Vishay Siliconix SI4946BEY-T1-E3

Name: SI4946BEY-T1-E3
Brand: Vishay Siliconix
SKU: 2473285-SI4946BEY-T1-E3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI4946BEY-T1-E3

Manufacturer:: Vishay Siliconix

Ventron No:: 2473285-SI4946BEY-T1-E3

Description:: MOSFET 2N-CH 60V 6.5A 8-SOIC

ECAD Model:

Datasheet:: SI4946BEY-T1-E3

Specifications

Vishay Siliconix SI4946BEY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4946BEY-T1-E3.

Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
506.605978mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2007
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
41mOhm
Terminal Finish
MATTE TIN
Max Power Dissipation
2.4W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
SI4946
Pin Count
8
Number of Elements
2
Number of Channels
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.4W
Turn On Delay Time
10 ns
Power - Max
3.7W
FET Type
2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs
41m Ω @ 5.3A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
840pF @ 30V
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Rise Time
12ns
Drain to Source Voltage (Vdss)
60V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
25 ns
Continuous Drain Current (ID)
6.5A
Threshold Voltage
2.4V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
5.3A
Drain to Source Breakdown Voltage
60V
Pulsed Drain Current-Max (IDM)
30A
FET Technology
METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)
175°C
FET Feature
Logic Level Gate
Height
1.75mm
Length
5mm
Width
4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI4946BEY-T1-E3 Description
The SI4946BEY-T1-E3 is a Dual N-Channel 60-V (D-S) 175 °C MOSFET. The SI4946BEY-T1-E3 is a 60V Dual N-channel TrenchFET® Power MOSFET. The surface-mounted LITTLE FOOT® power MOSFET makes use of integrated circuits and small-signal packages that have undergone modifications to give the enhanced heat transfer capabilities needed by power devices.

SI4946BEY-T1-E3 Features
175 °C Maximum Junction Temperature
100 % Rg Tested
Compliant to RoHS directive 2002/95/EC
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFET

SI4946BEY-T1-E3 Applications
Power Management
Automotive electronics
SMPS ( switch mode power supply )
DC relay in electronics
Digital circuits

SI4946BEY-T1-E3 More Descriptions

Dual N-channel MOSFET Transistor 6.5 A 60 V 8-Pin SOIC | Siliconix / Vishay SI4946BEY-T1-E3
Trans MOSFET N-CH 60V 6.5A 8-Pin SOIC N T/R / MOSFET 2N-CH 60V 6.5A 8-SOIC
SI4946 Series 60 V 0.041 Ohm 25 nC Dual N-Channel SMT Power Mosfet - SOIC-8
Power Field-Effect Transistor, 6.5A I(D), 60V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Transistor Polarity:N Channel Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.4V; Power Dissipation Pd:3.7W
Transistors - FETs, MOSFETs - Arrays 1 (Unlimited) Tape & Reel (TR) 8-SOIC (0.154, 3.90mm Width) Surface Mount 2 N-Channel (Dual) Logic Level Gate -55°C~175°C TJ 41m Ω @ 5.3A, 10V 3V @ 250μA MOSFET 2N-CH 60V 6.5A 8-SOIC
Dual N Channel Mosfet, 60V, Soic, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds N Channel:60V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:6.5A; Continuous Drain Current Id P Channel:- Rohs Compliant: No |Vishay SI4946BEY-T1-E3.
MOSFET, DUAL, N, SOIC; Transistor Type:MOSFET; Transistor Polarity:Dual N; Voltage, Vds Typ:60V; Current, Id Cont:6.5A; Resistance, Rds On:0.041ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.4V; Case Style:SOIC; Termination Type:SMD; Operating Temperature Range:-50°C to 175°C; Base Number:4946; N-channel Gate Charge:9.2nC; No. of Pins:8; Resistance, Rds on @ Vgs = 10V:0.041ohm; Resistance, Rds on @ Vgs = 4.5V:0.052ohm; Voltage, Vds Max:60V

Product Comparison

The three parts on the right have similar specifications to SI4946BEY-T1-E3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Number of Channels

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

Power - Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

FET Technology

Max Junction Temperature (Tj)

FET Feature

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Current - Continuous Drain (Id) @ 25°C

Drain to Source Resistance

Rds On Max

Pbfree Code

Subcategory

Reach Compliance Code

Qualification Status

Transistor Application

View Compare
SI4946BEY-T1-E3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

506.605978mg

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

TrenchFET®

2007

e3

Active

1 (Unlimited)

8

EAR99

41mOhm

MATTE TIN

2.4W

GULL WING

260

40

SI4946

8

2

2

Dual

ENHANCEMENT MODE

2.4W

10 ns

3.7W

2 N-Channel (Dual)

41m Ω @ 5.3A, 10V

3V @ 250μA

840pF @ 30V

25nC @ 10V

12ns

60V

10 ns

25 ns

6.5A

2.4V

20V

5.3A

60V

30A

METAL-OXIDE SEMICONDUCTOR

175°C

Logic Level Gate

1.75mm

5mm

4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
SI4914DY-T1-E3

Vishay Siliconix

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

186.993455mg

-

-55°C~150°C TJ

Tape & Reel (TR)

LITTLE FOOT®

2009

-

Obsolete

1 (Unlimited)

-

-

-

-

1.16W

-

-

-

SI4914

-

2

2

-

-

-

7 ns

1.1W 1.16W

2 N-Channel (Half Bridge)

23mOhm @ 7A, 10V

2.5V @ 250μA

-

8.5nC @ 4.5V

13ns

30V

13 ns

35 ns

5.7A

-

20V

-

30V

-

-

-

Logic Level Gate

1.55mm

5mm

4mm

-

-

ROHS3 Compliant

-

8-SO

150°C

-55°C

5.5A 5.7A

20mOhm

23 mΩ

-

-

-

-

-

SI4946BEY-T1-E3 vs SI4914DY-T1-E3
SI4963BDY-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

186.993455mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

2016

e3

Active

1 (Unlimited)

8

EAR99

-

Matte Tin (Sn)

1.1W

GULL WING

260

40

SI4963

8

2

-

Dual

ENHANCEMENT MODE

1.1W

30 ns

-

2 P-Channel (Dual)

32m Ω @ 6.5A, 4.5V

1.4V @ 250μA

-

21nC @ 4.5V

40ns

20V

55 ns

80 ns

4.9A

-

12V

-

-

-

METAL-OXIDE SEMICONDUCTOR

-

Logic Level Gate

1.55mm

5mm

4mm

-

No

ROHS3 Compliant

-

-

-

-

-

-

-

yes

Other Transistors

-

-

-

SI4946BEY-T1-E3 vs SI4963BDY-T1-GE3
SI4974DY-T1-E3

Vishay Siliconix

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

e3

Obsolete

1 (Unlimited)

8

EAR99

-

MATTE TIN

1.1W

GULL WING

260

40

SI4974

8

2

-

Dual

ENHANCEMENT MODE

2W

-

-

2 N-Channel (Dual)

19m Ω @ 8A, 10V

3V @ 250μA

-

11nC @ 4.5V

11ns

-

6 ns

15 ns

6A

-

20V

4.4A

30V

-

METAL-OXIDE SEMICONDUCTOR

-

Logic Level Gate

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

6A 4.4A

-

-

yes

FET General Purpose Power

unknown

Not Qualified

SWITCHING

SI4946BEY-T1-E3 vs SI4974DY-T1-E3

Certification

Related parts for SI4946BEY-T1-E3

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SI4946BEY-T1-E3 Specification

Part Number	Manufacturers	Description	Stock	Price
SI4946BEY-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 60V 5.3A 8-Pin SOIC N T/R RoHS: Compliant	1150	1 $1.0679 10 $0.9687 25 $0.9642 100 $0.7945 250 $0.7866 500 $0.6595 1000 $0.5662
SI4946BEY-T1-E3 DISTI #	Vishay Siliconix	MOSFET 2N-CH 60V 6.5A 8-SOIC RoHS: Compliant	38780	1 $1.4 10 $1.237 100 $0.9777 500 $0.75818 1000 $0.59857
SI4946BEY-T1-E3 DISTI #	Vishay Siliconix	MOSFET 2N-CH 60V 6.5A 8-SOIC RoHS: Compliant	38780	1 $1.4 10 $1.237 100 $0.9777 500 $0.75818 1000 $0.59857
SI4946BEY-T1-E3 DISTI #	Vishay Siliconix	MOSFET 2N-CH 60V 6.5A 8-SOIC RoHS: Compliant	37500	2500 $0.54239
SI4946BEY-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 60V 5.3A 8-Pin SOIC N T/R RoHS: Compliant	40000	2500 $0.4445 5000 $0.4313 10000 $0.4142 15000 $0.402 25000 $0.391
SI4946BEY-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 60V 5.3A 8-Pin SOIC N T/R RoHS: Compliant	1980	10 $1.3642 50 $0.9193 100 $0.802 250 $0.7778
SI4946BEY-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 60V 5.3A 8-Pin SOIC N T/R RoHS: Compliant	1150	15 $0.9687 25 $0.9642 100 $0.7945 250 $0.7866 500 $0.6595 1000 $0.5662
SI4946BEY-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 60V 5.3A 8-Pin SOIC N T/R - Tape RoHS: Not Compliant	2500	2500 $0.4409 5000 $0.4279 10000 $0.4109 15000 $0.3989 25000 $0.3879
87K0417 DISTI #	Vishay Intertechnologies	DUAL N-CHANNEL 60-V (D-S) MOSFET (Alt: SI4946BEY-T RoHS: Compliant	87000	2500 $0.7429 5000 $0.5069 10000 $0.4359 15000 $0.4029 25000 $0.3749
SI4946BEY-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 60V 5.3A 8-Pin SOIC N T/R (Alt: RoHS: Compliant	0
SI4946BEY-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 60V 5.3A 8-Pin SOIC N T/R - Tape RoHS: Not Compliant	0	1 $0.745 5000 $0.718 10000 $0.69
SI4946BEY-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 60V 5.3A 8-Pin SOIC N T/R - Prod RoHS: Not Compliant	0	1 $1.85 10 $1.52 25 $1.4 50 $1.28 100 $1.16 250 $1.08 500 $1
SI4946BEY-T1-E3 DISTI #	Vishay Intertechnologies	DUAL N CHANNEL MOSFET, 60V, SOIC, Transistor Pola	2369	1 $1.85 10 $1.52 25 $1.4 50 $1.28 100 $1.16 250 $1.08 500 $1
SI4946BEY-T1-E3 DISTI #	Vishay Intertechnologies	DUAL N CHANNEL MOSFET, 60V, SOIC, FULL REEL, Tran	2500	1 $0.778 2500 $0.745 5000 $0.718 10000 $0.69
SI4946BEY-T1-E3 DISTI #	Vishay Intertechnologies	Dual MOSFET, Dual N Channel, 6.5 A, 60 V, 0.033 oh	13742	1 $1.65 10 $1.39 25 $1.29 50 $1.19 100 $1.09 250 $1.03 500 $0.959
SI4946BEY-T1-E3. DISTI #	Vishay Intertechnologies	DUAL N-CHANNEL 60-V (D-S) MOSFET , ROHS COMPLIANT:	2500	1 $0.794 2500 $0.745 5000 $0.718 10000 $0.69
SI4946BEY-T1-E3 DISTI #	Vishay Siliconix	SI4946BEY-T1-E3 Dual N-channel MOSFET Transistor, RoHS: Compliant	4094	1 $1.01 25 $0.97 100 $0.88 250 $0.83 500 $0.76
SI4946BEY-T1-E3 DISTI #	Vishay Intertechnologies	SI4946 Series 60 V 0.041 Ohm 25 nC Dual N-Channel RoHS: Compliant	10	1 $1.05 250 $0.84 500 $0.815 750 $0.8 1500 $0.76
SI4946BEY-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET 60V 6.5A 3.7W RoHS: Compliant	9370	1 $1.54 10 $1.27 100 $0.97 500 $0.834 1000 $0.659 2500 $0.615 5000 $0.584 10000 $0.562
SI4946BEY-T1-E3 DISTI #	Vishay Intertechnologies		3838
SI4946BEY-T1-E3 DISTI #	Vishay Intertechnologies		2515
SI4946BEY-T1-E3 DISTI #	Vishay Siliconix	MOSFET Transistor, Matched Pair, N-Channel, SO	10	1 $1.08 6 $0.81
SI4946BEY-T1-E3 DISTI #	Vishay Siliconix	MOSFET Transistor, Matched Pair, N-Channel, SO	32	1 $2.6892 3 $2.0169 13 $1.6808
SI4946BEY-T1-E3 DISTI #	Vishay Intertechnologies	Transistor: N-MOSFET x2, unipolar, 60V, 4.4A,	3011	1 $0.6811 5 $0.6129 25 $0.5413 100 $0.5026 500 $0.4696
SI4946BEYT1E3 DISTI #	Vishay Intertechnologies	RoHS: Compliant	20000
SI4946BEY-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 60V 5.3A 8-Pin SOIC N T/R RoHS: Compliant	9	1 $1.98
SI4946BEY-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 60V 5.3A 8-Pin SOIC N T/R RoHS: Compliant	1980	1 $2.2 10 $1.07 50 $0.721 100 $0.629 250 $0.61 500 $0.538
SI4946BEY-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 60V 5.3A 8-Pin SOIC N T/R RoHS: Compliant	1150	10 $0.9629 25 $0.9492 100 $0.7936 250 $0.7861
SI4946BEY-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 60V 5.3A 8-Pin SOIC N T/R RoHS: Compliant	41948	2500 $0.465
SI4946BEY-T1-E3 DISTI #	Vishay Intertechnologies	DUAL N CHANNEL MOSFET, 60V, SOIC RoHS: Compliant	44951	5 $1.18 25 $1.07 100 $0.84 250 $0.749 500 $0.657
SI4946BEY-T1-E3 DISTI #	Vishay Intertechnologies	DUAL N CHANNEL MOSFET, 60V, SOIC RoHS: Compliant	0	1 $2.44 10 $2.01 100 $1.54 500 $1.33 1000 $1.05 2500 $1.03
SI4946BEY-T1-E3 DISTI #	Vishay Intertechnologies	DUAL N CHANNEL MOSFET, 60V, SOIC RoHS: Compliant	23771	1 $2.44 10 $2.01 100 $1.54 500 $1.33 1000 $1.05 2500 $1.03
SI4946BEY-T1-E3 DISTI #	Vishay Siliconix	RoHS: Compliant	254057	2500 $1.37 254057 $1.25
SI4946BEY-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET 60V 6.5A 3.7W	0

SI4946B~~(4)~~
SI4946~~(14)~~
SI494~~(69)~~
SI49~~(180)~~
SI4~~(201)~~

Vishay Siliconix SI4946BEY-T1-E3

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