Vishay Siliconix SI1972DH-T1-E3
- Part Number:
- SI1972DH-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2477835-SI1972DH-T1-E3
- Description:
- MOSFET 2N-CH 30V 1.3A SC70-6
- ECAD Model:
-
- Datasheet:
- SI1972DH-T1-E3
Vishay Siliconix SI1972DH-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI1972DH-T1-E3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance190mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- Max Power Dissipation740mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberSI1972
- Pin Count6
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation740mW
- Turn On Delay Time5 ns
- Power - Max1.25W
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs225m Ω @ 1.3A, 10V
- Vgs(th) (Max) @ Id2.8V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds75pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs2.8nC @ 10V
- Rise Time10ns
- Drain to Source Voltage (Vdss)30V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time10 ns
- Continuous Drain Current (ID)1.3A
- Threshold Voltage2.8V
- Gate to Source Voltage (Vgs)20V
- DS Breakdown Voltage-Min30V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureStandard
- Nominal Vgs2.8 V
- Height1mm
- Length2mm
- Width1.25mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI1972DH-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI1972DH-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI1972DH-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI1972DH-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI1972DH-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI1972DH-T1-E3 More Descriptions
Trans MOSFET N-CH 30V 1.3A 6-Pin SC-70 T/R
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:1300mA; On Resistance, Rds(on):0.344ohm; Rds(on) Test Voltage, Vgs:20V ;RoHS Compliant: Yes
MOSFET, NN CH, 30V, 1.3A, SC70; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:1.25W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-363; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.3A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):155mohm; Power Dissipation Pd:1.25W
MOSFET, DUAL, N, SC-70; Transistor Type:MOSFET; Transistor Polarity:Dual N; Voltage, Vds Typ:30V; Current, Id Cont:1.3A; Resistance, Rds On:0.19ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.8V; Case Style:SOT-323 (SC-70); Termination Type:SMD; Base Number:1972; Current, Idm Pulse:4A; N-channel Gate Charge:0.91nC; No. of Pins:6; Power Dissipation:1.25mW; Power, Pd:1.25W; Resistance, Rds on @ Vgs = 10V:0.19ohm; Resistance, Rds on @ Vgs = 4.5V:0.344ohm; Voltage, Rds Measurement:10V; Voltage, Vds Max:30V; Voltage, Vgs th Max:2.8V; Voltage, Vgs th Min:1.5V
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:1300mA; On Resistance, Rds(on):0.344ohm; Rds(on) Test Voltage, Vgs:20V ;RoHS Compliant: Yes
MOSFET, NN CH, 30V, 1.3A, SC70; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:1.25W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-363; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.3A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):155mohm; Power Dissipation Pd:1.25W
MOSFET, DUAL, N, SC-70; Transistor Type:MOSFET; Transistor Polarity:Dual N; Voltage, Vds Typ:30V; Current, Id Cont:1.3A; Resistance, Rds On:0.19ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.8V; Case Style:SOT-323 (SC-70); Termination Type:SMD; Base Number:1972; Current, Idm Pulse:4A; N-channel Gate Charge:0.91nC; No. of Pins:6; Power Dissipation:1.25mW; Power, Pd:1.25W; Resistance, Rds on @ Vgs = 10V:0.19ohm; Resistance, Rds on @ Vgs = 4.5V:0.344ohm; Voltage, Rds Measurement:10V; Voltage, Vds Max:30V; Voltage, Vgs th Max:2.8V; Voltage, Vgs th Min:1.5V
The three parts on the right have similar specifications to SI1972DH-T1-E3.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationOperating ModePower DissipationTurn On Delay TimePower - MaxFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)DS Breakdown Voltage-MinFET TechnologyFET FeatureNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminationDrain to Source Breakdown VoltageDual Supply VoltageCurrent - Continuous Drain (Id) @ 25°CDrain Current-Max (Abs) (ID)View Compare
-
SI1972DH-T1-E3Surface MountSurface Mount6-TSSOP, SC-88, SOT-3636SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3yesObsolete1 (Unlimited)6EAR99190mOhmMatte Tin (Sn)FET General Purpose Power740mWGULL WING26040SI197262DualENHANCEMENT MODE740mW5 ns1.25W2 N-Channel (Dual)SWITCHING225m Ω @ 1.3A, 10V2.8V @ 250μA75pF @ 15V2.8nC @ 10V10ns30V10 ns10 ns1.3A2.8V20V30VMETAL-OXIDE SEMICONDUCTORStandard2.8 V1mm2mm1.25mmUnknownNoROHS3 CompliantLead Free------ -
Surface MountSurface Mount6-TSSOP, SC-88, SOT-3636SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3yesObsolete1 (Unlimited)6EAR99340mOhmMATTE TINFET General Purpose Powers740mWGULL WING26040SI195862DualENHANCEMENT MODE740mW8 ns1.25W2 N-Channel (Dual)SWITCHING205m Ω @ 1.3A, 4.5V1.6V @ 250μA105pF @ 10V3.8nC @ 10V25ns-25 ns10 ns1.3A1.6V12V-METAL-OXIDE SEMICONDUCTORLogic Level Gate1.6 V---No SVHCNoROHS3 CompliantLead FreeSMD/SMT20V20V--
-
Surface MountSurface Mount6-TSSOP, SC-88, SOT-3636SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3-Obsolete1 (Unlimited)6EAR99490mOhmMatte Tin (Sn)Other Transistors570mWGULL WING--SI191362DualENHANCEMENT MODE740mW150 ns-2 P-Channel (Dual)SWITCHING490m Ω @ 880mA, 4.5V450mV @ 100μA-1.8nC @ 4.5V480ns-850 ns840 ns-1A-450mV12V-METAL-OXIDE SEMICONDUCTORLogic Level Gate-450 mV---UnknownNoROHS3 CompliantLead Free-20V-880mA0.88A
-
Surface MountSurface Mount6-TSSOP, SC-88, SOT-3636SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3yesObsolete1 (Unlimited)6EAR99168mOhmMATTE TINFET General Purpose Power740mWGULL WING26040SI198862DualENHANCEMENT MODE740mW8 ns1.25W2 N-Channel (Dual)SWITCHING168m Ω @ 1.4A, 4.5V1V @ 250μA110pF @ 10V4.1nC @ 8V20ns20V20 ns15 ns1.3A1V8V-METAL-OXIDE SEMICONDUCTORLogic Level Gate1 V---UnknownNoROHS3 CompliantLead Free-20V---
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
01 December 2023
LM2575 Adjustable Voltage Regulator Manufacturer, Layout Guidelines, Applications and Other Details
Ⅰ. What is LM2575?Ⅱ. Manufacturer of LM2575 voltage regulatorⅢ. What are the features of LM2575 voltage regulator?Ⅳ. The pin configuration of LM2575 voltage regulatorⅤ. How does the LM2575... -
01 December 2023
KA3525A PWM Controller Symbol, Equivalents, Working Principle and Applications
Ⅰ. What is PWM controller?Ⅱ. Overview of KA3525A PWM controllerⅢ. KA3525A symbol, footprint and pin configurationⅣ. Technical parameters of KA3525AⅤ. How does the KA3525A PWM controller work?Ⅵ. What... -
04 December 2023
TJA1043 CAN Transceiver: Features, Working Modes, Specifications and Applications
Ⅰ. Overview of TJA1043Ⅱ. What are the features of TJA1043 CAN transceiver?Ⅲ. Pin configuration of TJA1043 CAN transceiverⅣ. Working modes of TJA1043 CAN transceiverⅤ. How does the TJA1043... -
04 December 2023
An Overview of L297 Stepper Motor Controller
Ⅰ. What is a stepper motor driver?Ⅱ. Overview of L297Ⅲ. What are the features of L297 stepper motor controller?Ⅳ. Pin configuration of L297 stepper motor controllerⅤ. Structure and...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.