Cypress Semiconductor Corp S70GL02GT11FHA010
- Part Number:
- S70GL02GT11FHA010
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3229700-S70GL02GT11FHA010
- Description:
- IC 1GB MEMORY
- Datasheet:
- S70GL02GT11FHA010
Cypress Semiconductor Corp S70GL02GT11FHA010 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S70GL02GT11FHA010.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case64-LBGA
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2016
- SeriesGL-T
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations64
- HTS Code8542.32.00.71
- TechnologyFLASH - NOR
- Voltage - Supply2.7V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch1mm
- Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PBGA-B64
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size2Gb 256M x 8 128M x 16
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Access Time110ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization128MX16
- Memory Width16
- Memory Density2147483648 bit
- Screening LevelAEC-Q100
- Programming Voltage3V
- Alternate Memory Width8
- Height Seated (Max)1.4mm
- Length13mm
- Width11mm
- RoHS StatusROHS3 Compliant
S70GL02GT11FHA010 Overview
The GL-T series is a type of technology that utilizes FLASH - NOR for its memory format. It operates on a voltage supply range of 2.7V to 3.6V, making it suitable for a variety of applications. However, the maximum reflow temperature for this series is not specified. This information is important for users to know in order to ensure proper handling and operation of the device. The JESD-30 code for this series is R-PBGA-B64, indicating its package type. The memory size for this series is 2Gb, with options for either 256M x 8 or 128M x 16 configurations. It also has an alternate memory width of 8 and a maximum seated height of 1.4mm. The length of this series is 13mm, making it a compact and versatile option for various electronic devices.
S70GL02GT11FHA010 Features
Package / Case: 64-LBGA
S70GL02GT11FHA010 Applications
There are a lot of Cypress Semiconductor Corp S70GL02GT11FHA010 Memory applications.
eDRAM
nonvolatile BIOS memory
workstations,
hard disk drive (HDD)
embedded logic
networking
Camcorders
main computer memory
personal digital assistants
data buffer
The GL-T series is a type of technology that utilizes FLASH - NOR for its memory format. It operates on a voltage supply range of 2.7V to 3.6V, making it suitable for a variety of applications. However, the maximum reflow temperature for this series is not specified. This information is important for users to know in order to ensure proper handling and operation of the device. The JESD-30 code for this series is R-PBGA-B64, indicating its package type. The memory size for this series is 2Gb, with options for either 256M x 8 or 128M x 16 configurations. It also has an alternate memory width of 8 and a maximum seated height of 1.4mm. The length of this series is 13mm, making it a compact and versatile option for various electronic devices.
S70GL02GT11FHA010 Features
Package / Case: 64-LBGA
S70GL02GT11FHA010 Applications
There are a lot of Cypress Semiconductor Corp S70GL02GT11FHA010 Memory applications.
eDRAM
nonvolatile BIOS memory
workstations,
hard disk drive (HDD)
embedded logic
networking
Camcorders
main computer memory
personal digital assistants
data buffer
S70GL02GT11FHA010 More Descriptions
NOR Flash Parallel 3V/3.3V 2G-bit 256M x 8/128M x 16 110ns Automotive 64-Pin Fortified BGA Tray
IC FLASH 2GBIT PARALLEL 64FBGA
Nor/Tray Rohs Compliant: Yes |Infineon S70GL02GT11FHA010
2 GBIT, 3.0V, MIRRORBIT FLASH ME
IC FLASH 2GBIT PARALLEL 64FBGA
Nor/Tray Rohs Compliant: Yes |Infineon S70GL02GT11FHA010
2 GBIT, 3.0V, MIRRORBIT FLASH ME
The three parts on the right have similar specifications to S70GL02GT11FHA010.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityScreening LevelProgramming VoltageAlternate Memory WidthHeight Seated (Max)LengthWidthRoHS StatusTime@Peak Reflow Temperature-Max (s)View Compare
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S70GL02GT11FHA01013 WeeksSurface Mount64-LBGAYES-40°C~85°C TATray2016GL-TActive3 (168 Hours)648542.32.00.71FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B643.6V2.7V2Gb 256M x 8 128M x 16Non-VolatileASYNCHRONOUS110nsFLASHParallel128MX16162147483648 bitAEC-Q1003V81.4mm13mm11mmROHS3 Compliant--
-
13 WeeksSurface Mount64-LBGAYES-40°C~105°C TATape & Reel (TR)-Automotive, AEC-Q100, GL-TActive3 (168 Hours)648542.32.00.51FLASH - NOR1.65V~3.6VBOTTOMNOT SPECIFIED13V1mm-R-PBGA-B643.6V2.7V2Gb 256M x 8 128M x 16Non-VolatileASYNCHRONOUS120nsFLASHParallel128MX16162147483648 bit-3V81.4mm13mm11mmROHS3 CompliantNOT SPECIFIED
-
13 WeeksSurface Mount64-LBGAYES-40°C~105°C TATape & Reel (TR)-GL-TActive3 (168 Hours)648542.32.00.51FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V1mm-R-PBGA-B643.6V2.7V2Gb 256M x 8 128M x 16Non-VolatileASYNCHRONOUS120nsFLASHParallel128MX16162147483648 bitAEC-Q1003V81.4mm13mm11mmROHS3 CompliantNOT SPECIFIED
-
13 WeeksSurface Mount64-LBGAYES-40°C~105°C TATray-Automotive, AEC-Q100, GL-TActive3 (168 Hours)648542.32.00.51FLASH - NOR1.65V~3.6VBOTTOMNOT SPECIFIED13V1mm-R-PBGA-B643.6V2.7V2Gb 256M x 8 128M x 16Non-VolatileASYNCHRONOUS120nsFLASHParallel128MX16162147483648 bit-3V81.4mm13mm11mmROHS3 CompliantNOT SPECIFIED
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