Vishay Siliconix SI4914DY-T1-E3

Name: SI4914DY-T1-E3
Brand: Vishay Siliconix
SKU: 3554034-SI4914DY-T1-E3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI4914DY-T1-E3

Manufacturer:: Vishay Siliconix

Ventron No:: 3554034-SI4914DY-T1-E3

Description:: MOSFET 2N-CH 30V 5.5A 8-SOIC

ECAD Model:

Datasheet:: SI4914DY-T1-E3

Specifications

Vishay Siliconix SI4914DY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4914DY-T1-E3.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Supplier Device Package
8-SO
Weight
186.993455mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
LITTLE FOOT®
Published
2009
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.16W
Base Part Number
SI4914
Number of Elements
2
Number of Channels
2
Turn On Delay Time
7 ns
Power - Max
1.1W 1.16W
FET Type
2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs
23mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C
5.5A 5.7A
Gate Charge (Qg) (Max) @ Vgs
8.5nC @ 4.5V
Rise Time
13ns
Drain to Source Voltage (Vdss)
30V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
35 ns
Continuous Drain Current (ID)
5.7A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
FET Feature
Logic Level Gate
Drain to Source Resistance
20mOhm
Rds On Max
23 mΩ
Height
1.55mm
Length
5mm
Width
4mm
RoHS Status
ROHS3 Compliant

Description

SI4914DY-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI4914DY-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI4914DY-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

SI4914DY-T1-E3 More Descriptions

MOSFET 2N-CH 30V 5.5A 8-SOIC
Dual MOSFETs DUAL N-CH 30V (D-S) W/SCHOTTKY
OBSOLETE - USE SI4914BDY-T1-E3
French Electronic Distributor since 1988

Product Comparison

The three parts on the right have similar specifications to SI4914DY-T1-E3.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Max Power Dissipation

Base Part Number

Number of Elements

Number of Channels

Turn On Delay Time

Power - Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

FET Feature

Drain to Source Resistance

Rds On Max

Height

Length

Width

RoHS Status

Factory Lead Time

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Element Configuration

Operating Mode

Transistor Application

FET Technology

Radiation Hardening

Reach Compliance Code

Qualification Status

Power Dissipation

Drain Current-Max (Abs) (ID)

View Compare
SI4914DY-T1-E3

Vishay Siliconix

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

8-SO

186.993455mg

-55°C~150°C TJ

Tape & Reel (TR)

LITTLE FOOT®

2009

Obsolete

1 (Unlimited)

150°C

-55°C

1.16W

SI4914

2

2

7 ns

1.1W 1.16W

2 N-Channel (Half Bridge)

23mOhm @ 7A, 10V

2.5V @ 250μA

5.5A 5.7A

8.5nC @ 4.5V

13ns

30V

13 ns

35 ns

5.7A

20V

30V

Logic Level Gate

20mOhm

23 mΩ

1.55mm

5mm

4mm

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SI4941EDY-T1-E3

Vishay Siliconix

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

8-SO

186.993455mg

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

Obsolete

1 (Unlimited)

150°C

-55°C

2W

SI4941

-

2

5.5 μs

3.6W

2 P-Channel (Dual)

21mOhm @ 8.3A, 10V

2.8V @ 250μA

10A

70nC @ 10V

11μs

30V

24 μs

30 μs

10A

20V

-

Logic Level Gate

21mOhm

21 mΩ

1.55mm

5mm

4mm

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SI4914DY-T1-E3 vs SI4941EDY-T1-E3
SI4925BDY-T1-GE3

Vishay Siliconix

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

186.993455mg

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

Active

1 (Unlimited)

-

-

1.1W

SI4925

2

2

9 ns

-

2 P-Channel (Dual)

25m Ω @ 7.1A, 10V

3V @ 250μA

5.3A

50nC @ 10V

12ns

30V

12 ns

60 ns

-5.3A

20V

-30V

Logic Level Gate

-

-

-

-

-

ROHS3 Compliant

14 Weeks

SILICON

e3

yes

8

EAR99

PURE MATTE TIN

Other Transistors

GULL WING

260

30

8

Dual

ENHANCEMENT MODE

SWITCHING

METAL-OXIDE SEMICONDUCTOR

No

-

-

-

-

SI4914DY-T1-E3 vs SI4925BDY-T1-GE3
SI4974DY-T1-E3

Vishay Siliconix

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

Obsolete

1 (Unlimited)

-

-

1.1W

SI4974

2

-

-

-

2 N-Channel (Dual)

19m Ω @ 8A, 10V

3V @ 250μA

6A 4.4A

11nC @ 4.5V

11ns

-

6 ns

15 ns

6A

20V

30V

Logic Level Gate

-

-

-

-

-

ROHS3 Compliant

-

SILICON

e3

yes

8

EAR99

MATTE TIN

FET General Purpose Power

GULL WING

260

40

8

Dual

ENHANCEMENT MODE

SWITCHING

METAL-OXIDE SEMICONDUCTOR

-

unknown

Not Qualified

2W

4.4A

SI4914DY-T1-E3 vs SI4974DY-T1-E3