-terminal semiconductor transistor. JFETs are widely employed as electronically controlled switches, voltage-controlled resistors and amplifiers.
TF252TH-5-TL-H Features
·High gain:Gv=1.0dBtyp(VcC=2VRL=2.2kQ.Cin=5pFVIN=10mVf-1kHz) ·Ultrasmall package facilitates miniaturization in end products ·Best suited for use in electret condenser microphone for audio equipments and telephones ·Excellent voltage characteristics.Excellent transient characteristics ·Adoption of FBET process ·Halogen free compliance
TF252TH-5-TL-H Applications 2-.3-or 4-Series cell li-ion battery-powered products(NVDC or Non-NVDC Wall-powered designs,particularly from 12-V supply
TF252TH-5-TL-H Features
·High gain:Gv=1.0dBtyp(VcC=2VRL=2.2kQ.Cin=5pFVIN=10mVf-1kHz) ·Ultrasmall package facilitates miniaturization in end products ·Best suited for use in electret condenser microphone for audio equipments and telephones ·Excellent voltage characteristics.Excellent transient characteristics ·Adoption of FBET process ·Halogen free compliance
TF252TH-5-TL-H Applications 2-.3-or 4-Series cell li-ion battery-powered products(NVDC or Non-NVDC Wall-powered designs,particularly from 12-V supply
TF252TH-5-TL-H More Descriptions
JFET N-Channel 20V 140-350uA 1.4mS VTFP3 | ON Semiconductor TF252TH-5-TL-H
Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET
Trans JFET N-CH 1mA 3-Pin VTFP T/R - Tape and Reel
JFET, N CH 20V 0.1A VTFP; Transistor Type:JFET; Transistor Polarity:N Channel; Voltage V(br)gss:20V; Min Current Idss:140µA; Max Current Idss:350µA; Max Voltage Vgs Off:1V; Case Style:VTFP; Termination Type:SMD; Max Voltage Vd ;RoHS Compliant: Yes
Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET
Trans JFET N-CH 1mA 3-Pin VTFP T/R - Tape and Reel
JFET, N CH 20V 0.1A VTFP; Transistor Type:JFET; Transistor Polarity:N Channel; Voltage V(br)gss:20V; Min Current Idss:140µA; Max Current Idss:350µA; Max Voltage Vgs Off:1V; Case Style:VTFP; Termination Type:SMD; Max Voltage Vd ;RoHS Compliant: Yes
The three parts on the right have similar specifications to TF252TH-5-TL-H.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeMax Power DissipationTerminal PositionBase Part NumberPin CountNumber of ElementsElement ConfigurationOperating ModePower DissipationFET TypeTransistor ApplicationHalogen FreeInput Capacitance (Ciss) (Max) @ VdsBreakdown VoltageDrain to Source Voltage (Vdss)Continuous Drain Current (ID)Drain Current-Max (Abs) (ID)FET TechnologyCurrent - Drain (Idss) @ Vds (Vgs=0)Voltage - Cutoff (VGS off) @ IdHeightLengthWidthRoHS StatusLead FreeLifecycle StatusSupplier Device PackagePower - MaxCurrent Drain (Id) - MaxView Compare
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TF252TH-5-TL-HSurface Mount3-SMD, Flat LeadYES3SILICON150°C TJTape & Reel (TR)2007e6yesObsolete1 (Unlimited)3EAR99Tin/Bismuth (Sn/Bi)8541.21.00.95100mWDUALTF25231SingleDEPLETION MODE100mWN-ChannelAMPLIFIERHalogen Free3.1pF @ 2V20V2V1mA0.001AJUNCTION210μA @ 2V1V @ 1μA340μm1.4mm800μmRoHS CompliantLead Free----- -
Surface Mount3-SMD, Flat Lead-3-150°C TJTape & Reel (TR)2007e6yesObsolete1 (Unlimited)-EAR99Tin/Bismuth (Sn/Bi)-30mW-TF2523-Single--N-Channel-Halogen Free3.1pF @ 2V--1mA--210μA @ 2V100mV @ 1μA270μm600μm800μmRoHS CompliantLead FreeLIFETIME (Last Updated: 2 weeks ago)---
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Surface Mount3-SMD, Flat Lead---150°C TJTape & Reel (TR)---Last Time Buy1 (Unlimited)------------N-Channel--3.1pF @ 2V-----140μA @ 2V100mV @ 1μA---ROHS3 Compliant--3-VTFP100mW1mA
-
Surface Mount3-SMD, Flat Lead-3-150°C TJTape & Reel (TR)2012e6yesObsolete1 (Unlimited)-EAR99Tin/Bismuth (Sn/Bi)-100mW-TF2563-Single-100mWN-Channel-Halogen Free3.1pF @ 2V--1mA--100μA @ 2V100mV @ 1μA---RoHS CompliantLead Free----
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